Patents by Inventor David F. Lovelace

David F. Lovelace has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Fabrication of injection lasers utilizing a porous host diffusion layer
    Patent number: 4264381
    Abstract: Porous silica doped with zinc is used as a p-type dopant source in the construction of rib lasers. Other modifications include allowing the zinc diffusion to go right through the active layer and to dimension the device so that lateral optical guidance is unaffected by the rib.
    Type: Grant
    Filed: September 28, 1979
    Date of Patent: April 28, 1981
    Assignee: ITT Industries, Inc.
    Inventors: George H. B. Thompson, David F. Lovelace
  • Fabrication of injection lasers utilizing epitaxial growth and selective diffusion
    Patent number: 4213808
    Abstract: Porous silica doped with zinc is used as a p-type dopant source in the construction of rib lasers. This is preferable to the method used in the parent case of growing a zinc doped layer because epitaxial growth is liable to be accompanied by zinc diffusion into regions where it is not required. Other modifications include allowing the zinc diffusion to go right through the active layer and to dimension the device so that lateral optical guidance is unaffected by the rib.
    Type: Grant
    Filed: March 30, 1978
    Date of Patent: July 22, 1980
    Assignee: ITT Industries, Incorporated
    Inventors: George H. B. Thompson, David F. Lovelace
  • Injection lasers
    Patent number: 4203079
    Abstract: Porous silica doped with zinc is used as a p-type dopant source in the construction of rib lasers. Other modifications include allowing the zinc diffusion to go right through the active layer and to dimension the device so that lateral optical guidance is unaffected by the rib.
    Type: Grant
    Filed: March 13, 1978
    Date of Patent: May 13, 1980
    Assignee: ITT Industries, Inc.
    Inventors: George H. B. Thompson, David F. Lovelace
  • Injection lasers
    Patent number: 4163952
    Abstract: A double heterostructure injection laser has its active layer close to the surface. A rib protruding from that surface provides lateral optical confinement of laser radiation propagating in the active layer under the rib.
    Type: Grant
    Filed: February 21, 1978
    Date of Patent: August 7, 1979
    Assignee: International Standard Electric Corporation
    Inventors: George H. B. Thompson, David F. Lovelace
  • Semiconductor etching
    Patent number: 4142953
    Abstract: KOH can be used as the electrolyte for self-limiting etching of GaAs to preferentially remove p-type material from n-type material but does not work with GaAlAs because etching is halted by the precipitation of aluminium hydroxide. An aqueous solution of triethanolamine has been found to be an alternative electrolyte which does not suffer from this problem. Preferably no external drive voltage is used but instead the current flow is promoted by the e.m.f. developed by the etching cell itself.
    Type: Grant
    Filed: March 30, 1978
    Date of Patent: March 6, 1979
    Assignee: ITT Industries, Inc.
    Inventor: David F. Lovelace
  • Method of making injection lasers by epitaxial deposition and selective etching
    Patent number: 4011113
    Abstract: A double heterostructure injection laser has its active layer close to the surface. A rib protruding from that surface provides lateral optical confinement of laser radiation propagating in the active layer under the rib.
    Type: Grant
    Filed: January 2, 1976
    Date of Patent: March 8, 1977
    Assignee: International Standard Electric Corporation
    Inventors: George H. B. Thompson, David F. Lovelace