Patents by Inventor David Eger

David Eger has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Optical waveguide fabrication
    Patent number: 8844322
    Abstract: An optical device including an active core layer of silica glass doped with ions which serve as optical emitters, the active core layer being on a silica glass substrate and having a layer thickness of at least 5 ?m, and wherein the layer is sintered at a temperature range of 1500-1600 C. and subsequently heat treated by a laser.
    Type: Grant
    Filed: April 26, 2011
    Date of Patent: September 30, 2014
    Assignee: Soreq Nuclear Research Center
    Inventors: Gil Atar, Ariel Bruner, David Eger, Bruno Sfez
  • OPTICAL WAVEGUIDE FABRICATION
    Publication number: 20130209047
    Abstract: An optical device including an active core layer of silica glass doped with ions which serve as optical emitters, the active core layer being on a silica glass substrate and having a layer thickness of at least 5 ?m, and wherein the layer is sintered at a temperature range of 1500-1600 C and subsequently heat treated by a laser.
    Type: Application
    Filed: April 26, 2011
    Publication date: August 15, 2013
    Inventors: Gil Atar, Ariel Bruner, David Eger, Bruno Sfez
  • Fabrication of an invertedly poled domain structure from a ferroelectric crystal
    Patent number: 6597492
    Abstract: A method of fabricating an invertedly poled domain structure having alternating sections of opposite electric polarities, from a ferroelectric crystal wafer (1) having two opposite polar surfaces, comprises patterning at least one of the two polar surfaces of the wafer to comprise a plurality of alternating discrete regions, of which first regions are adapted for and second regions are protected from the direct application thereto of an electric contact; applying to both polar surfaces of the wafer electrically conducting electrodes (10 and 11) so that the first regions are in direct contact with the electrodes and the second regions are protected from such a contact; and applying to the electrodes an electrical field (20) of the intensity E. The electrical field is applied to the wafer at a working temperature by heater/cooler (15).
    Type: Grant
    Filed: April 28, 2000
    Date of Patent: July 22, 2003
    Assignees: The State of Israel Atomic Energy Commission Soreq Nuclear Research Center, Ramot University Authority for Applied Research & Industrial Development Ltd.
    Inventors: Gil Rosenman, Alexander Skliar, Moshe Oron, David Eger, Mordechai Katz
  • Zinc diffusion in the presence of cadmium into indium phosphide
    Patent number: 4889830
    Abstract: Zinc is diffused into indium phosphide in the presence of cadmium to prevent degradation of the indium phosphide surface.
    Type: Grant
    Filed: September 9, 1988
    Date of Patent: December 26, 1989
    Assignee: Northern Telecom Limited
    Inventors: Anthony J. Springthorpe, Agnes Margittai, David Eger