Abstract: A technique for improving the thermal power dissipation of an integrated circuit includes reducing the thermal resistivity of the integrated circuit by increasing heat transfer in vertical and/or lateral directions. These results are achieved by increasing the surface area of the backside and/or the surface area of the lateral sides of the integrated circuit die. In some embodiments of the invention, an integrated circuit includes circuit elements formed closer to a first surface of a semiconductor substrate than to a second surface of the semiconductor substrate. The semiconductor substrate has a varying profile that substantially increases the surface area of a thermal interface formed on the second surface as compared to the second surface being substantially planar. A maximum depth of the profile is less than the thickness of the semiconductor substrate.

Abstract: Defect analysis of an integrated circuit die having an internal heat source is enhanced using a method and system that use the internal heat source to heat the die. According to an example embodiment of the present invention, a semiconductor die having a liquid crystal layer is analyzed by detecting a liquid crystal phase change caused by electrical operation of the die. A first circuit region is electrically operated and used as the primary heat source to generate sufficient heat at a second circuit region to effect a separately viewable phase change in an area of the liquid crystal layer corresponding to the second circuit region. The internal heat source is adapted to cause the liquid crystal phase change without necessarily heating the die with an external heat source. A detector is adapted and used to detect the liquid crystal phase change in the area corresponding to the second circuit region.

Abstract: Defect analysis of an integrated circuit die is enhanced using a method and system that make possible the detection of defect-related heat generation in the die. According to an example embodiment of the present invention, a semiconductor die having a liquid crystal layer is analyzed by detecting a liquid crystal phase change caused by heating the die. The heating causes a first circuit region and a second circuit region to effect a separate phase change in corresponding areas of the liquid crystal layer. A detector is adapted to use time-lapsed analysis to detect the liquid crystal phase change in the area corresponding to the second circuit region before the corresponding areas cease to be separately detectable.

Abstract: Defect analysis of a flip chip die having a back side opposite circuitry at a circuit side and a liquid crystal layer is enhanced using a method and system that makes possible the detection of the defect from the back side of the flip chip. According to an example embodiment of the present invention, a flip chip die having a liquid crystal layer is analyzed by detecting a liquid crystal phase change caused by heat generation at a defect in the die. By detecting the phase change associated with a defect, the defect can be located. The defect detection can be used through the back side of the die, and can be used to detect defects located near intrinsic heat sources that make conventional liquid crystal analysis difficult or even impossible.