Patents by Inventor David Frans Simon DECKERS
David Frans Simon DECKERS has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240152059Abstract: A method for determining a substrate model for describing a first measurement dataset and a second measurement dataset relating to a performance parameter. The method include obtaining candidate basis functions for a plurality of substrate models. Steps 1 to 4 are performed iteratively for the first measurement dataset and the second measurement dataset until at least one stopping criterion is met so as to determine the substrate model, the steps including: 1. selecting a candidate basis function from the candidate basis functions; 2. updating a substrate model by adding the candidate basis function into this substrate model to obtain an updated substrate model; 3. evaluating the updated substrate model based on the first measurement dataset and/or second measurement dataset; and 4. determining whether to include the basis function within the substrate model based on the evaluation.Type: ApplicationFiled: March 9, 2022Publication date: May 9, 2024Applicant: ASML NETHERLANDS B.V.Inventors: Dogacan KARA, Erik JENSEN, Jochem Sebastiaan WILDENBERG, David Frans Simon DECKERS, Sila GULER, Reinaldo Antonio ASTUDILLO RENGIFO, Yasri YUDHISTIRA, Gijs HILHORST, David Ricardo CAICEDO FERNANDEZ, Frans Reinier SPIERING, Sinatra Canggih KHO, Herman Martin BLOM, Sang Uk KIM, Hyun-Su KIM
-
Publication number: 20230333485Abstract: A substrate including a target structure formed in at least two layers. The target structure includes a first region having periodically repeating features in each of the layers measureable using optical metrology; and a second region having repetitions of one or more product features in each of the layers, the repetitions being sufficient for stochastic analysis to determine at least one local variation metric. The method also includes determining a correction for control of a lithographic process based on measurement of such a target structure.Type: ApplicationFiled: September 27, 2021Publication date: October 19, 2023Applicant: ASML NETHERLANDS B.V.Inventors: Wim Tjibbo TEL, Hermanus Adrianus DILLEN, Roy WERKMAN, David Frans Simon DECKERS
-
Patent number: 11782349Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.Type: GrantFiled: January 24, 2023Date of Patent: October 10, 2023Assignee: ASML NETHERLANDS B.V.Inventors: Weitian Kou, Alexander Ypma, Marc Hauptmann, Michiel Kupers, Lydia Marianna Vergaij-Huizer, Erik Johannes Maria Wallerbos, Erik Henri Adriaan Delvigne, Willem Seine Christian Roelofs, Hakki Ergün Cekli, Stefan Cornelis Theodorus Van Der Sanden, Cédric Désiré Grouwstra, David Frans Simon Deckers, Manuel Giollo, Iryna Dovbush
-
Patent number: 11754931Abstract: A method for determining a correction for an apparatus used in a process of patterning substrates, the method including: obtaining a group structure associated with a processing history and/or similarity in fingerprint of to be processed substrates; obtaining metrology data associated with a plurality of groups within the group structure, wherein the metrology data is correlated between the groups; and determining the correction for a group out of the plurality of groups by applying a model to the metrology data, the model including at least a group-specific correction component and a common correction component.Type: GrantFiled: March 18, 2020Date of Patent: September 12, 2023Assignee: ASML NETHERLANDS B.V.Inventors: Roy Werkman, David Frans Simon Deckers, Simon Philip Spencer Hastings, Jeffrey Thomas Ziebarth, Samee Ur Rehman, Davit Harutyunyan, Chenxi Lin, Yana Cheng
-
Publication number: 20230168591Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.Type: ApplicationFiled: January 24, 2023Publication date: June 1, 2023Applicant: ASML NETHERLANDS B.V.Inventors: Weitian KOU, Alexander YPMA, Marc Hauptmann, Michiel Kupers, Lydia Marianna Vergaij-Huizer, Erick Johannes Maria Wallerbos, Erick Henri Adriaan Delvigne, Willem Seine Christian Roelofs, Hakki Ergün Cekli, Stefan Cornelis Theodorus Van Der Sanden, Cédric Désiré Grouwstra, David Frans Simon Deckers, Manuel Giollo, Iryna Dovbush
-
Patent number: 11592753Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.Type: GrantFiled: April 7, 2022Date of Patent: February 28, 2023Assignee: ASML Netherlands B.V.Inventors: Weitian Kou, Alexander Ypma, Marc Hauptmann, Michiel Kupers, Lydia Marianna Vergaij-Huizer, Erik Johannes Maria Wallerbos, Erik Henri Adriaan Delvigne, Willem Seine Christian Roelofs, Hakki Ergün Cekli, Stefan Cornelis Theodorus Van Der Sanden, Cédric Désiré Grouwstra, David Frans Simon Deckers, Manuel Giollo, Iryna Dovbush
-
Publication number: 20220252988Abstract: A method for determining a correction for an apparatus used in a process of patterning substrates, the method including: obtaining a group structure associated with a processing history and/or similarity in fingerprint of to be processed substrates; obtaining metrology data associated with a plurality of groups within the group structure, wherein the metrology data is correlated between the groups; and determining the correction for a group out of the plurality of groups by applying a model to the metrology data, the model including at least a group-specific correction component and a common correction component.Type: ApplicationFiled: March 18, 2020Publication date: August 11, 2022Applicant: ASML NETHERLANDS B.V.Inventors: Roy WERKMAN, David Frans Simon DECKERS, Simon Philip Spencer HASTINGS, Jeffrey Thomas ZIEBARTH, Samee Ur REHMAN, Davit HARUTYUNYAN, Chenxi LIN, Yana CHENG
-
Publication number: 20220229373Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.Type: ApplicationFiled: April 7, 2022Publication date: July 21, 2022Applicant: ASML NETHERLANDS B.V.Inventors: Weitian KOU, Alexander YPMA, Marc HAUPTMANN, Michiel KUPERS, Lydia Marianna VERGAIJ-HUIZER, Erik Johannes Maria WALLERBOS, Erik Henri Adriaan DELVIGNE, Willem Seine Christian ROELOFS, Hakki Ergün CEKLI, Stefan Cornelis Theodorus VAN DER SANDEN, Cédric Désiré GROUWSTRA, David Frans Simon DECKERS, Manuel GIOLLO, Iryna DOVBUSH
-
Patent number: 11327407Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.Type: GrantFiled: November 24, 2020Date of Patent: May 10, 2022Assignee: ASML Netherlands B.V.Inventors: Weitian Kou, Alexander Ypma, Marc Hauptmann, Michiel Kupers, Lydia Marianna Vergaij-Huizer, Erik Johannes Maria Wallerbos, Erik Henri Adriaan Delvigne, Willem Seine Christian Roelofs, Hakki Ergün Cekli, Stefan Cornelis Theodorus Van Der Sanden, Cédric Désiré Grouwstra, David Frans Simon Deckers, Manuel Giollo, Iryna Dovbush
-
Publication number: 20220091514Abstract: A method of determining a control parameter for a lithographic process is disclosed, the method includes: defining a substrate model for representing a process parameter fingerprint across a substrate, the substrate model being defined as a combination of basis functions including at least one basis function suitable for representing variation of the process parameter fingerprint between substrates and/or batches of substrates; receiving measurements of the process parameter across at least one substrate; calculating substrate model parameters using the measurements and the basis functions; and determining the control parameter based on the substrate model parameters and the similarity of the at least one basis function to a process parameter fingerprint variation between substrates and/or batches of substrates.Type: ApplicationFiled: December 18, 2019Publication date: March 24, 2022Applicant: ASML NETHERLANDS B.V.Inventors: Roy WERKMAN, David Frans Simon DECKERS, Bijoy RAJASEKHARAN, Ignacio Salvador VAZQUEZ RODARTE, Sarathi ROY
-
Patent number: 11054813Abstract: In a lithographic process in which a series of substrates are processed in different contexts, object data (such as performance data representing overlay measured on a set of substrates that have been processed previously) is received. Context data represents one or more parameters of the lithographic process that vary between substrates within the set. By principal component analysis or other statistical analysis of the performance data, the set of substrates are partitioned into two or more subsets. The first partitioning of the substrates and the context data are used to identify one or more relevant context parameters, being parameters of the lithographic process that are observed to correlate most strongly with the first partitioning. The lithographic apparatus is controlled for new substrates by reference to the identified relevant context parameters. Embodiments with feedback control and feedforward control are described.Type: GrantFiled: September 21, 2016Date of Patent: July 6, 2021Assignee: ASML Netherlands B.V.Inventors: Alexander Ypma, David Frans Simon Deckers, Franciscus Godefridus Casper Bijnen, Richard Johannes Franciscus Van Haren, Weitian Kou
-
Patent number: 10996573Abstract: A method including: obtaining error information indicative of accuracy of positioning a pattern formed on a layer on a substrate relative to a target position, wherein the pattern has been formed by irradiating the layer with a radiation beam patterned by a patterning device; and producing modification information including a map of positional shifts across the patterning device so as to increase the accuracy of positioning the pattern formed using the patterning device modified according to the modification information, the modification information based on the error information, wherein the error information is independent of any other layer on the substrate.Type: GrantFiled: December 13, 2017Date of Patent: May 4, 2021Assignee: ASML Netherlands B.V.Inventors: Peter Ten Berge, David Frans Simon Deckers, Peter Hanzen Wardenier
-
Publication number: 20210080836Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.Type: ApplicationFiled: November 24, 2020Publication date: March 18, 2021Applicant: ASML NETHERLANDS B.V.Inventors: Weitian KOU, Alexander YPMA, Marc HAUPTMANN, Michiel KUPERS, Lydia Marianna VERGAIJ-HUIZER, Erik Johannes Maria WALLERBOS, Erik Henri Adriaan DELVIGNE, Willem Seine Christian ROELOFS, Hakki Ergün CEKLI, Stefan Cornelis Theodorus VAN DER SANDEN, Cédric Désiré GROUWSTRA, David Frans Simon DECKERS, Manuel GIOLLO, Iryna DOVBUSH
-
Patent number: 10915689Abstract: A method including obtaining a measurement and/or simulation result of a pattern after being processed by an etch tool of a patterning system, determining a patterning error due to an etch loading effect based on the measurement and/or simulation result, and creating, by a computer system, modification information for modifying a patterning device and/or for adjusting a modification apparatus upstream in the patterning system from the etch tool based on the patterning error, wherein the patterning error is converted to a correctable error and/or reduced to a certain range, when the patterning device is modified according to the modification information and/or the modification apparatus is adjusted according to the modification information.Type: GrantFiled: September 28, 2016Date of Patent: February 9, 2021Assignee: ASML Netherlands B.V.Inventors: Peter Ten Berge, Everhardus Cornelis Mos, Richard Johannes Franciscus Van Haren, Peter Hanzen Wardenier, Erik Jensen, Bernardo Kastrup, Michael Kubis, Johannes Catharinus Hubertus Mulkens, David Frans Simon Deckers, Wolfgang Helmut Henke, Joungchel Lee
-
Patent number: 10877381Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.Type: GrantFiled: September 28, 2017Date of Patent: December 29, 2020Assignee: ASML Netherlands B.V.Inventors: Weitian Kou, Alexander Ypma, Marc Hauptmann, Michiel Kupers, Lydia Marianna Vergaij-Huizer, Erik Johannes Maria Wallerbos, Erik Henri Adriaan Delvigne, Willem Seine Christian Roelofs, Hakki Ergün Cekli, Stefan Cornelis Theodorus Van Der Sanden, Cédric Désiré Grouwstra, David Frans Simon Deckers, Manuel Giollo, Iryna Dovbush
-
Publication number: 20200124989Abstract: A method including: obtaining error information indicative of accuracy of positioning a pattern formed on a layer on a substrate relative to a target position, wherein the pattern has been formed by irradiating the layer with a radiation beam patterned by a patterning device; and producing modification information including a map of positional shifts across the patterning device so as to increase the accuracy of positioning the pattern formed using the patterning device modified according to the modification information, the modification information based on the error information, wherein the error information is independent of any other layer on the substrate.Type: ApplicationFiled: December 13, 2017Publication date: April 23, 2020Applicant: ASML NETHERLANDS B.V.Inventors: Peter TEN BERGE, David Frans Simon DECKERS, Peter Hanzen WARDENIER
-
Publication number: 20200019067Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.Type: ApplicationFiled: September 28, 2017Publication date: January 16, 2020Applicant: ASML NETHERLANDS B.V.Inventors: Weitian KOU, Alexander YPMA, Marc HAUPTMANN, Michiel KUPERS, Lydia Marianna VERGAIJ-HUIZER, Erik Johannes Maria WALLERBOS, Erik Henri Adriaan DELVIGNE, Willem Seine Christian ROELOFS, Hakki Ergün CEKLI, Stefan Cornelis Theodorus VAN DER SANDEN, Cedric Desire GROUWSTRA, David Frans Simon DECKERS, Manuel GIOLLO, Iryna DOVBUSH
-
Patent number: 10191390Abstract: A method including: providing a reference substrate with a first mark pattern; providing the reference substrate with a first resist layer on the reference substrate, wherein the first resist layer has a minimal radiation dose needed for development of the first resist; using a reference patterning device to impart a radiation beam with a second mark pattern in its cross-section to form a patterned radiation beam; and exposing a target portion of the first resist layer of the reference substrate n times to said patterned radiation beam to create exposed areas in the target portion of the first resist layer in accordance with the second mark pattern that have been subjected to an accumulated radiation dose above the minimal radiation dose of the first resist layer, wherein n is an integer with a value of at least two.Type: GrantFiled: June 27, 2016Date of Patent: January 29, 2019Assignee: ASML Netherlands B.V.Inventors: Paul Cornelis Hubertus Aben, Sanjaysingh Lalbahadoersing, Jurgen Johannes Henderikus Maria Schoonus, David Frans Simon Deckers
-
Publication number: 20180307216Abstract: In a lithographic process in which a series of substrates are processed in different contexts, object data (such as performance data representing overlay measured on a set of substrates that have been processed previously) is received. Context data represents one or more parameters of the lithographic process that vary between substrates within the set. By principal component analysis or other statistical analysis of the performance data, the set of substrates are partitioned into two or more subsets. The first partitioning of the substrates and the context data are used to identify one or more relevant context parameters, being parameters of the lithographic process that are observed to correlate most strongly with the first partitioning. The lithographic apparatus is controlled for new substrates by reference to the identified relevant context parameters. Embodiments with feedback control and feedforward control are described.Type: ApplicationFiled: September 21, 2016Publication date: October 25, 2018Inventors: Alexander YPMA, David Frans Simon DECKERS