Abstract: A method of fabricating a semiconductor device includes placing a semiconductor wafer into a first deposition chamber of a manufacturing platform, the semiconductor wafer comprising a first conductive layer, depositing a dielectric layer on the first conductive layer in the first deposition chamber, placing the semiconductor wafer in a second deposition chamber of the manufacturing platform, and depositing a second conductive layer on the dielectric layer in the second deposition chamber. The method further includes placing the semiconductor wafer into a processing chamber of an electric-field annealer of the manufacturing platform, and in the processing chamber, applying an electrical bias voltage across the dielectric layer by coupling the first conductive layer to a first potential and coupling the second conductive layer to a second potential, and annealing the semiconductor wafer while applying the electrical bias voltage.

Abstract: The disclosure describes equipment for magnetic annealing of a substrate, the equipment including: an anneal chamber configured to heat and cool a substrate held at a soak location along a first direction in the anneal chamber, the anneal chamber including: a heater, a cooler, and a substrate lifter including a substrate holder, where the substrate holder is configured to support a substrate oriented such that the first direction is perpendicular to a major surface of the substrate; and a magnet assembly configured to establish a homogeneous zone in the anneal chamber, the soak location being within the homogeneous zone, the homogeneous zone including a region of magnetic field.

Abstract: A method of fabricating a semiconductor device includes placing a semiconductor wafer into a first deposition chamber of a manufacturing platform, the semiconductor wafer comprising a first conductive layer, depositing a dielectric layer on the first conductive layer in the first deposition chamber, placing the semiconductor wafer in a second deposition chamber of the manufacturing platform, and depositing a second conductive layer on the dielectric layer in the second deposition chamber. The method further includes placing the semiconductor wafer into a processing chamber of an electric-field annealer of the manufacturing platform, and in the processing chamber, applying an electrical bias voltage across the dielectric layer by coupling the first conductive layer to a first potential and coupling the second conductive layer to a second potential, and annealing the semiconductor wafer while applying the electrical bias voltage.

Abstract: A system for processing semiconductor wafers, the system including: a processing chamber; a heat source; a substrate holder configured to expose a semiconductor wafer to the heat source; a first electrode configured to be detachably coupled to a first major surface of a semiconductor wafer; and a second electrode coupled to the substrate holder, the first electrode and the second electrode together configured to apply an electric field in the semiconductor wafer.

Abstract: A method of fabricating a semiconductor device includes placing a semiconductor wafer into a processing chamber, the semiconductor wafer including a first conductive layer and a second conductive layer separated by an intermediate layer; applying an electrical bias voltage across the intermediate layer by coupling the first conductive layer to a first potential and coupling the second conductive layer to a second potential; and annealing the semiconductor wafer while applying the electrical bias voltage.

Abstract: The disclosure describes equipment for magnetic annealing of a substrate, the equipment including: an anneal chamber configured to heat and cool a substrate held at a soak location along a first direction in the anneal chamber, the anneal chamber including: a heater, a cooler, and a substrate lifter including a substrate holder, where the substrate holder is configured to support a substrate oriented such that the first direction is perpendicular to a major surface of the substrate; and a magnet assembly configured to establish a homogeneous zone in the anneal chamber, the soak location being within the homogeneous zone, the homogeneous zone including a region of magnetic field.

Abstract: A method and apparatus for measuring multiple parameters of drilling fluid using electric field perturbation, permittivity curves, time domain analysis and frequency domain analysis to identify constituents of drilling fluid and ratios of the drilling fluid constituents on a real time basis and to measure volumes and densities of the constituents on a real time basis.

Abstract: An apparatus for magnetic annealing one or more workpieces, and a method of operating the apparatus, are described. The apparatus includes: a workpiece holder configured to support one or more workpieces, wherein the one or more workpieces having at least one substantially planar surface; an optional workpiece heating system configured to elevate the one or more workpieces to an anneal temperature; and a magnet assembly having a first magnet and a second magnet, the first and second magnets defining a gap between opposing poles of each magnet, wherein the magnet assembly is arranged to generate a magnetic field substantially perpendicular to the planar surface of the one or more workpieces.

Abstract: A method of fabricating a semiconductor device includes placing a semiconductor wafer into a processing chamber, the semiconductor wafer including a first conductive layer and a second conductive layer separated by an intermediate layer; applying an electrical bias voltage across the intermediate layer by coupling the first conductive layer to a first potential and coupling the second conductive layer to a second potential; and annealing the semiconductor wafer while applying the electrical bias voltage.

Abstract: A method of fabricating a semiconductor device includes placing a semiconductor wafer into a processing chamber, the semiconductor wafer including a first conductive layer and a second conductive layer separated by an intermediate layer; applying an electrical bias voltage across the intermediate layer by coupling the first conductive layer to a first potential and coupling the second conductive layer to a second potential; and annealing the semiconductor wafer while applying the electrical bias voltage.

Abstract: A method for identifying and characterizing a condensate entrained in a fluid using time domain analysis and frequency domain analysis to identify individual volume fraction constituents and condensates within a pipe on a real time basis and to measure the volume of the individual volume fraction constituents and condensates flowing through the pipe on a real time basis.

Abstract: A method of fabricating a semiconductor device includes placing a semiconductor wafer into a first deposition chamber of a manufacturing platform, the semiconductor wafer comprising a first conductive layer, depositing a dielectric layer on the first conductive layer in the first deposition chamber, placing the semiconductor wafer in a second deposition chamber of the manufacturing platform, and depositing a second conductive layer on the dielectric layer in the second deposition chamber. The method further includes placing the semiconductor wafer into a processing chamber of an electric-field annealer of the manufacturing platform, and in the processing chamber, applying an electrical bias voltage across the dielectric layer by coupling the first conductive layer to a first potential and coupling the second conductive layer to a second potential, and annealing the semiconductor wafer while applying the electrical bias voltage.

Abstract: A method of fabricating a semiconductor device includes placing a semiconductor wafer into a processing chamber, the semiconductor wafer including a first conductive layer and a second conductive layer separated by an intermediate layer; applying an electrical bias voltage across the intermediate layer by coupling the first conductive layer to a first potential and coupling the second conductive layer to a second potential; and annealing the semiconductor wafer while applying the electrical bias voltage.

Abstract: A system for processing semiconductor wafers, the system including: a processing chamber; a heat source; a substrate holder configured to expose a semiconductor wafer to the heat source; a first electrode configured to be detachably coupled to a first major surface of a semiconductor wafer; and a second electrode coupled to the substrate holder, the first electrode and the second electrode together configured to apply an electric field in the semiconductor wafer.

Abstract: A substrate processing device and a processing system process substrates each having a magnetic layer individually and are provided with: a support unit for supporting a substrate; a heating unit for heating the substrate supported on the support unit; a cooling unit for cooling the substrate supported on the support unit; a magnet unit for generating a magnetic field; and a processing chamber accommodating the support unit, the heating unit, and the cooling unit. The magnet unit includes a first and a second end surface which extend in parallel. The first and the second end surface are opposite to each other while being spaced apart from each other. The first end surface corresponds to a first magnetic pole of the magnet unit. The second end surface corresponds to a second magnetic pole of the magnet unit. The processing chamber is disposed between the first and the second end surface.

Abstract: A method and apparatus for measuring multiple parameters of drilling fluid using electric field perturbation, permittivity curves, time domain analysis and frequency domain analysis to identify constituents of drilling fluid and ratios of the drilling fluid constituents on a real time basis and to measure volumes and densities of the constituents on a real time basis.

Abstract: An apparatus for magnetic annealing one or more workpieces, and a method of operating the apparatus, are described. The apparatus includes: a workpiece holder configured to support one or more workpieces, wherein the one or more workpieces having at least one substantially planar surface; an optional workpiece heating system configured to elevate the one or more workpieces to an anneal temperature; and a magnet assembly having a first magnet and a second magnet, the first and second magnets defining a gap between opposing poles of each magnet, wherein the magnet assembly is arranged to generate a magnetic field substantially perpendicular to the planar surface of the one or more workpieces.

Abstract: A method for identifying and characterizing a condensate entrained in a fluid using time domain analysis and frequency domain analysis to identify individual volume fraction constituents and condensates within a pipe on a real time basis and to measure the volume of the individual volume fraction constituents and condensates flowing through the pipe on a real time basis.

Abstract: A method for identifying and measuring volume fraction constituents of a fluid using time domain analysis and frequency domain analysis to identify individual volume fraction constituents within a pipe on a real time basis and to measure the volume of the individual volume fraction constituents flowing through the pipe on a real time basis.

Abstract: An apparatus for identifying and measuring volume fraction constituents of a fluid using time domain analysis and frequency domain analysis to identify individual volume fraction constituents within a pipe on a real time basis and to measure the volume of the individual volume fraction constituents flowing through the pipe on a real time basis.