Patents by Inventor David Follman

David Follman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220187515
    Abstract: A method for manufacturing hybrid optical coatings and hybrid mirror assemblies, including: a) providing a first optical coating having layers of alternating high and low refractive indices of crystalline materials on a first host substrate via an epitaxial growth technique; b) providing a second optical coating having layers of alternating high and low refractive indices of dielectric materials on a second host substrate via a physical vapor deposition (PVD) technique; c) directly bonding the first optical coating to the second optical coating; and d) removing the first host substrate.
    Type: Application
    Filed: March 1, 2022
    Publication date: June 16, 2022
    Inventors: Garrett Cole, Valentin Wittwer, Lukas W. Perner, Georg Winkler, Aline Mayer, Oliver Heckl, David Follman
  • Publication number: 20190123097
    Abstract: A method for manufacturing a capacitor structure for quantum integrated circuits, in particular superconducting quantum integrated circuits, comprising: providing a first wafer structure comprising a first substrate; providing a second wafer structure comprising a second substrate; a heterostructure on the second substrate, the heterostructure comprising a buried etch stop layer, a dielectric layer on the etch stop layer, and a second metal film deposited on the etch stop layer of the heterostructure; bonding the first wafer structure and the second wafer structure together using the second metal film as bonding medium, thereby forming a bonded layer stack sandwiched between the first and the second substrate, the bonded layer stack comprising the buried etch stop layer, the dielectric layer and the second metal film; stripping the second substrate from the second wafer structure, stopping on the buried etch stop layer; selectively removing the buried etch stop layer from the bonded layer stack, thereby expos
    Type: Application
    Filed: October 25, 2018
    Publication date: April 25, 2019
    Inventors: Garrett Cole, Christoph Deutsch, David Follman, Paula Heu