Patents by Inventor David G. Mehuys
David G. Mehuys has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7167490Abstract: An optical fiber laser has an output that is stabilized to adapt to changes in laser operating temperature. At the output of the laser a plurality of wavelength-selective stabilizing reflectors is provided, each having a reflectivity profile with a different center wavelength. The reflectors, typically Bragg gratings, have a relative degree of reflectivity and relative wavelength separation that results in the output power of the laser being at one or more of the reflector center wavelengths throughout the temperature change. Thus, as a temperature shift causes the wavelength of the optical energy generated in the laser gain medium to change, the grating-stabilized output of the laser shifts between one locked wavelength and another. However, the output remains stable over the extended wavelength range provided by the multiple reflectors. Such a laser is particularly useful in an amplifier system in which the laser is used as an optical pump source.Type: GrantFiled: March 8, 2004Date of Patent: January 23, 2007Assignee: JDS Uniphase CorporationInventors: David G. Mehuys, Richard R. Craig, Jay A. Skidmore, Vincent V. Wong
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Publication number: 20040207913Abstract: An optical fiber laser has an output that is stabilized to adapt to changes in laser operating temperature. At the output of the laser a plurality of wavelength-selective stabilizing reflectors is provided, each having a reflectivity profile with a different center wavelength. The reflectors, typically Bragg gratings, have a relative degree of reflectivity and relative wavelength separation that results in the output power of the laser being at one or more of the reflector center wavelengths throughout the temperature change. Thus, as a temperature shift causes the wavelength of the optical energy generated in the laser gain medium to change, the grating-stabilized output of the laser shifts between one locked wavelength and another. However, the output remains stable over the extended wavelength range provided by the multiple reflectors. Such a laser is particularly useful in an amplifier system in which the laser is used as an optical pump source.Type: ApplicationFiled: March 8, 2004Publication date: October 21, 2004Applicant: JDS UNIPHASE CORPORATIONInventors: David G. Mehuys, Richard R. Craig, Jay A. Skidmore, Vincent V. Wong
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Patent number: 6603896Abstract: The gain of a fiber amplifier is typically not uniform across the bandwidth used for amplifying optical communications signals. In a power fiber amplifier unit, having a fiber pre-amplifier and a fiber power amplifier, the gain tilt of the fiber power amplifier is generally set by the level of gain saturation. The gain tilt of the fiber pre-amplifier is adjustable by controlling the population inversion density in the amplifying medium. The gain tilt of the fiber pre-amplifier may be adjusted so as to at least partially compensate for the gain tilt of the power amplifier.Type: GrantFiled: September 29, 2000Date of Patent: August 5, 2003Assignee: JDS Uniphase CorporationInventors: Stuart MacCormack, David M. Giltner, David G. Mehuys
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Patent number: 6553043Abstract: The negative effects of kinking in the L-I characteristics of laser diode operation with respect to feedback control for laser diode current control is suppressed by either (1) combining the output of a plurality of laser diodes together or (2) by imparting a current modulation superimposed on the direct driving current of the laser diode in conjunction with a limited feedback bandwidth, or a combination of both approaches (1) and (2).Type: GrantFiled: March 1, 1999Date of Patent: April 22, 2003Assignee: JDS Uniphase CorporationInventors: Michael L. Bortz, David G. Mehuys, Bernard G. Fidric, John deAndrea
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Patent number: 6388806Abstract: A multistage optical fiber amplifier (OFA) system is designed to be upgraded with the addition of pump power when signal capacity of an optical communication link is correspondingly increased. The system includes a gain flattening filter (GFF) that remains valid when the system is upgraded because of the system design. Also disclosed are ways to enhance the GFF as well as control the channel signal gain tilt as well as adjust the external gain uniformity to be the same for an assembly line of OFA systems.Type: GrantFiled: February 28, 2001Date of Patent: May 14, 2002Assignee: SDL, Inc.Inventors: Paul N. Freeman, Stephen G. Grubb, Daniel A. Ratoff, David G. Mehuys
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Patent number: 6236498Abstract: A multistage optical fiber amplifier (OFA) system is designed to be upgraded with the addition of pump power when signal capacity of an optical communication link is correspondingly increased. The system includes a gain flattening filter (GFF) that remains valid when the system is upgraded because of the system design. Also disclosed are ways to enhance the GFF as well as control the channel signal gain tilt as well as adjust the external gain uniformity to be the same for an assembly line of OFA systems.Type: GrantFiled: February 19, 1999Date of Patent: May 22, 2001Assignee: SDL, Inc.Inventors: Paul N. Freeman, Stephen G. Grubb, Daniel A. Ratoff, David G. Mehuys
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Patent number: 6049554Abstract: An external cavity, continuously tunable wavelength source comprising a coherent light source having an external cavity including a reflector, such as a mirror or right-angle prism, for reflecting a selected wavelength from a diffraction grating back into the coherent light source. The wavelength is selected by simultaneous rotation and linear translation of the reflector about a pivot point such that the optical path length of the external cavity is substantially identical to a numerical integer of half wavelengths at a plurality of tunable wavelengths about a central wavelength of a tunable bandwidth for the source such that cavity phase error is zero at the central wavelength and is maximally flat on either side of the center wavelength within the tunable bandwidth. The location of said pivot axis is chosen to set the cavity phase error equal to zero and its first and second derivatives substantially equal to zero at exactly one wavelength.Type: GrantFiled: December 1, 1997Date of Patent: April 11, 2000Assignee: SDL, Inc.Inventors: Robert J. Lang, David G. Mehuys, David F. Welch
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Patent number: 5930029Abstract: An optical fiber amplifier having a doped fiber, through which an input signal propagates, is bi-directionally pumped in a manner that provides for a desired composite absorption profile such as, in one case, a uniform degree of local pump energy absorbed along at least a substantial length of the fiber. Co-propagating and a counter-propagating pump sources are prescribed to have their wavelengths selected relative to the peak absorption wavelength of the amplifier to provide for a uniform composite absorption profile across the length of the fiber thereby improving the overall inversion efficiency of the amplifier as well as providing for reduced amplifier noise figure.Type: GrantFiled: December 2, 1997Date of Patent: July 27, 1999Assignee: SDL, Inc.Inventor: David G. Mehuys
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Patent number: 5914978Abstract: A semiconductor gain medium has an optical cavity comprising a multimode region permitting propagation of light with a diverging phase front and a single mode region. An optical cavity is formed by optical feedback within the medium. Preferably, the feedback comprises a combination of a cleaved facet and a grating. The gain medium may be an amplifier or, in addition to the amplifier, may include a resonator cavity, or operate as an unstable resonator.Type: GrantFiled: April 29, 1998Date of Patent: June 22, 1999Assignee: SDL, Inc.Inventors: David F. Welch, David G. Mehuys, Donald R. Scifres
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Patent number: 5894492Abstract: A semiconductor laser having a light amplifying diode heterostructure with a flared gain region in an narrow aperture end whoch may be coupled to a single mode waveguide and a wide output end. A light emitting surface of the heterostructure proximate to the wide end of the flared gain region is partially reflective and combines with an external reflector to form a resonant cavity that is effectively unstable. The intracavity light-emitting surface proximate to the narrow aperture end is antireflection coated. The external reflector may be a planar mirror or a grating reflector. A lens or an optical fiber may couple the aperture end of the flared gain region to the external reflector. Frequency-selective feedback is provided by orienting the grating reflector or providing a prism in the cavity in front of the external planar mirror. Other filtering elements may also be placed in the external cavity.Type: GrantFiled: December 16, 1996Date of Patent: April 13, 1999Assignee: SDL, Inc.Inventors: David F. Welch, David G. Mehuys, Donald R. Scifres
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Patent number: 5864574Abstract: A semiconductor gain medium has an active gain region with a partially patterned radiation diverging region. The partially patterned radiation diverging region may be created with spatial resistive regions formed in a portion of the radiation diverging region having a narrower width than in other portions of the diverging region where the propagating radiation has a greater width. The gain region may be an amplifier or, in addition to the amplifier, may include a resonator cavity, or operate as an unstable resonator.Type: GrantFiled: March 29, 1996Date of Patent: January 26, 1999Assignee: SDL, Inc.Inventors: David F. Welch, David G. Mehuys, Donald R. Scifres
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Patent number: 5771252Abstract: An external cavity, continuously tunable wavelength source comprising a coherent light source having an external cavity including a reflector, such as a mirror or right-angle prism, for reflecting a selected wavelength from a diffraction grating back into the coherent light source. The wavelength is selected by simultaneous rotation and translational movement of the reflector about a pivot point such that the optical path length of the external cavity is substantially identical to a numerical integer of half wavelengths at a plurality of tunable wavelengths about a central wavelength of a tunable bandwidth for the source such that cavity phase error is zero at the central wavelength and is maximally flat on either side of the center wavelength within the tunable bandwidth. The location of said pivot axis is chosen to set the cavity phase error equal to zero and its first and second derivatives substantially equal to zero at exactly one wavelength.Type: GrantFiled: January 29, 1996Date of Patent: June 23, 1998Assignee: SDL, Inc.Inventors: Robert J. Lang, David G. Mehuys, David F. Welch
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Patent number: 5703897Abstract: A semiconductor laser having a light amplifying diode heterostructure body having a single spatial mode aperture region or waveguide and a flared or tapered gain region having a narrow input end and wider output end provided in a resonant cavity, a portion of which cavity may be external of the body. The flared gain region has a narrow aperture end and a wide output end with narrow aperture end optically coupled to a single mode waveguide. A saturable aborbing region is formed as part of the single mode waveguide region and not between it and the flared gain section, and is reverse biased to provide for mode locked operation. The flared gain region and waveguide may be differentially pumped or modulated with current provided by separate contacts, and the flared gain region may be divided into one or more flared gain sections which may be differentially or separately pumped.Type: GrantFiled: September 10, 1996Date of Patent: December 30, 1997Assignee: SDL, Inc.Inventors: David F. Welch, David G. Mehuys, Donald R. Scifres
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Patent number: 5696779Abstract: A wavelength tunable, semiconductor laser includes a gain region, e.g., a flared amplifier region, that permits light propagation with a diverging phase front along at least a portion of the gain region. Optical feedback defines a resonant laser cavity that has a first reflector at a first end of the cavity a second reflector at a second end of the cavity for reflecting at least a portion of the light back propagating in the cavity back into the cavity. Wavelength tuned selection, such as through orientation of a grating reflector or via a prism, is provided in the resonant laser cavity for producing a relatively lower optical loss in the cavity to a selected wavelength or a band of wavelengths of the light propagating within the cavity relative to other nonselected wavelengths such that stable laser oscillation is established at the selected wavelength or band of wavelengths.Type: GrantFiled: May 3, 1996Date of Patent: December 9, 1997Assignee: SDL, Inc.Inventors: David F. Welch, David G. Mehuys, Donald R. Scifres
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Patent number: 5651018Abstract: A wavelength-stabilized, semiconductor laser having a light amplifying diode heterostructure with a flared gain region in an external resonant cavity. The flared gain region has a narrow aperture end which may be coupled to a single mode waveguide and a wide output end. A light emitting surface of the heterostructure proximate to the Wide end of the flared gain region is partially reflective and combines with an external reflector to form a resonant cavity that is effectively unstable. The intracavity light-emitting surface proximate to the narrow aperture end is antireflection coated. The external reflector may be a planar mirror or a grating reflector. A lens or an optical fiber may couple the aperture end of the flared gain region to the external reflector. Frequency-selective feedback is provided by orienting the grating reflector or providing a prism in the cavity in front of the external planar mirror. Other filtering elements may also be placed in the external cavity.Type: GrantFiled: May 28, 1996Date of Patent: July 22, 1997Assignee: SDL, Inc.Inventors: David G. Mehuys, David F. Welch, Robert J. Lang, Donald R. Scifres
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Patent number: 5602864Abstract: A semiconductor laser having a light amplifying diode heterostructure with a flared gain region in an external resonant cavity. The flared gain region has a narrow aperture end which may be coupled to a single mode waveguide and a wide output end. A light emitting surface of the heterostructure proximate to the wide end of the flared gain region is partially reflective and combines with an external reflector to form a resonant cavity that is effectively unstable. The intracavity light-emitting surface proximate to the narrow aperture end is antireflection coated. The external reflector may be a planar mirror or a grating reflector. A lens or an optical fiber may couple the aperture end of the flared gain region to the external reflector. Frequency-selective feedback is provided by orienting the grating reflector or providing a prism in the cavity in front of the external planar mirror. Other filtering elements may also be placed in the external cavity.Type: GrantFiled: February 21, 1995Date of Patent: February 11, 1997Assignee: SDL, Inc.Inventors: David F. Welch, David G. Mehuys, Donald R. Scifres
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Patent number: 5592503Abstract: A semiconductor laser having a light amplifying diode heterostructure with a flared gain region in an external resonant cavity. The flared gain region has a narrow aperture end which may be coupled to a single mode waveguide and a wide output end. A light emitting surface of the heterostructure proximate to the wide end of the flared gain region is partially reflective and combines with an external reflector to form a resonant cavity that is effectively unstable. The intracavity light-emitting surface proximate to the narrow aperture end is antireflection coated. The external reflector may be a planar mirror or a grating reflector. A lens or an optical fiber may couple the aperture end of the flared gain region to the external reflector. Frequency-selective feedback is provided by orienting the grating reflector or providing a prism in the cavity in front of the external planar mirror. Other filtering elements may also be placed in the external cavity.Type: GrantFiled: June 21, 1994Date of Patent: January 7, 1997Assignee: SDL, Inc.Inventors: David F. Welch, David G. Mehuys, Donald R. Scifres
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Patent number: 5539571Abstract: An optical amplifier semiconductor device which is differentially pumped and a master oscillator power amplifier (MOPA) device employing such an amplifier. The amplifier allows the light propagating therein to diverge along at least part of its length, and may be a flared amplifier having a gain region that increases in width toward its output at a rate that equals or exceeds the divergence of the light. The amplifier is pumped with a current density at its input end which is smaller than the current density used to pump the output end for maintaining coherence of the beam to high power levels. Differential pumping may be both longitudinal and lateral within the amplifier. A single mode preamplifier section may be optically coupled to the input end of the amplifier. The amplifier input may have a width which is the same as or wider than that of the preamplifier output. The preamplifier may have a constant mode width or may be tapered to alter the divergence of the beams provided to the amplifier section.Type: GrantFiled: February 28, 1994Date of Patent: July 23, 1996Assignee: SDL, Inc.Inventors: David F. Welch, Donald R. Scifres, Robert G. Waarts, David G. Mehuys, Amos A. Hardy, Ross A. Parke
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Patent number: RE37051Abstract: A semiconductor gain medium has an optical cavity comprising a multimode region permitting propagation of light with a diverging phase front and a single mode region. An optical cavity is formed by optical feedback within the medium. Preferably, the feedback comprises a combination of a cleaved facet and a grating. The gain medium may be an amplifier or, in addition to the amplifier, may include a resonator cavity, or operate as an unstable resonator.Type: GrantFiled: October 15, 1999Date of Patent: February 13, 2001Assignee: SDL, Inc.Inventors: David F. Welch, David G. Mehuys, Donald R. Scifres
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Patent number: RE37354Abstract: A semiconductor laser having a light amplifying diode heterostructure with a flared gain region in an external resonant cavity. The flared gain region has a narrow aperture end which may be coupled to a single mode waveguide and a wide output end. A light emitting surface of the heterostructure proximate to the wide end of the flared gain region is partially reflective and combines with an external reflector to form a resonant cavity that is effectively unstable. The intracavity light-emitting surface proximate to the narrow aperture end is antireflection coated. The external reflector may be a planar mirror or a grating reflector. A lens or an optical fiber may couple the aperture end of the flared gain region to the external reflector. Frequency-selective feedback is provided by orienting the grating reflector or providing a prism in the cavity in front of the external planar mirror. Other filtering elements may also be placed in the external cavity.Type: GrantFiled: October 15, 1999Date of Patent: September 4, 2001Assignee: SDL, Inc.Inventors: David F. Welch, David G. Mehuys, Donald R. Scifres