Patents by Inventor David Deen
David Deen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250166861Abstract: A quantum object confinement apparatus is provided comprising one or more electrode sequences and a voltage control circuit for providing analog control signals to at least a first symmetric pair of control electrodes of one of the electrode sequences. The voltage control circuit (i) selectively closes one of a first plurality of switches to complete an electrical connection between the voltage control circuit and a first symmetric control electrode and (ii) simultaneously selectively closes one of a second plurality of switches to complete an electrical connection between the voltage control circuit and a second symmetric control electrode. The voltage control circuit applies a same voltage to an input of the one of the first plurality of switches and to an input of the one of the second plurality of switches prior to selectively closing and as the switches close.Type: ApplicationFiled: September 9, 2024Publication date: May 22, 2025Inventors: Leonardo Ascarrunz, David Deen, Timothy Peterson, Christopher E. Langer, Paul M. Werking
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Publication number: 20250125314Abstract: A confinement apparatus package is provided. The confinement apparatus chip includes a confinement apparatus die having a plurality of electrodes formed thereon, wherein the plurality of electrodes defines a confinement apparatus; an application-specific integrated circuit (ASIC) chip comprising an ASIC die having an ASIC formed thereon; and a package substrate. The ASIC die is disposed between the package substrate and the confinement apparatus die. The ASIC defines a plurality of electrical channels and each electrode of the plurality of electrodes is in electrical communication with a respective electrical channel of the plurality of electrical channels.Type: ApplicationFiled: September 18, 2024Publication date: April 17, 2025Inventors: David DEEN, Matthew SWALLOWS, Leonardo ASCARRUNZ, Benjamin SPAUN
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Publication number: 20250112632Abstract: A quantum object confinement apparatus comprising one or more high-voltage semiconductor switches is provided. Each switch comprises a transmission gate portion, a gate driver portion, a current distribution portion, and a logic enable portion. The transmission gate portion comprises two transistors connected in series source-to-source or drain-to-drain. The gate driver portion detects a voltage at the switch input terminal and the switch output terminal and applies a bias voltage to the gates of the two transistors of the transmission gate portion that is a predetermined amount above a lesser or a greater of the voltage at the switch input terminal or the voltage at the switch output terminal.Type: ApplicationFiled: August 28, 2024Publication date: April 3, 2025Inventors: David Deen, Leonardo Ascarrunz, Paul M. Werking, Garrett Shaffer
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Publication number: 20240079228Abstract: A low loss silicon nitride film is formed by depositing a silicon nitride film on a substrate and annealing the silicon nitride film for at least ten hours at a temperature of at least 400° C. to cause the silicon nitride film to become a low loss silicon nitride film. The low loss silicon nitride film has an optical loss of less than 1 dB per cm at a wavelength of 488 nm.Type: ApplicationFiled: August 28, 2023Publication date: March 7, 2024Inventors: Christopher John Carron, Molly Krogstad, Robert Horning, Robert Higashi, David Deen
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Patent number: 11876092Abstract: An ion trap apparatus (e.g., ion trap chip) having a plurality of electrodes is provided. The ion trap apparatus may comprise a plurality of interconnect layers, a substrate, and at least one integrated switching network layer disposed between the plurality of interconnect layers and the substrate. The integrated switching network layer may comprise a plurality of monolithically-integrated controls and/or switches configured to condition a voltage signal applied to at least one of the plurality of electrodes. An example ion trap apparatus may comprise a surface ion trap chip. The ion trap apparatus may be configured to operate within a cryogenic chamber.Type: GrantFiled: July 1, 2021Date of Patent: January 16, 2024Assignee: Quantinuum LLCInventors: David Deen, Grahame Vittorini, Nathaniel Burdick
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Publication number: 20220037313Abstract: An ion trap apparatus (e.g., ion trap chip) having a plurality of electrodes is provided. The ion trap apparatus may comprise a plurality of interconnect layers, a substrate, and at least one integrated switching network layer disposed between the plurality of interconnect layers and the substrate. The integrated switching network layer may comprise a plurality of monolithically-integrated controls and/or switches configured to condition a voltage signal applied to at least one of the plurality of electrodes. An example ion trap apparatus may comprise a surface ion trap chip. The ion trap apparatus may be configured to operate within a cryogenic chamber.Type: ApplicationFiled: July 1, 2021Publication date: February 3, 2022Inventors: David Deen, Grahame Vittorini, Nathaniel Burdick
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Patent number: 9761279Abstract: Various embodiments of a magnetic stack are disclosed. In one or more embodiments, the magnetic stack includes first and second shield layers, and a magnetically responsive lamination disposed between the first and second shield layers. The magnetically responsive lamination can be configured to receive a sense current IS therethrough. The magnetic stack also includes a cooling element disposed between the first and second shield layers and thermally coupled to the magnetically responsive lamination. The cooling element can be configured to receive a bias current IB therethrough. And the cooling element can be configured to cool the magnetically responsive lamination during a read function.Type: GrantFiled: March 24, 2017Date of Patent: September 12, 2017Assignee: Seagate Technology LLCInventors: David Deen, Eric Singleton, Vasudevan Ramaswamy, Mohammed Patwari, Taras Pokhil, Jae-Young Yi
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Publication number: 20170200479Abstract: Various embodiments of a magnetic stack are disclosed. In one or more embodiments, the magnetic stack includes first and second shield layers, and a magnetically responsive lamination disposed between the first and second shield layers. The magnetically responsive lamination can be configured to receive a sense current IS therethrough. The magnetic stack also includes a cooling element disposed between the first and second shield layers and thermally coupled to the magnetically responsive lamination. The cooling element can be configured to receive a bias current IB therethrough. And the cooling element can be configured to cool the magnetically responsive lamination during a read function.Type: ApplicationFiled: March 24, 2017Publication date: July 13, 2017Inventors: David Deen, Eric Singleton, Vasudevan Ramaswamy, Mohammed Patwari, Taras Pokhil, Jae-Young Li
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Patent number: 9607634Abstract: Various embodiments of a magnetic stack are disclosed. In one or more embodiments, the magnetic stack includes first and second shield layers, and a magnetically responsive lamination disposed between the first and second shield layers. The magnetically responsive lamination can be configured to receive a sense current IS therethrough. The magnetic stack also includes a cooling element disposed between the first and second shield layers and thermally coupled to the magnetically responsive lamination. The cooling element can be configured to receive a bias current IB therethrough. And the cooling element can be configured to cool the magnetically responsive lamination during a read function.Type: GrantFiled: February 17, 2016Date of Patent: March 28, 2017Assignee: Seagate Technology LLCInventors: David Deen, Eric Singleton, Vasudevan Ramaswamy, Mohammed Patwari, Taras Pokhil, Jae-Young Li
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Publication number: 20160163337Abstract: Various embodiments of a magnetic stack are disclosed. In one or more embodiments, the magnetic stack includes first and second shield layers, and a magnetically responsive lamination disposed between the first and second shield layers. The magnetically responsive lamination can be configured to receive a sense current IS therethrough. The magnetic stack also includes a cooling element disposed between the first and second shield layers and thermally coupled to the magnetically responsive lamination. The cooling element can be configured to receive a bias current IB therethrough. And the cooling element can be configured to cool the magnetically responsive lamination during a read function.Type: ApplicationFiled: February 17, 2016Publication date: June 9, 2016Inventors: David Deen, Eric Singleton, Vasudevan Ramaswamy, Mohammed Patwari, Taras Pokhil, Jae-Young Li
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Patent number: 9269379Abstract: Various embodiments of a magnetic stack are disclosed. In one or more embodiments, the magnetic stack includes first and second shield layers, and a magnetically responsive lamination disposed between the first and second shield layers. The magnetically responsive lamination can be configured to receive a sense current IS therethrough. The magnetic stack also includes a cooling element disposed between the first and second shield layers and thermally coupled to the magnetically responsive lamination. The cooling element can be configured to receive a bias current IB therethrough. And the cooling element can be configured to cool the magnetically responsive lamination during a read function.Type: GrantFiled: June 30, 2014Date of Patent: February 23, 2016Assignee: Seagate Technology LLCInventors: David Deen, Eric Singleton, Vasudevan Ramaswamy, Mohammend Patwari, Taras Pokhil, Jae-Young Li
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Publication number: 20150380019Abstract: Various embodiments of a magnetic stack are disclosed. In one or more embodiments, the magnetic stack includes first and second shield layers, and a magnetically responsive lamination disposed between the first and second shield layers. The magnetically responsive lamination can be configured to receive a sense current IS therethrough. The magnetic stack also includes a cooling element disposed between the first and second shield layers and thermally coupled to the magnetically responsive lamination. The cooling element can be configured to receive a bias current IB therethrough. And the cooling element can be configured to cool the magnetically responsive lamination during a read function.Type: ApplicationFiled: June 30, 2014Publication date: December 31, 2015Inventors: David Deen, Eric Singleton, Vasudevan Ramaswamy, Mohammend Patwari, Taras Pokhil, Jae-Young Li