Patents by Inventor David Douglas Briggs

David Douglas Briggs has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Efficient NPN turn-on in a high voltage DENMOS transistor for ESD protection
    Patent number: 6140683
    Abstract: A high voltage DENMOS transistor (10) having improved ESD protection. The transistor (10) is optimized to provide maximum substrate current in order to turn on the inherent lateral npn transistor during an ESD event so that the lateral npn can dissipate the ESD event without damage to the transistor (10). This is accomplished by optimizing the overlap (A) of the drain extended region (16) and the gate electrode (28) to control the gate coupling to achieve maximum substrate current.
    Type: Grant
    Filed: February 16, 1999
    Date of Patent: October 31, 2000
    Assignee: Texas Instruments Incorporated
    Inventors: Charvaka Duvvury, David Douglas Briggs, Fernando David Carvajal
  • Method of making an efficient NPN turn-on in a high voltage DENMOS transistor for ESD protection
    Patent number: 6071768
    Abstract: A high voltage DENMOS transistor (10) having improved ESD protection. The transistor (10) is optimized to provide maximum substrate current in order to turn on the inherent lateral npn transistor during an ESD event so that the lateral npn can dissipate the ESD event without damage to the transistor (10). This is accomplished by optimizing the overlap (A) of the drain extended region (16) and the gate electrode (28) to control the gate coupling to achieve maximum substrate current.
    Type: Grant
    Filed: May 8, 1997
    Date of Patent: June 6, 2000
    Assignee: Texas Instruments Incorporated
    Inventors: Charvaka Duvvury, David Douglas Briggs, Fernando David Carvajal