Patents by Inventor David E. Niewolny

David E. Niewolny has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Protected sensor field effect transistors
    Patent number: 9857329
    Abstract: Protected sensor field effect transistors (SFETs). The SFETs include a semiconductor substrate, a field effect transistor, and a sense electrode. The SFETs further include an analyte-receiving region that is supported by the semiconductor substrate, is in contact with the sense electrode, and is configured to receive an analyte fluid. The analyte-receiving region is at least partially enclosed. In some embodiments, the analyte-receiving region can be an enclosed analyte channel that extends between an analyte inlet and an analyte outlet. In these embodiments, the enclosed analyte channel extends such that the analyte inlet and the analyte outlet are spaced apart from the sense electrode. In some embodiments, the SFETs include a cover structure that at least partially encloses the analyte-receiving region and is formed from a cover material that is soluble within the analyte fluid. The methods include methods of manufacturing the SFETs.
    Type: Grant
    Filed: August 30, 2016
    Date of Patent: January 2, 2018
    Assignee: NXP USA, Inc.
    Inventors: Patrice M. Parris, Weize Chen, Richard J. de Souza, Jose Fernandez Villasenor, Md M. Hoque, David E. Niewolny, Raymond M. Roop
  • PROTECTED SENSOR FIELD EFFECT TRANSISTORS
    Publication number: 20160370314
    Abstract: Protected sensor field effect transistors (SFETs). The SFETs include a semiconductor substrate, a field effect transistor, and a sense electrode. The SFETs further include an analyte-receiving region that is supported by the semiconductor substrate, is in contact with the sense electrode, and is configured to receive an analyte fluid. The analyte-receiving region is at least partially enclosed. In some embodiments, the analyte-receiving region can be an enclosed analyte channel that extends between an analyte inlet and an analyte outlet. In these embodiments, the enclosed analyte channel extends such that the analyte inlet and the analyte outlet are spaced apart from the sense electrode. In some embodiments, the SFETs include a cover structure that at least partially encloses the analyte-receiving region and is formed from a cover material that is soluble within the analyte fluid. The methods include methods of manufacturing the SFETs.
    Type: Application
    Filed: August 30, 2016
    Publication date: December 22, 2016
    Applicant: Freescale Semiconductor, Inc.
    Inventors: Patrice M. Parris, Weize Chen, Richard J. de Souza, Jose Fernandez Villasenor, Md M. Hoque, David E. Niewolny, Raymond M. Roop
  • PROTECTED SENSOR FIELD EFFECT TRANSISTORS
    Publication number: 20160356740
    Abstract: Protected sensor field effect transistors (SFETs). The SFETs include a semiconductor substrate, a field effect transistor, and a sense electrode. The SFETs further include an analyte-receiving region that is supported by the semiconductor substrate, is in contact with the sense electrode, and is configured to receive an analyte fluid. The analyte-receiving region is at least partially enclosed. In some embodiments, the analyte-receiving region can be an enclosed analyte channel that extends between an analyte inlet and an analyte outlet. In these embodiments, the enclosed analyte channel extends such that the analyte inlet and the analyte outlet are spaced apart from the sense electrode. In some embodiments, the SFETs include a cover structure that at least partially encloses the analyte-receiving region and is formed from a cover material that is soluble within the analyte fluid. The methods include methods of manufacturing the SFETs.
    Type: Application
    Filed: June 5, 2015
    Publication date: December 8, 2016
    Applicant: Freescale Semiconductor, Inc.
    Inventors: Patrice M. Parris, Weize Chen, Richard J. de Souza, Jose Fernandez Villasenor, Md M. Hoque, David E. Niewolny, Raymond M. Roop
  • Protected sensor field effect transistors
    Patent number: 9494550
    Abstract: Protected sensor field effect transistors (SFETs). The SFETs include a semiconductor substrate, a field effect transistor, and a sense electrode. The SFETs further include an analyte-receiving region that is supported by the semiconductor substrate, is in contact with the sense electrode, and is configured to receive an analyte fluid. The analyte-receiving region is at least partially enclosed. In some embodiments, the analyte-receiving region can be an enclosed analyte channel that extends between an analyte inlet and an analyte outlet. In these embodiments, the enclosed analyte channel extends such that the analyte inlet and the analyte outlet are spaced apart from the sense electrode. In some embodiments, the SFETs include a cover structure that at least partially encloses the analyte-receiving region and is formed from a cover material that is soluble within the analyte fluid. The methods include methods of manufacturing the SFETs.
    Type: Grant
    Filed: June 5, 2015
    Date of Patent: November 15, 2016
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Patrice M. Parris, Weize Chen, Richard J. de Souza, Jose Fernandez Villasenor, Md M. Hoque, David E. Niewolny, Raymond M. Roop