Patents by Inventor David H. Uchimura

David H. Uchimura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4678540
    Abstract: In an aluminum etch process using SiCl.sub.4 in a plasma reactor, edge profile is controlled by adding predetermined amounts of nitrogen and chlorine. The resulting aniosotropic etch causes walls to have a 60.degree.-90.degree. angle with respect to the substrate. Edge profile is further controlled by tapering the photoresist mask, e.g.
    Type: Grant
    Filed: June 9, 1986
    Date of Patent: July 7, 1987
    Assignee: Tegal Corporation
    Inventor: David H. Uchimura