Abstract: A method for moisture testing of a fully assembled photovoltaic (PV) module. An assembled PV module is probed with short wave IR probe energy in the range of 1700-2000 nm. Energy reflected from the assembled PV module is collected and directed to a sensor. Noise is removed from a signal of the sensor with reference to the probe energy. Absorption is of the probe energy is determined. The absorption is correlated to moisture in the PV module. A preferred system that carries out the method provides a signal-to-noise ratio (as defined by standard deviation/mean of measured reflectance) of at least 3800.

Abstract: A method for moisture testing of a fully assembled photovoltaic (PV) module. An assembled PV module is probed with short wave IR probe energy in the range of 1700-2000 nm. Energy reflected from the assembled PV module is collected and directed to a sensor. Noise is removed from a signal of the sensor with reference to the probe energy. Absorption is of the probe energy is determined. The absorption is correlated to moisture in the PV module. A preferred system that carries out the method provides a signal-to-noise ratio (as defined by standard deviation/mean of measured reflectance) of at least 3800.

Abstract: A method for forming a doped silicon layer or a silicon alloy includes providing a silicon substrate having a silicon surface. An eutectic-former layer with dopant is formed on the silicon surface. Heating is conducted past a system eutectic temperature of the eutectic-former layer and silicon to form a liquid eutectic melt that incorporates some of the silicon near-surface into the liquid eutectic melt. Cooling to supersaturate the liquid eutectic melt with silicon and recrystallize silicon doped with the dopant. A silicon solar cell includes an emitter layer within a silicon substrate. A p-n junction is defined by a junction of the emitter layer with the remaining silicon substrate. The emitter has a doping profile with a doping concentration at the p-n junction that is equal or greater than the doping concentration at a surface of the emitter layer.