Patents by Inventor David Forrai
David Forrai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10886325Abstract: Focal plane arrays and infrared detector device having a transparent common ground structure and methods of their fabrication are disclosed. In one embodiment, a front-side illuminated infrared detector device includes a contact layer and a detector structure adjacent to the contact layer. The detector structure is capable of absorbing radiation. The front-side illuminated infrared detector device further includes a common ground structure adjacent the detector structure, wherein the common ground structure is transmissive to radiation having a wavelength in a predetermined spectral band, and the common ground structure has a bandgap that is wider than a bandgap of the detector structure. The front-side illuminated infrared detector device further includes an optical layer adjacent the common ground structure.Type: GrantFiled: May 4, 2018Date of Patent: January 5, 2021Assignee: L3 CINCINNATI ELECTRONICS CORPORATIONInventors: Yajun Wei, Steven Allen, Michael Garter, Mark Greiner, David Forrai, Darrel Endres, Robert Jones
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Patent number: 10714531Abstract: Focal plane arrays and infrared detector device having a transparent common ground structure and methods of their fabrication are disclosed. In one embodiment, a front-side illuminated infrared detector device includes a contact layer and a detector structure adjacent to the contact layer. The detector structure is capable of absorbing radiation. The front-side illuminated infrared detector device further includes a common ground structure adjacent the detector structure, wherein the common ground structure is transmissive to radiation having a wavelength in a predetermined spectral band, and the common ground structure has a bandgap that is wider than a bandgap of the detector structure. The front-side illuminated infrared detector device further includes an optical layer adjacent the common ground structure.Type: GrantFiled: May 4, 2018Date of Patent: July 14, 2020Assignee: L3 Cincinnati Electronics CorporationInventors: Yajun Wei, Steven Allen, Michael Garter, Mark Greiner, David Forrai, Darrel Endres
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Publication number: 20180294309Abstract: Focal plane arrays and infrared detector device having a transparent common ground structure and methods of their fabrication are disclosed. In one embodiment, a front-side illuminated infrared detector device includes a contact layer and a detector structure adjacent to the contact layer. The detector structure is capable of absorbing radiation. The front-side illuminated infrared detector device further includes a common ground structure adjacent the detector structure, wherein the common ground structure is transmissive to radiation having a wavelength is a predetermined spectral band, and the common ground structure has a bandgap that is wider than a bandgap of the detector structure. The front-side illuminated infrared detector device further includes an optical layer adjacent the common ground structure.Type: ApplicationFiled: May 4, 2018Publication date: October 11, 2018Applicant: L3 Cincinnati Electronics CorporationInventors: Yajun Wei, Steven Allen, Michael Garter, Mark Greiner, David Forrai, Darrel Endres
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Publication number: 20180294301Abstract: Focal plane arrays and infrared detector device having a transparent common ground structure and methods of their fabrication are disclosed. In one embodiment, a front-side illuminated infrared detector device includes a contact layer and a detector structure adjacent to the contact layer. The detector structure is capable of absorbing radiation. The front-side illuminated infrared detector device further includes a common ground structure adjacent the detector structure, wherein the common ground structure is transmissive to radiation having a wavelength is a predetermined spectral band, and the common ground structure has a bandgap that is wider than a bandgap of the detector structure. The front-side illuminated infrared detector device further includes an optical layer adjacent the common ground structure.Type: ApplicationFiled: May 4, 2018Publication date: October 11, 2018Applicant: L3 Cincinnati Electronics CorporationInventors: Yajun Wei, Steven Allen, Michael Garter, Mark Greiner, David Forrai, Darrel Endres, Robert Jones
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Patent number: 8846432Abstract: Frontside-illuminated barrier infrared photodetector devices and methods of fabrication are disclosed. In one embodiment, a frontside-illuminated barrier infrared photodetector includes a transparent carrier substrate, and a plurality of pixels. Each pixel of the plurality of pixels includes an absorber layer, a barrier layer on the absorber layer, a collector layer on the barrier layer, and a backside electrical contact coupled to the absorber layer. Each pixel has a frontside and a backside. The absorber layer and the barrier layer are non-continuous across the plurality of pixels, and the barrier layer of each pixel is closer to a scene than the absorber layer of each pixel. A plurality of frontside common electrical contacts is coupled to the frontside of the plurality of pixels, wherein the frontside of the plurality of pixels and the plurality of frontside common electrical contacts are bonded to the transparent carrier substrate.Type: GrantFiled: September 13, 2012Date of Patent: September 30, 2014Assignee: L-3 Communications Cincinnati Electronics CorporationInventors: Robert A. Jones, David Forrai, Richard L. Rawe, Jr.
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Patent number: 8450720Abstract: A method of fabricating a frontside-illuminated inverted quantum well infrared photodetector may include providing a quantum well wafer having a bulk substrate layer and a quantum material layer, wherein the quantum material layer includes a plurality of alternating quantum well layers and barrier layers epitaxially grown on the bulk substrate layer. The method further includes applying at least one frontside common electrical contact to a frontside of the quantum well wafer, bonding a transparent substrate to the frontside of the quantum well wafer, thinning the bulk substrate layer of the quantum well wafer, and etching the quantum material layer to form quantum well facets that define at least one pyramidal quantum well stack. A backside electrical contact may be applied to the pyramidal quantum well stack. In one embodiment, a plurality of quantum well stacks is bonded to a read-out integrated circuit of a focal plane array.Type: GrantFiled: September 6, 2012Date of Patent: May 28, 2013Assignee: L-3 Communications Cincinnati Electronics CorporationInventors: David Forrai, Darrel Endres, Robert Jones, Michael James Garter
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Publication number: 20130062593Abstract: Frontside-illuminated barrier infrared photodetector devices and methods of fabrication are disclosed. In one embodiment, a frontside-illuminated barrier infrared photodetector includes a transparent carrier substrate, and a plurality of pixels. Each pixel of the plurality of pixels includes an absorber layer, a barrier layer on the absorber layer, a collector layer on the barrier layer, and a backside electrical contact coupled to the absorber layer. Each pixel has a frontside and a backside. The absorber layer and the barrier layer are non-continuous across the plurality of pixels, and the barrier layer of each pixel is closer to a scene than the absorber layer of each pixel. A plurality of frontside common electrical contacts is coupled to the frontside of the plurality of pixels, wherein the frontside of the plurality of pixels and the plurality of frontside common electrical contacts are bonded to the transparent carrier substrate.Type: ApplicationFiled: September 13, 2012Publication date: March 14, 2013Applicant: L-3 Communications Cincinnati Electronics CorporationInventors: Robert A. Jones, David Forrai, Richard L. Rawe, JR.
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Publication number: 20120326124Abstract: A method of fabricating a frontside-illuminated inverted quantum well infrared photodetector may include providing a quantum well wafer having a bulk substrate layer and a quantum material layer, wherein the quantum material layer includes a plurality of alternating quantum well layers and barrier layers epitaxially grown on the bulk substrate layer. The method further includes applying at least one frontside common electrical contact to a frontside of the quantum well wafer, bonding a transparent substrate to the frontside of the quantum well wafer, thinning the bulk substrate layer of the quantum well wafer, and etching the quantum material layer to form quantum well facets that define at least one pyramidal quantum well stack. A backside electrical contact may be applied to the pyramidal quantum well stack. In one embodiment, a plurality of quantum well stacks is bonded to a read-out integrated circuit of a focal plane array.Type: ApplicationFiled: September 6, 2012Publication date: December 27, 2012Applicant: L-3 Communications Cincinnati Electronics CorporationInventors: David Forrai, Darrel Endres, Robert Jones, Michael James Garter
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Patent number: 8338200Abstract: A method of fabricating a frontside-illuminated inverted quantum well infrared photodetector may include providing a quantum well wafer having a bulk substrate layer and a quantum material layer, wherein the quantum material layer includes a plurality of alternating quantum well layers and barrier layers epitaxially grown on the bulk substrate layer. The method further includes applying at least one frontside common electrical contact to a frontside of the quantum well wafer, bonding a transparent substrate to the frontside of the quantum well wafer, thinning the bulk substrate layer of the quantum well wafer, and etching the quantum material layer to form quantum well facets that define at least one pyramidal quantum well stack. A backside electrical contact may be applied to the pyramidal quantum well stack. In one embodiment, a plurality of quantum well stacks is bonded to a read-out integrated circuit of a focal plane array.Type: GrantFiled: February 2, 2011Date of Patent: December 25, 2012Assignee: L-3 Communications Cincinnati Electronics CorporationInventors: David Forrai, Darrel Endres, Robert Jones, Michael James Garter
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Publication number: 20120193608Abstract: A method of fabricating a frontside-illuminated inverted quantum well infrared photodetector may include providing a quantum well wafer having a bulk substrate layer and a quantum material layer, wherein the quantum material layer includes a plurality of alternating quantum well layers and barrier layers epitaxially grown on the bulk substrate layer. The method further includes applying at least one frontside common electrical contact to a frontside of the quantum well wafer, bonding a transparent substrate to the frontside of the quantum well wafer, thinning the bulk substrate layer of the quantum well wafer, and etching the quantum material layer to form quantum well facets that define at least one pyramidal quantum well stack. A backside electrical contact may be applied to the pyramidal quantum well stack. In one embodiment, a plurality of quantum well stacks is bonded to a read-out integrated circuit of a focal plane array.Type: ApplicationFiled: February 2, 2011Publication date: August 2, 2012Applicant: L-3 Communications Cincinnati Electronics CorporationInventors: David Forrai, Darrel Endres, Robert Jones, Michael James Garter