Abstract: A high power RF IC capable of impeding parasitic current loss and method of manufacturing the same. First a step of semiconductor front-side processing for the high power RF components that includes inductive components is performed. Afterwards, the backside of semiconductor base is polished to a certain thickness, and then lithography and etching processes is employed for forming a backside trench contact window. A backside deposition for oxide insulation layer can be performed so that the oxide insulation layer can be located in the semiconductor base right under the inductive components for impeding the parasitic current loss generated by the inductive components in the semiconductor base due to electromagnetic induction. Therefore, performance of the inductive components operating in high frequency can be improved.