Abstract: Using fundamental electronic structure properties as an indicative of defect tolerance, a broad class of semiconductors containing partially oxidized cations can be identified, as well as several specific instances that can share these properties. These defect tolerant semiconductors can make a high-performance optoelectric device, for example, photovoltaic cells.

Abstract: A device includes a back contact, an absorber layer coupled to the back contact, a buffer layer coupled to the absorber layer; and an amorphous transparent conductive layer coupled to the buffer layer, wherein the amorphous transparent conductive phase is characterized by, as a function of composition, i) a range of band gaps and ii) a range of work functions.

Abstract: Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

Abstract: Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

Abstract: A crystalline, highly textured or biaxially textured, foreign (non-silicon) material, which is closely lattice-matched to silicon, is deposited on a glass or other amorphous or multi-crystalline substrate to provide a template for hetero-epitaxial growth of highly ordered crystalline silicon semiconductor layers on such substrates. This process enables crystalline silicon semiconductor devices, such as photovoltaic devices, transistors, and the like, on such inexpensive substrates, or to enable reduced temperature processing for some kinds of semiconductor devices, such as bottom gate transistors, on crystalline silicon substrates.

Abstract: An improved organic solar cell converts light into electricity. The organic solar cell includes a cathode, an anode, and a bulk heterojunction material disposed therebetween. The bulk heterojunction material includes a plurality of group IV nanocrystals (e.g., silicon nanocrystals) disposed within an organic absorber (e.g., an organic polymer).

Abstract: A tunable circuit (10) for a capacitively tunable capacitor device (12) is provided. The tunable circuit (10) comprises a tunable circuit element (14) and a non-tunable electric element (16) coupled to the tunable circuit element (16). A tunable capacitor device (12) and a method for increasing the figure of merit in a tunable capacitor device (12) are also provided.

Abstract: In a process for deposition of material onto a substrate, for example, the deposition of metals or dielectrics onto a semiconductor laser, the material is deposited by providing a colloidal suspension of the material and directly writing the suspension onto the substrate surface by ink jet printing techniques. This procedure minimizes the handling requirements of the substrate during the deposition process and also minimizes the exchange of energy between the material to be deposited and the substrate at the interface. The deposited material is then resolved into a desired pattern, preferably by subjecting the deposit to a laser annealing step. The laser annealing step provides high resolution of the resultant pattern while minimizing the overall thermal load of the substrate and permitting precise control of interface chemistry and interdiffusion between the substrate and the deposit.