Abstract: Apparatus and methods are provided for integrating microchannel cooling modules within high-density electronic modules (e.g., chip packages, system-on-a-package modules, etc.,) comprising multiple high-performance IC chips. Electronic modules are designed such that high-performance (high power) IC chips are disposed in close proximity to the integrated cooling module (or cooling plate) for effective heat extraction. Moreover, electronic modules which comprise large surface area silicon carriers with multiple chips face mounted thereon are designed such that integrated silicon cooling modules are rigidly bonded to the back surfaces of such chips to increase the structural integrity of the silicon carriers.

Abstract: Apparatus and methods are provided for integrating microchannel cooling modules within high-density electronic modules (e.g., chip packages, system-on-a-package modules, etc.,) comprising multiple high-performance IC chips. Electronic modules are designed such that high-performance (high power) IC chips are disposed in close proximity to the integrated cooling module (or cooling plate) for effective heat extraction. Moreover, electronic modules which comprise large surface area silicon carriers with multiple chips face mounted thereon are designed such that integrated silicon cooling modules are rigidly bonded to the back surfaces of such chips to increase the structural integrity of the silicon carriers.

Abstract: Apparatus and methods are provided for integrating microchannel cooling modules within high-density electronic modules (e.g., chip packages, system-on-a-package modules, etc.,) comprising multiple high-performance IC chips. Electronic modules are designed such that high-performance (high power) IC chips are disposed in close proximity to the integrated cooling module (or cooling plate) for effective heat extraction. Moreover, electronic modules which comprise large surface area silicon carriers with multiple chips face mounted thereon are designed such that integrated silicon cooling modules are rigidly bonded to the back surfaces of such chips to increase the structural integrity of the silicon carriers.

Abstract: Apparatus and methods are provided for integrating microchannel cooling modules within high-density electronic modules (e.g., chip packages, system-on-a-package modules, etc.,) comprising multiple high-performance IC chips. Electronic modules are designed such that high-performance (high power) IC chips are disposed in close proximity to the integrated cooling module (or cooling plate) for effective heat extraction. Moreover, electronic modules which comprise large surface area silicon carriers with multiple chips face mounted thereon are designed such that integrated silicon cooling modules are rigidly bonded to the back surfaces of such chips to increase the structural integrity of the silicon carriers.

Abstract: The present invention is an admixture of an electrically conductive material and an energy sensitive material resulting in a conductive energy sensitive composition. The structures are useful for lithography in microelectronic fabrication to avoid the effects of charging on resists from electron beams. The compositions are also useful in applications of scanning electron metrology and static dissipation.

Abstract: A high-performance radiation sensitive silicon-containing negative-tone resist is provided along with a method of using the silicon-containing resist in multilayer, including bilayer, imaging for manufacturing semiconductor devices. The negative-tone silicon-containing resist is based on an acid catalyzed high-contrast crosslinking of aqueous base soluble silicon-containing phenolic polymers through reaction of a carbocation of the crosslinking agent with the hydroxyl site of the phenolic group in the silicon-containing polymers. A chemically amplified silicon-containing negative-tone resist composition comprising said silicon-containing polymer resin; at least one crosslinking agent; one acid generator; and a solvent is provided. The silicon-containing resist composition has high silicon content and provide excellent resolution and a means of patterning high aspect ratio resist patterns.

Abstract: A high-performance radiation sensitive silicon-containing negative-tone resist is provided along with a method of using the silicon-containing resist in multilayer, including bilayer, imaging for manufacturing semiconductor devices. The negative-tone silicon-containing resist is based on an acid catalyzed high-contrast crosslinking of aqueous base soluble silicon-containing phenolic polymers through reaction of a carbocation of the crosslinking agent with the hydroxyl site of the phenolic group in the silicon-containing polymers. A chemically amplified silicon-containing negative-tone resist composition comprising said silicon-containing polymer resin; at least one crosslinking agent; one acid generator; and a solvent is provided. The silicon-containing resist composition has high silicon content and provide excellent resolution and a means of patterning high aspect ratio resist patterns.

Abstract: The present invention is an admixture of an electrically conductive material and an energy sensitive material resulting in a conductive energy sensitive composition. The structures are useful for lithography in microelectronic fabrication to avoid the effects of charging on resists from electron beams. The compositions are also useful in applications of scanning electron metrology and static dissipation.

Abstract: The sensitivity of a photoresist to actinic light is improved by the addition of certain dyes. The photoresist includes a polymer matrix, a photosensitive acid generator and at least one compound selected from the group consisting of dyes containing at least one heterosulphur atom such as 2,2.sup.1,5.sup.1,2"-terthiophene and its derivatives; thianthrene and its derivatives, and 4,6-diphenylthieno(3,4-d)-1,3-dioxol-2-one-5,5-dioxide; phenylsulfone and its derivatives; and 4,5-diphenyl-1,3-dioxol-2-one; 3,4-bis(acetoxymethyl)furan; chelidonic acid and its derivatives; and 5,7,12,14-pentacenetetrone. Resist images on a substrate are formed from the compositions.

Abstract: The present invention relates to an improved method of depositing a diamond-like carbon film onto a substrate by low temperature plasma-enhanced chemical vapor deposition (PECVD) from a hydrocarbon/helium plasma. More specifically, the diamond-like carbon films of the present invention are deposited onto the substrate by employing acetylene which is heavily diluted with helium as the plasma gas. The films formed using the process of the present invention are characterized as being amorphous and having dielectric strengths comparable to those normally observed for diamond films. More importantly, however is that the films produced herein are thermally stable, optically transparent, absorbent in the ultraviolet range and hard thus making them extremely desirable for a wide variety of applications.

Abstract: Quinone diazo compounds having bonded to the diazo ring or directly bonded to a ring of the compound, certain non-metallic atoms that improve the photosensitivity thereof are provided. These quinone diazo compounds are useful as photoactive compounds in photoresist compositions, and particularly positive photoresist composition employed in x-ray or electron beam radiation. Also provided is a method for preparing compounds of the present invention.

Abstract: Quinone diazo compounds having bonded to the diazo ring or directly bonded to a ring of the compound, certain non-metallic atoms that improve the photosensitivity thereof are provided. These quinone diazo compounds are useful as photoactive compounds in photoresist compositions, and particularly positive photoresist composition employed in x-ray or electron beam radiation. Also provided is a method for preparing compounds of the present invention.

Abstract: The present invention relates to an improved method of depositing a diamond-like carbon film onto a substrate by low temperature plasma-enhanced chemical vapor deposition (PECVD) from a hydrocarbon/helium plasma. More specifically, the diamond like carbon films of the present invention are deposited onto the substrate by employing acetylene which is heavily diluted with helium as the plasma gas. The films formed using the process of the present invention are characterized as being amorphous and having dielectric strengths comparable to those normally observed for diamond films. More importantly, however is that the films produced herein are thermally stable, optically transparent, absorbent in the ultraviolet range and hard thus making them extremely desirable for a wide variety of applications.

Abstract: Disclosed is a novel composition of matter comprising a polyacid and a polymer containing repeating units which contain one or more basic atoms. The complex is water-soluble and electrically conductive. The complex is useful in providing organic discharge layers for use in electronic applications and fabrications.

Abstract: The present invention provides a method for determining the development endpoint in a X-ray lithographic process. Endpoint is determined by visually observing resist test field patterns through a microscope during the developing step. During the developing, changing test field patterns are formed because test field locations each had been exposed simultaneously to different radiation doses. These different doses are produced when radiation passes through a mask containing a plurality of different size radiation attenuators. When the changing test field pattern matches a known pattern, which is correlated to the desired development endpoint, the workpiece is removed from the developing step.

Abstract: A technique for making a high resolution X-ray mask with high aspect ratio absorber patterns sufficient for use in X-ray lithography wherein a thin resist layer is used to provide a low contrast mask, and then an X-ray exposure is used to increase the aspect ratio of the absorber to increase the contrast of the mask. The mask is first patterned with an e-beam resist exposure and development step, and the plating of the base material is activated by a reactive ion etch followed by electroplating. The resist is removed and the mask is coated with a negative acting X-ray resist. The back of the mask is exposed to X-rays wherein the existing absorber acts as an X-ray mask to expose the desired areas of the resist. The resist is removed after development, reactive ion etching and electroplating resulting in a mask with high contrast.

Abstract: A system for removing excess material from a semiconductor wafer employs an excimer laser for ablative photocomposition. A wafer is positioned on an X-Y stage that is computer controlled to position the wafer at points where the laser may be focused to remove excess material whether over alignment marks or identified contamination. The laser passes through a vacuum chamber which by generating an inward laminar flow constrains any particulate contamination resulting from the ablative photodecomposition from spreading. This material is removed by the vacuum system.