Patents by Inventor David E. Grosjean

David E. Grosjean has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6747338
    Abstract: A method of manufacturing MEMS structures and devices that allows the fabrication of dielectric structures with improved etch selectivity and good electrical leakage characteristics. The dielectric structure includes a composite stack of silicon nitride sub-layers with a silicon-rich nitride sub-layer and a stoichiometric silicon nitride sub-layer at opposite ends of the stack. Alternatively, the dielectric structure includes a single silicon nitride layer providing a graded change in silicon content through the dielectric layer, from silicon-rich nitride to stoichiometric silicon nitride.
    Type: Grant
    Filed: November 27, 2002
    Date of Patent: June 8, 2004
    Assignee: Analog Devices, Inc.
    Inventors: Thomas K. Nunan, David E. Grosjean, Denis M. O'Kane, James S. Sellars
  • Publication number: 20040099928
    Abstract: A method of manufacturing MEMS structures and devices that allows the fabrication of dielectric structures with improved etch selectivity and good electrical leakage characteristics. The dielectric structure includes a composite stack of silicon nitride sub-layers with a silicon-rich nitride sub-layer and a stoichiometric silicon nitride sub-layer at opposite ends of the stack. Alternatively, the dielectric structure includes a single silicon nitride layer providing a graded change in silicon content through the dielectric layer, from silicon-rich nitride to stoichiometric silicon nitride.
    Type: Application
    Filed: November 27, 2002
    Publication date: May 27, 2004
    Inventors: Thomas K. Nunan, David E. Grosjean, Denis M. O'Kane, James S. Sellars