Patents by Inventor David Hasen

David Hasen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20100265762
    Abstract: A structure for a memory device including a plurality of substantially planar thin-film layers or a plurality of conformal thin-film layers is disclosed. The thin-film layers form a memory element that is electrically in series with first and second cladded conductors and operative to store data as a plurality of conductivity profiles. A select voltage applied across the first and second cladded conductors is operative to perform data operations on the memory device. The memory device may optionally include anon-ohmic device electrically in series with the memory element and the first and second cladded conductors. Fabrication of the memory device does not require the plurality of thin-film layers be etched in order to form the memory element. The memory element can include a CMO layer having a selectively crystallized polycrystalline portion and an amorphous portion. The cladded conductors can include a core material made from copper.
    Type: Application
    Filed: June 21, 2010
    Publication date: October 21, 2010
    Applicant: UNITY SEMICONDUCTOR CORPORATION
    Inventors: Robin Cheung, Darrell Rinerson, Travis Byonghyop Oh, Jon Bornstein, David Hasen