Abstract: The present disclosure generally relates to systems and methods for the combustive abatement of waste gas formed during the manufacture of semiconductor wafers. In particular, the systems described herein are capable of combusting air-polluting perfluorocarbons, including those having high greenhouse gas indexes such as hexafluoroethane (C2F6) and tetrafluoromethane (CF4), as well as particulate-forming silicon dioxide precursors, such as silane (SiH4) and tetraethoxysilane (Si(OC2H5)4, abbreviated TEOS), with greater efficiency and lower energy usage than prior abatement systems.

Abstract: The present disclosure generally relates to systems and methods for the combustive abatement of waste gas formed during the manufacture of semiconductor wafers. In particular, the systems described herein are capable of combusting air-polluting perfluorocarbons, including those having high greenhouse gas indexes such as hexafluoroethane (C2F6) and tetrafluoromethane (CF4), as well as particulate-forming silicon dioxide precursors, such as silane (SiH4) and tetraethoxysilane (Si(OC2H5)4, abbreviated TEOS), with greater efficiency and lower energy usage than prior abatement systems.

Abstract: The present disclosure generally relates to systems and methods for the combustive abatement of waste gas formed during the manufacture of semiconductor wafers. In particular, the systems described herein are capable of combusting air-polluting perfluorocarbons, including those having high greenhouse gas indexes such as hexafluoroethane (C2F6) and tetrafluoromethane (CF4), as well as particulate-forming silicon dioxide precursors, such as silane (SiH4) and tetraethoxysilane (Si(OC2H5)4, abbreviated TEOS), with greater efficiency and lower energy usage than prior abatement systems.