Abstract: The first integrated circuit/transducer device 36 of the handheld probe includes CMOS circuits 110 and cMUT elements 112. The cMUT elements 112 function to generate an ultrasonic beam, detect an ultrasonic echo, and output electrical signals, while the CMOS circuits 110 function to perform analog or digital operations on the electrical signals generated through operation of the cMUT elements 112. The manufacturing method for the first integrated circuit/transducer device 36 of the preferred embodiment includes the steps of depositing the lower electrode S102; depositing a sacrificial layer S104; depositing a dielectric layer S106; removing the sacrificial layer S108, followed by the steps of depositing the upper electrode S110 and depositing a protective layer on the upper electrode S112.

Abstract: An ultrasound system and a method of manufacturing an ultrasound system comprising a base comprising a bore; a prismatic segment, coupled to the base, that defines a set of surfaces surrounding the bore; a set of ultrasound transducer panels configured to emit ultrasound signals in a radial direction, each ultrasound transducer panel in the set of ultrasound transducer panels coupled to at least one surface of the set of surfaces, and an interconnect coupling a first ultrasound transducer panel in the set of ultrasound transducer panels to a second ultrasound transducer panel in the set of ultrasound transducer panels, wherein the interconnect facilitates coupling of the first ultrasound transducer panel and the second ultrasound transducer panel to the prismatic segment.

Abstract: The integrated circuit/transducer device of the preferred embodiment includes a substrate, a complementary-metal-oxide-semiconductor (CMOS) circuit that is fabricated on the substrate, and a capacitive micromachined ultrasonic transducer (cMUT) element that is also fabricated on the substrate. The CMOS circuit and cMUT element are fabricated during the same foundry process and are connected. The cMUT includes a lower electrode, an upper electrode, a membrane structure that support the upper electrode, and a cavity between the upper electrode and lower electrode.

Abstract: A system and method for biasing a capacitive ultrasonic transducer (CMUT) device with a circuit that includes a CMUT that includes a first plate and a second plate that form a membrane structure; a circuit voltage source at a complementary metal-oxide-semiconductor (CMOS) compatible voltage; a bias voltage source that applies a bias voltage greater than a CMOS compatible voltage and is applied to the first plate; and readout electronics with an input connected on the second plate side of the circuit.

Abstract: The first integrated circuit/transducer device 36 of the handheld probe includes CMOS circuits 110 and cMUT elements 112. The cMUT elements 112 function to generate an ultrasonic beam, detect an ultrasonic echo, and output electrical signals, while the CMOS circuits 110 function to perform analog or digital operations on the electrical signals generated through operation of the cMUT elements 112. The manufacturing method for the first integrated circuit/transducer device 36 of the preferred embodiment includes the steps of depositing the lower electrode S102; depositing a sacrificial layer S104; depositing a dielectric layer S106; depositing the upper electrode S108; depositing a protective layer on the upper electrode S110; and removing the sacrificial layer S112. In the preferred embodiment, the manufacturing method also includes the step of depositing a sealant layer to seal a cavity between the lower electrode and the upper electrode S114.

Abstract: The integrated circuit/transducer device of the preferred embodiment includes a substrate, a complementary-metal-oxide-semiconductor (CMOS) circuit that is fabricated on the substrate, and a capacitive micromachined ultrasonic transducer (cMUT) element that is also fabricated on the substrate. The CMOS circuit and cMUT element are fabricated during the same foundry process and are connected. The cMUT includes a lower electrode, an upper electrode, a membrane structure that support the upper electrode, and a cavity between the upper electrode and lower electrode.

Abstract: The integrated circuit/transducer device of the preferred embodiment includes a substrate, a complementary-metal-oxide-semiconductor (CMOS) circuit that is fabricated on the substrate, and a capacitive micromachined ultrasonic transducer (cMUT) element that is also fabricated on the substrate. The CMOS circuit and cMUT element are fabricated during the same foundry process and are connected. The cMUT includes a lower electrode, an upper electrode, a membrane structure that support the upper electrode, and a cavity between the upper electrode and lower electrode.

Abstract: A system and method for biasing a capacitive ultrasonic transducer (CMUT) device with a circuit that includes a CMUT that includes a first plate and a second plate that form a membrane structure; a circuit voltage source at a complementary metal-oxide-semiconductor (CMOS) compatible voltage; a bias voltage source that applies a bias voltage greater than a CMOS compatible voltage and is applied to the first plate; and readout electronics with an input connected on the second plate side of the circuit.

Abstract: The integrated circuit/transducer device of the preferred embodiment includes a substrate, a complementary-metal-oxide-semiconductor (CMOS) circuit that is fabricated on the substrate, and a capacitive micromachined ultrasonic transducer (cMUT) element that is also fabricated on the substrate. The CMOS circuit and cMUT element are fabricated during the same foundry process and are connected. The cMUT includes a lower electrode, an upper electrode, a membrane structure that support the upper electrode, and a cavity between the upper electrode and lower electrode.

Abstract: A method and system for locally connecting microstructures and devices formed thereby are provided wherein localized solder-bonding creates bonds between pairs of microstructures found on miniature flexible cables and silicon microsystem platforms. Multi-lead contact to the pads are detected automatically, triggering an embedded heater or heaters to initiate solder melting. This approach enables delicate microstructures to be connected and disconnected from microsystem platforms in the field, and is implemented with a process that is compatible with monolithic integration of circuits.

Abstract: A method and system for locally connecting microstructures and devices formed thereby are provided wherein localized solder-bonding creates bonds between pairs of microstructures found on miniature flexible cables and silicon microsystem platforms. Multi-lead contact to the pads are detected automatically, triggering an embedded heater or heaters to initiate solder melting. This approach enables delicate microstructures to be connected and disconnected from microsystem platforms in the field, and is implemented with a process that is compatible with monolithic integration of circuits.

Abstract: The invention uses hydrogen ambient atmosphere to directly form PdGe contacts on Group III-V materials. Specific GaAs HBT's have been formed in a 100% H.sub.2 ambient, and demonstrate low etch reactivity attributable to the significant incorporation of hydrogen. The LP-MOCVD method used to demonstrate the invention produced a specific contact resistivity of less than 1.times.10.sup.-7 .OMEGA.-cm-.sup.-2, at preferred conditions of a 100% hydrogen ambient, 300.degree. C., and 15 minute reaction time. This is believed to be the lowest known resistance of any alloy method employed for PdGe on GaAs. Equally significant, the contacts demonstrate increased durability during etching.