Patents by Inventor David Danzilio

David Danzilio has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • InxGa1-xP etch stop layer for double recess pseudomorphic high electron mobility transistor structures
    Patent number: 6307221
    Abstract: The invention is a Pseudomorphic transistor structure having a semiconductor layer having a 2DEG layer therein, a Schottky layer, a transition layer and an ohmic contact layer on the transition layer, wherein a double recess structure is disposed through the ohmic layer onto the transition layer in which one or two layers of InyGa1−yP are used as etch-stop layers to define the depth of the recess.
    Type: Grant
    Filed: November 18, 1998
    Date of Patent: October 23, 2001
    Assignee: The Whitaker Corporation
    Inventor: David Danzilio
  • Process for fabricating double recess pseudomorphic high electron mobility transistor structures
    Patent number: 6242293
    Abstract: The invention is a method for fabricating a pseudomorphic HEMT transistor structure with a semiconductor layer having a 2DEG layer therein, a Schottky layer, a transition layer, and an ohmic contact layer on the transition layer. A double recess structure is disposed through the ohmic layer into the transition layer in which one or two layers of INYGa1−YAs are used as etch-stop layers to define the depth of the recess(es).
    Type: Grant
    Filed: November 18, 1998
    Date of Patent: June 5, 2001
    Assignee: The Whitaker Corporation
    Inventor: David Danzilio