Patents by Inventor David E. Moss

David E. Moss has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming semiconductor stalk structure by epitaxial growth in trench
    Patent number: 5034342
    Abstract: A moat having a flat bottom and tapered side walls is formed in a monocrystalline silicon body (substrate) and extends from a top surface of the substrate into the substrate. An oxide layer is grown over side walls and a bottom of the moat and then is selectively removed from the bottom of the moat to expose silicon. An epitaxial stalk (a recessed mesa) is grown on the silicon at the bottom of the moat to a height which makes its top at least coplanar with the top surface of the substrate.
    Type: Grant
    Filed: June 29, 1990
    Date of Patent: July 23, 1991
    Assignee: Delco Electronics Corporation
    Inventors: Diane W. Sidner, Douglas J. Yoder, David E. Moss
  • Method of making a semiconductive structure useful as a pressure sensor
    Patent number: 4993143
    Abstract: A pressure sensor uses a monocrystalline silicon chip that has a diaphragm portion in which strain gages are formed that overlie a buried cavity. The cavity is formed by a single sided semiconductor fabrication process that includes a pair of preferential etching steps and an epitaxial deposition step.
    Type: Grant
    Filed: March 27, 1990
    Date of Patent: February 19, 1991
    Assignee: Delco Electronics Corporation
    Inventors: Diane W. Sidner, Douglas J. Yoder, David E. Moss
  • Semiconductive stalk structure
    Patent number: 4975759
    Abstract: A moat having a flat bottom and tapered side walls is formed in a monocrystalline silicon body (substrate) and extends from a top surface of the substrate into the substrate. An oxide layer is grown over side walls and a bottom of the moat and then is selectively removed from the bottom of the moat to expose silicon. An epitaxial stalk (a recessed mesa) is grown on the silicon at the bottom of the moat to a height which makes its top at least coplanar with the top surface of the substrate.
    Type: Grant
    Filed: March 6, 1989
    Date of Patent: December 4, 1990
    Assignee: Delco Electronics Corporation
    Inventors: Diane W. Sidner, Douglas J. Yoder, David E. Moss
  • Semiconductive structure useful as a pressure sensor
    Patent number: 4945769
    Abstract: A pressure sensor uses a monocrystalline silicon chip that has a diaphragm portion in which strain gages are formed that overlie a buried cavity. The cavity is formed by a single sided semiconductor fabrication process that includes a pair of preferential etching steps and an epitaxial deposition step.
    Type: Grant
    Filed: March 6, 1989
    Date of Patent: August 7, 1990
    Assignee: Delco Electronics Corporation
    Inventors: Diane W. Sidner, Douglas J. Yoder, David E. Moss
  • Method of making strain sensor in fragile web
    Patent number: 4318936
    Abstract: A method of making a strain gauge in a fragile web wherein the improvement resides in making the web after the gauge is substantially completely formed. This reverse sequence is made possible by a unique combination of plasma deposited silicon oxide and plasma deposited silicon nitride on top of the completed device to protect it from attack during silicon substrate etching to form the diaphragm.
    Type: Grant
    Filed: January 23, 1981
    Date of Patent: March 9, 1982
    Assignee: General Motors Corporation
    Inventors: David E. Moss, Karl E. Stone, Charles A. Bright, Jr., Randy A. Rusch