Patents by Inventor David F. Storm

David F. Storm has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for reducing the concentration of oxygen, carbon, and silicon impurities on nitrogen-polar surfaces of gallium nitride
    Patent number: 8669168
    Abstract: A method of preparing GaN material includes subjecting a GaN substrate to at least two cycles of Ga deposition and desorption, then applying a layer of AlN to the GaN substrate, then growing GaN on the AlN layer by molecular beam epitaxy. This results in reduced concentrations of oxygen, carbon, and silicon impurities.
    Type: Grant
    Filed: January 9, 2013
    Date of Patent: March 11, 2014
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: David F. Storm, Douglas S. Katzer, Glenn G. Jernigan, Steven C. Binari