Abstract: Systems and methods to provide an ultrasound scanner that supports handset wireless network connectivity are described. An ultrasound scanner includes a transducer system that generates, as part of an ultrasound examination, ultrasound data based on reflections of ultrasound signals transmitted by the transducer system. The ultrasound scanner includes a first transceiver that communicates, over a first communication link, the ultrasound data to a display device that displays an ultrasound image based on the ultrasound data. The ultrasound scanner includes one or more additional transceivers that communicate, over a one or more additional communication links and simultaneously with the first transceiver communicating the ultrasound data over the first communication link, the ultrasound data through an access point of a care facility administering the ultrasound examination.

Abstract: In an exemplary process for lower dose rate ion implantation of a work piece, an ion beam may be generated using an ion source and an extraction manipulator. The extraction manipulator may be positioned at a gap distance from an exit aperture of the ion source. A current of the ion beam exiting the extraction manipulator may be maximized when the extraction manipulator is positioned at an optimal gap distance from the exit aperture. The gap distance at which the extraction manipulator is positioned from the exit aperture may differ from the optimal gap distance by at least 10 percent. A first potential may be applied to a first set of electrodes. An x-dimension of the ion beam may increase as the ion beam passes through the first set of electrodes. The work piece may be positioned in the ion beam to implant ions into the work piece.

Abstract: A method of setting up a medium current ribbon beam for ion implantation is provided. It includes providing an ion source fed with a process gas and a support gas. The process ion beam is separated from the support gas beam with a mass analyzing magnet, and the intensity of the process ion beam is controlled by varying the ratio of process gas to support gas in the ion source gas feed. Process beam intensity may also be controlled with one or more mechanical current limiting devices located downstream of the ion source. An ion beam system is also provided. This method may control the total ribbon beam intensity at the target between approximately 3 uA to about 3 mA.

Abstract: In an exemplary process for lower dose rate ion implantation of a work piece, an ion beam may be generated using an ion source and an extraction manipulator. The extraction manipulator may be positioned at a gap distance from an exit aperture of the ion source. A current of the ion beam exiting the extraction manipulator may be maximized when the extraction manipulator is positioned at an optimal gap distance from the exit aperture. The gap distance at which the extraction manipulator is positioned from the exit aperture may differ from the optimal gap distance by at least 10 percent. A first potential may be applied to a first set of electrodes. An x-dimension of the ion beam may increase as the ion beam passes through the first set of electrodes. The work piece may be positioned in the ion beam to implant ions into the work piece.

Abstract: A method of setting up a medium current ribbon beam for ion implantation is provided. It includes providing an ion source fed with a process gas and a support gas. The process ion beam is separated from the support gas beam with a mass analyzing magnet, and the intensity of the process ion beam is controlled by varying the ratio of process gas to support gas in the ion source gas feed. Process beam intensity may also be controlled with one or more mechanical current limiting devices located downstream of the ion source. An ion beam system is also provided. This method may control the total ribbon beam intensity at the target between approximately 3 uA to about 3 mA.

Abstract: An ion implanter for creating a ribbon or ribbon-like beam by having a scanning device that produces a side to side scanning of ions emitting by a source to provide a thin beam of ions moving into an implantation chamber. A workpiece support positions a workpiece within the implantation chamber and a drive moves the workpiece support up and down through the thin ribbon beam of ions perpendicular to the plane of the ribbon to achieve controlled beam processing of the workpiece. A control includes a first control output coupled to said scanning device to limit an extent of side to side scanning of the ion beam to less than a maximum amount and thereby limit ion processing of the workpiece to a specified region of the workpiece and a second control output coupled to the drive simultaneously limits an extent of up and down movement of the workpiece to less than a maximum amount and to cause the ion beam to impact a controlled portion of the workpiece.

Abstract: A portable, battery-powered per-patient device automatically detects and logs patient encounters with items, such as medical equipment, drug containers, caregivers, visitors and other patients, in a healthcare facility. A separate per-patient device is assigned to each patient in the facility. The per-patient device is intended to remain with the patient during the patient's stay. The device may be attached to the patient's bed, wheelchair, walker or the like. If the patient is ambulatory, the patient may carry the device. RF-ID or other suitable tags are attached to items that a patient may encounter. Each per-patient device automatically detects and logs RF-ID-tagged items, including the patient, that come within a range of the device. The device also detects and longs when an item is no longer within range of the device, such as because a caregiver leaves the patient's room or a medical device is removed from the patient's room.

Abstract: An ion implanter for creating a ribbon or ribbon-like beam by having a scanning device that produces a side to side scanning of ions emitting by a source to provide a thin beam of ions moving into an implantation chamber. A workpiece support positions a workpiece within the implantation chamber and a drive moves the workpiece support up and down through the thin ribbon beam of ions perpendicular to the plane of the ribbon to achieve controlled beam processing of the workpiece. A control includes a first control output coupled to said scanning device to limit an extent of side to side scanning of the ion beam to less than a maximum amount and thereby limit ion processing of the workpiece to a specified region of the workpiece and a second control output coupled to the drive simultaneously limits an extent of up and down movement of the workpiece to less than a maximum amount and to cause the ion beam to impact a controlled portion of the workpiece.