Abstract: An exemplary microelectromechanical device includes a MEMS layer, portions of which respond to an external force in order to measure the external force. A substrate layer is located below the MEMS layer and an anchor couples the substrate layer and MEMS layer to each other. A plurality of temperature sensors are located within the substrate layer to identify a temperature gradient being experienced by the MEMS device. Compensation is performed or operations of the MEMS device are modified based on temperature gradient.

Abstract: An exemplary microelectromechanical device includes a MEMS layer, portions of which respond to an external force in order to measure the external force. A substrate layer is located below the MEMS layer and an anchor couples the substrate layer and MEMS layer to each other. A plurality of temperature sensors are located within the substrate layer to identify a temperature gradient being experienced by the MEMS device. Compensation is performed or operations of the MEMS device are modified based on temperature gradient.

Abstract: An exemplary microelectromechanical device includes a MEMS layer, portions of which respond to an external force in order to measure the external force. A substrate layer is located below the MEMS layer and an anchor couples the substrate layer and MEMS layer to each other. A plurality of temperature sensors are located within the substrate layer to identify a temperature gradient being experienced by the MEMS device. Compensation is performed or operations of the MEMS device are modified based on temperature gradient.

Abstract: An exemplary microelectromechanical device includes a MEMS layer, portions of which respond to an external force in order to measure the external force. A substrate layer is located below the MEMS layer and an anchor couples the substrate layer and MEMS layer to each other. A plurality of temperature sensors are located within the substrate layer to identify a temperature gradient being experienced by the MEMS device. Compensation is performed or operations of the MEMS device are modified based on temperature gradient.

Abstract: An exemplary microelectromechanical device includes a MEMS layer, portions of which respond to an external force in order to measure the external force. A substrate layer is located below the MEMS layer and an anchor couples the substrate layer and MEMS layer to each other. A plurality of temperature sensors are located within the substrate layer to identify a temperature gradient being experienced by the MEMS device. Compensation is performed or operations of the MEMS device are modified based on temperature gradient.

Abstract: Facilitating self-calibration of a sensor device via modification of a sensitivity of the sensor device is presented herein. A sensor system can comprise a sensor component comprising a sensor that generates an output signal based on an external excitation of the sensor; a sensitivity modification component that modifies a sensitivity of the sensor by a defined amount; and a calibration component that measures a first output value of the output signal before a modification of the sensitivity by the defined amount, measures a second output value of the output signal after the modification of the sensitivity by the defined amount, and determines, based on a difference between the first output value and the second output value, an offset portion of the output signal. Further, the calibration component can modify, based on the offset portion, the output signal.

Abstract: A microelectromechanical (MEMS) accelerometer has a proof mass and a fixed electrode. The fixed electrode is located relative to the proof mass such that a capacitance formed by the fixed electrode and the proof mass changes in response to a linear acceleration along a sense axis of the accelerometer. The MEMS accelerometer is exposed to heat sources that produce a z-axis thermal gradient in MEMS accelerometer and an in-plane thermal gradient in the X-Y plane of the MEMS accelerometer. The z-axis thermal gradient is sensed with a plurality of thermistors located relative to anchoring regions of a CMOS layer of the MEMS accelerometer. The configuration of the thermistors within the CMOS layer measures the z-axis thermal gradient while rejecting other lateral thermal gradients. Compensation is performed at the accelerometer based on the z-axis thermal gradient.

Abstract: An exemplary microelectromechanical device includes a MEMS layer, portions of which respond to an external force in order to measure the external force. A substrate layer is located below the MEMS layer and an anchor couples the substrate layer and MEMS layer to each other. A plurality of temperature sensors are located within the substrate layer to identify a temperature gradient being experienced by the MEMS device. Compensation is performed or operations of the MEMS device are modified based on temperature gradient.

Abstract: A microelectromechanical (MEMS) accelerometer has a proof mass and a fixed electrode. The fixed electrode is located relative to the proof mass such that a capacitance formed by the fixed electrode and the proof mass changes in response to a linear acceleration along a sense axis of the accelerometer. The MEMS accelerometer is exposed to heat sources that produce a z-axis thermal gradient in MEMS accelerometer and an in-plane thermal gradient in the X-Y plane of the MEMS accelerometer. The z-axis thermal gradient is sensed with a plurality of thermistors located relative to anchoring regions of a CMOS layer of the MEMS accelerometer. The configuration of the thermistors within the CMOS layer measures the z-axis thermal gradient while rejecting other lateral thermal gradients. Compensation is performed at the accelerometer based on the z-axis thermal gradient.

Abstract: Facilitating self-calibration of a sensor device via modification of a sensitivity of the sensor device is presented herein. A sensor system can comprise a sensor component comprising a sensor that generates an output signal based on an external excitation of the sensor; a sensitivity modification component that modifies a sensitivity of the sensor by a defined amount; and a calibration component that measures a first output value of the output signal before a modification of the sensitivity by the defined amount, measures a second output value of the output signal after the modification of the sensitivity by the defined amount, and determines, based on a difference between the first output value and the second output value, an offset portion of the output signal. Further, the calibration component can modify, based on the offset portion, the output signal.