Patents by Inventor David F. Witman
David F. Witman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 5534094Abstract: A method and apparatus for releasing a workpiece from a substrate including providing a substrate which is transparent to a predetermined wavelength of electromagnetic radiation; forming, on the substrate, a separation layer which degrades in response to the predetermined radiation; providing the workpiece on the separation layer; and directing the predetermined radiation at the separation layer through the transparent substrate so as to degrade the separation layer and to separate the workpiece from the substrate.Type: GrantFiled: September 29, 1994Date of Patent: July 9, 1996Assignee: IBM CorporationInventors: Gnanalingam Arjavalingam, Alina Deutsch, Fuad E. Doany, Bruce K. Furman, Donald J. Hunt, Chandrasekhar Narayan, Modest M. Oprysko, Sampath Purushothaman, Vincent Ranieri, Stephen Renick, Jane M. Shaw, Janusz S. Wilczynski, David F. Witman
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Patent number: 5286599Abstract: A composition containing novolak polymer, and/or poly(p-vinylphenol), an organometallic material, an amino polymer a cationic photocatalyst. The composition can also include a cosensitizer material which makes a composition sensitive to near U.V. radiation.Type: GrantFiled: September 26, 1991Date of Patent: February 15, 1994Assignee: International Business Machines CorporationInventors: Edward D. Babich, Eileen A. Galligan, Jeffrey D. Gelorme, Richard P. McGouey, Sharon L. Nunes, Jurij R. Paraszczak, Russell J. Serino, David F. Witman
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Patent number: 5258236Abstract: A method and apparatus for releasing a workpiece from a substrate including providing a substrate which is transparent to a predetermined wavelength of electromagnetic radiation; forming, on the substrate, a separation layer which degrades in response to the predetermined radiation; providing the workpiece on the separation layer; and directing the predetermined radiation at the separation layer through the transparent substrate so as to degrade the separation layer and to separate the workpiece from the substrate.Type: GrantFiled: May 3, 1991Date of Patent: November 2, 1993Assignee: IBM CorporationInventors: Gnanalingam Arjavalingam, Alina Deutsch, Fuad E. Doany, Bruce K. Furman, Donald J. Hunt, Chandrasekhar Narayan, Modest M. Oprysko, Sampath Purushothaman, Vincent Ranieri, Stephen Renick, Jane M. Shaw, Janusz S. Wilczynski, David F. Witman
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Patent number: 5238773Abstract: A composition containing an organosilicon material having terminal quinone groups, and a phenolic-novolak polymer, and use thereof in photolithography.Type: GrantFiled: June 8, 1992Date of Patent: August 24, 1993Assignee: International Business Machines CorporationInventors: Edward D. Babich, Donis G. Flagello, Michael Hatzakis, Jurij R. Paraszczak, Jane M. Shaw, David F. Witman
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Patent number: 5115095Abstract: An ultraviolet light sensitive photoinitiator composition that includes at least one anthracene derivative represented by the formula: ##STR1## wherein X is CH.dbd.CH.sub.2 or --(--CH.sub.2 --)--.sub.n O--(--R) with R being H or ##STR2## wherein each R.sup.I, R.sup.II and R.sup.III individually is selected from the group of alkyl, alkenyl, aryl, ##STR3## wherein each R.sup.IV, R.sup.V and R.sup.VI individually is selected from the group of alkyl, alkenyl and aryl; wherein m is an integer of 0 to 4, p is an integer of 0 to 4; and is n being 1 to 2; and onium salt; and an organic solvent. The composition is used for cationic polymerization of cationic polymerizable materials including in the formation of a pattern of a photoresist. Also certain novel epoxy-functionalized organosilicons are provided that are sensitive to radiation including E-beam radiation and exhibit resistance to oxygen reactive ion etching.Type: GrantFiled: April 11, 1991Date of Patent: May 19, 1992Assignee: International Business Machines CorporationInventors: Edward D. Babich, Jeffrey D. Gelorme, Michael Hatzakis, Jane M. Shaw, Kevin J. Stewart, David F. Witman
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Patent number: 5110711Abstract: An ultraviolet light sensitive photoinitiator composition that includes at least one anthracene derivative represented by the formula: ##STR1## wherein X is CH.dbd.CH.sub.2 or --(--CH.sub.2 --)--.sub.n O--(--R) with R being H or ##STR2## wherein each R.sup.I, R.sup.II and R.sup.III individually is selected from the group of alkyl, alkenyl, aryl, ##STR3## wherein each R.sup.IV, R.sup.V and R.sup.VI individually is selected from the group of alkyl, alkenyl and aryl; wherein m is an integer of 0 to 4, p is an integer of 0 to 4; and is n being 1 to 2; and onium salt; and an organic solvent. The composition is used for cationic polymerization of cationic polymerizable materials including in the formation of a pattern of a photoresist. Also certain novel epoxy-functionalized organosilicons are provided that are sensitive to radiation including E-beam radiation and exhibit resistance to oxygen reactive ion etching.Type: GrantFiled: April 11, 1991Date of Patent: May 5, 1992Assignee: International Business Machines CorporationInventors: Edward D. Babich, Jeffrey D. Gelorme, Michael Hatzakis, Jane M. Shaw, Kevin J. Stewart, David F. Witman
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Patent number: 5098816Abstract: An ultraviolet light sensitive photoinitiator composition that includes at least one anthracene derivative represented by the formula: ##STR1## wherein X is CH.dbd.CH.sub.2 or --(--CH.sub.2 --)--.sub.n O--(--R) with R being H or ##STR2## wherein each R.sup.I, R.sup.II and R.sup.III individually is selected from the group of alkyl, alkenyl, aryl, ##STR3## wherein each R.sup.IV, R.sup.V and R.sup.VI individually is selected from the group of alkyl, alkenyl and aryl; wherein m is an integer of 0 to 4, p is an integer of 0 to 4; and is n being 1 to 2; and onium salt; and an organic solvent. The composition is used for cationic polymerization of cationic polymerizable materials including in the formation of a pattern of a photoresist. Also certain novel epoxy-functionalized organosilicons are provided that are sensitive to radiation including E-beam radiation and exhibit resistance to oxygen reactive ion etching.Type: GrantFiled: April 11, 1991Date of Patent: March 24, 1992Assignee: International Business Machines CorporationInventors: Edward D. Babich, Jeffrey D. Gelorme, Michael Hatzakis, Jane M. Shaw, Kevin J. Stewart, David F. Witman
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Patent number: 5059512Abstract: An ultraviolet light sensitive photoinitiator composition that includes at least one anthracene derivative represented by the formula: ##STR1## wherein X is CH.dbd.CH.sub.2 or --(--CH.sub.2 --)--.sub.n O--(--R) with R being H or ##STR2## wherein each R.sup.I, R.sup.II and R.sup.III individually is selected from the group of alkyl, alkenyl, aryl, ##STR3## wherein each R.sup.IV, R.sup.V and R.sup.VI individually is selected from the group of alkyl, alkenyl and aryl; wherein m is an integer of 0 to 4, p is an integer of 0 to 4; and is n being 1 to 2; and onium salt; and an organic solvent. The composition is used for cationic polymerization of cationic polymerizable materials including in the formation of a pattern of a photoresist. Also certain novel epoxy-functionalized organosilicons are provided that are sensitive to radiation including E-beam radiation and exhibit resistance to oxygen reactive ion etching.Type: GrantFiled: October 10, 1989Date of Patent: October 22, 1991Assignee: International Business Machines CorporationInventors: Edward D. Babich, Jeffrey D. Gelorme, Michael Hatzakis, Jane M. Shaw, Kevin J. Stewart, David F. Witman
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Patent number: 4981909Abstract: Plasma-resistant polymeric materials are prepared by reacting a polymeric material containing reactive hydrogen functional groups with a multifunctional organometallic material containing at least two functional groups which are reactive with the reactive hydrogen functional groups of the polymeric material, such as hexamethylcyclotrisilazane.Type: GrantFiled: September 7, 1988Date of Patent: January 1, 1991Assignee: International Business Machines CorporationInventors: Edward D. Babich, Michael Hatzakis, Scott L. Jacobs, Juri R. Parasczcak, Jane M. Shaw, David F. Witman
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Patent number: 4840923Abstract: A system of establishing a conductive via path between spaced interlevel conductors. Successive layers of metallization separated by a dielectric are built. The vias are opened in one step to eliminate interlevel mashing. The system employs annular pads at locations where contact may be established to another wiring level. The vias are self-aligned and taper from top metal to first level contact. The system is applicable both chip-wise and carrier-wise.Type: GrantFiled: October 19, 1988Date of Patent: June 20, 1989Assignee: International Business Machine CorporationInventors: Donis G. Flagello, Janusz S. Wilczynski, David F. Witman
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Patent number: 4782008Abstract: Plasma-resistant polymeric materials are prepared by reacting a polymeric material containing reactive hydrogen functional groups with a multifunctional organometallic material containing at least two functional groups which are reactive with the reactive hydrogen functional groups of the polymeric material, such as hexamethylcyclotrisilazane.Type: GrantFiled: March 19, 1985Date of Patent: November 1, 1988Assignee: International Business Machines CorporationInventors: Edward D. Babich, Michael Hatzakis, Scott L. Jacobs, Juri R. Parasczcak, Jane M. Shaw, David F. Witman
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Patent number: 4770947Abstract: A multi-layer structure that includes a transparent dielectric substrate, a layer of a nickel-containing steel alloy, and a layer of copper and/or chrome.Type: GrantFiled: January 2, 1987Date of Patent: September 13, 1988Assignee: International Business Machines CorporationInventors: Donis G. Flagello, Jane M. Shaw, David F. Witman
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Patent number: 4744615Abstract: A coherent laser beam having a possibly non-uniform spatial intensity distribution is transformed into an incoherent light beam having a substantially uniform spatial intensity distribution by homogenizing the laser beam with a light tunnel (a transparent light passageway having flat internally reflective side surfaces). It has been determined that when the cross-section of the tunnel is a polygon (as preferred) and the sides of the tunnel are all parallel to the axis of the tunnel (as preferred), the laser light at the exit of the light tunnel (or alternatively at any image plane with respect thereto) will have a substantially uniform intensity distribution and will be incoherent only when the aspect ratio of the tunnel (length divided by width) equals or exceeds the contangent of the input beam divergence angle .theta. and whenW.sub.min =L.sub.coh (R+(1+R.sup.2).sup.1/2)>2RL.sub.coh,where W.sub.min is the minimum required width for the light tunnel, L.sub.Type: GrantFiled: January 29, 1986Date of Patent: May 17, 1988Assignee: International Business Machines CorporationInventors: Bunsen Fan, Raymond E. Tibbetts, Janusz S. Wilczynski, David F. Witman