Abstract: A scattered light detector comprises a first photodiode array comprising one or more photodiodes arranged in a planar, semicircular pattern on a substrate, each of the one or more photodiodes having an outer edge and an inner edge; and a notch perpendicular to the substrate and located adjacent the inner edge of each of the one or more diodes, and equidistant from the outer edges of each of the one or more photodiodes, the notch configured to accept an optical fiber oriented perpendicular to the plane of the one or more photodiodes. When there are two or more photodiodes, the photodiodes may be divided into two or more segments extending outwardly from the notch. Each of the photodiodes shares a common electrical ground. The planes of the one or more photodiodes of the first and second photodiode arrays are oriented parallel to each other and spaced a predetermined distance apart.

Abstract: A solid state laser device made from a nonlinear optic quaternary alloy of Silver, Gallium, Selenium and Tellurium semiconductor material or Silver, Gallium, Sulfur and Tellurium semiconductor material. The Tellurium component in each alloy provides quaternary alloying anion modification of an underlying ternary semiconductor crystal and achieves tuning of the birefringence and tuning of the wavelength passband of the semiconductor material. The tuned quaternary alloy enables beam walkoff-free noncritical phase match operation of the laser device including use of a phase match angle supporting optimum use of the material's nonlinear properties, maximized useful length of the material crystal, room temperature wavelength changing operation, significantly increased second order nonlinear susceptibility, a factor of ten reduction in the walk-off angle and photon energy conversion efficiencies several times those usually achieved.

Abstract: A solid state laser device made from a nonlinear optic quaternary alloy of Silver, Gallium, Selenium and Tellurium semiconductor material or Silver, Gallium, Sulfur and Tellurium semiconductor material. The Tellurium component in each alloy provides quaternary alloying anion modification of an underlying ternary semiconductor crystal and achieves tuning of the birefringence and tuning of the wavelength passband of the semiconductor material. The tuned quaternary alloy enables beam walkoff-free noncritical phase match operation of the laser device including use of a phase match angle supporting optimum use of the material's nonlinear properties, maximized useful length of the material crystal, room temperature wavelength changing operation, significantly increased second order nonlinear susceptibility, a factor of ten reduction in the walk-off angle and photon energy conversion efficiencies several times those usually achieved.