Abstract: Methods, systems, and devices for multi-layer capacitors for three-dimensional memory systems are described. Memory cells of a memory system may include capacitors having dielectric material between multiple interfaces (e.g., concentric interfaces) of a bottom electrode and a top electrode. A bottom electrode may include a first portion wrapping around a portion of a semiconductor material that is contiguous with a channel of a transistor, and a top electrode may include a first portion wrapping around the first portion of the bottom electrode. The bottom electrode may also include a second portion wrapping around the first portion of the top electrode, and the top electrode may also include a second portion wrapping around the second portion of the bottom electrode. The dielectric material may include respective portions between each interface of the bottom electrode and top electrode which, in some examples, may be a contiguous implementation of the dielectric material.

Abstract: Diffraction which is used to measure features on a substrate layer is disclosed. A substrate, such as a mask structure for microelectronics or a semiconductor substrate with reflective or transmissive features, is irradiated by a source emitting radiation of known wavelength at an angle of incidence relative to the substrate. Given a known pitch, the width of the features themselves is measured by analyzing a diffraction pattern by computer after capturing characteristics of the pattern with a detector.

Abstract: Method and structure for masking are disclosed. In one embodiment, a thin layer of radiation sensitive material is combined with another layer of radiation opaque material with different etch selectivity to facilitate a multi-stage patterning treatment of an underlying mask layer and a resultant critical dimension in the patterned mask which may be less than that available using conventional patterning techniques.

Abstract: Method and structure for masking are disclosed. In one embodiment, a thin layer of radiation sensitive material is combined with another layer of radiation opaque material with different etch selectivity to facilitate a multi-stage patterning treatment of an underlying mask layer and a resultant critical dimension in the patterned mask which may be less than that available using conventional patterning techniques.