Abstract: A method to remove a contaminant from a material comprises using a drive mechanism to provide a plurality of portions of material to a nozzle in order to generate a jet of the portions of material from the nozzle. At least some of the portions of material are at least partially coated in a contaminant. The jet of the portions of material are directed at a surface of a volume of liquid. An interaction between the jet of the portions of material and the surface of the volume of liquid causes at least some of the contaminant to detach from at least some of the portions of material.

Abstract: A method to remove a contaminant from a material comprises using a drive mechanism to provide a plurality of portions of material to a nozzle in order to generate a jet of the portions of material from the nozzle. At least some of the portions of material are at least partially coated in a contaminant. The jet of the portions of material are directed at a surface of a volume of liquid. An interaction between the jet of the portions of material and the surface of the volume of liquid causes at least some of the contaminant to detach from at least some of the portions of material.

Abstract: A method of improving radiation tolerance of floating gate memories is provided herein. Floating gate memories can include a floating gate transistor or a block of floating gate transistors. A floating gate transistor can include a semiconductor region, a source region, a drain region, a floating gate region, a tunnel oxide region, an oxide-nitride-oxide region, and a control gate region. A floating gate transistor or block of floating gate transistors can be written to multiple times in order to accumulate charge on one or more floating gate regions in accordance with an embodiment of the invention. When exposed to radiation, a floating gate region can retain its charge above a certain voltage threshold. A block of floating gate transistors can communicate with an external device where the external device can read a state of the block of floating gate transistors in accordance with an embodiment of the invention.

Abstract: A method of improving radiation tolerance of floating gate memories is provided herein. Floating gate memories can include a floating gate transistor or a block of floating gate transistors. A floating gate transistor can include a semiconductor region, a source region, a drain region, a floating gate region, a tunnel oxide region, an oxide-nitride-oxide region, and a control gate region. A floating gate transistor or block of floating gate transistors can be written to multiple times in order to accumulate charge on one or more floating gate regions in accordance with an embodiment of the invention. When exposed to radiation, a floating gate region can retain its charge above a certain voltage threshold. A block of floating gate transistors can communicate with an external device where the external device can read a state of the block of floating gate transistors in accordance with an embodiment of the invention.

Abstract: Apparatuses and methods are provided using a plurality of interrupted IC operations to detect various conditions or changes of interest to integrated circuit (IC) elements (e.g., memory cells of NAND Flash memories or floating gate transistor) such as program/erase stress, total ionizing dose, and heavy ion exposure which modify normal IC element bit state changes. An exemplary method can include controlling a plurality of selected IC elements to execute a series of PROGRAM or ERASE operations on all of the plurality of selected elements that are each interrupted or halted before a normal or first time period required for the PROGRAM or ERASE operation has elapsed. An exemplary system records a number of interrupted operations required to cause a state change in each of the plurality of selected IC elements. Embodiments of the invention enable detection of stresses far below at least some thresholds for IC element or bit cell failure.

Abstract: Apparatuses and methods are provided using a plurality of interrupted IC operations to detect various conditions or changes of interest to integrated circuit (IC) elements (e.g., memory cells of NAND Flash memories or floating gate transistor) such as program/erase stress, total ionizing dose, and heavy ion exposure which modify normal IC element bit state changes. An exemplary method can include controlling a plurality of selected IC elements to execute a series of PROGRAM or ERASE operations on all of the plurality of selected elements that are each interrupted or halted before a normal or first time period required for the PROGRAM or ERASE operation has elapsed. An exemplary system records a number of interrupted operations required to cause a state change in each of the plurality of selected IC elements. Embodiments of the invention enable detection of stresses far below at least some thresholds for IC element or bit cell failure.

Abstract: A method of improving radiation tolerance of floating gate memories is provided herein. Floating gate memories can include a floating gate transistor or a block of floating gate transistors. A floating gate transistor can include a semiconductor region, a source region, a drain region, a floating gate region, a tunnel oxide region, an oxide-nitride-oxide region, and a control gate region. A floating gate transistor or block of floating gate transistors can be written to multiple times in order to accumulate charge on one or more floating gate regions in accordance with an embodiment of the invention. When exposed to radiation, a floating gate region can retain its charge above a certain voltage threshold. A block of floating gate transistors can communicate with an external device where the external device can read a state of the block of floating gate transistors in accordance with an embodiment of the invention.

Abstract: A method of improving radiation tolerance of floating gate memories is provided herein. Floating gate memories can include a floating gate transistor or a block of floating gate transistors. A floating gate transistor can include a semiconductor region, a source region, a drain region, a floating gate region, a tunnel oxide region, an oxide-nitride-oxide region, and a control gate region. A floating gate transistor or block of floating gate transistors can be written to multiple times in order to accumulate charge on one or more floating gate regions in accordance with an embodiment of the invention. When exposed to radiation, a floating gate region can retain its charge above a certain voltage threshold. A block of floating gate transistors can communicate with an external device where the external device can read a state of the block of floating gate transistors in accordance with an embodiment of the invention.

Abstract: A method of improving radiation tolerance of floating gate memories is provided herein. Floating gate memories can include a floating gate transistor or a block of floating gate transistors. A floating gate transistor can include a semiconductor region, a source region, a drain region, a floating gate region, a tunnel oxide region, an oxide-nitride-oxide region, and a control gate region. A floating gate transistor or block of floating gate transistors can be written to multiple times in order to accumulate charge on one or more floating gate regions in accordance with an embodiment of the invention. When exposed to radiation, a floating gate region can retain its charge above a certain voltage threshold. A block of floating gate transistors can communicate with an external device where the external device can read a state of the block of floating gate transistors in accordance with an embodiment of the invention.

Abstract: A method of improving radiation tolerance of floating gate memories is provided herein. Floating gate memories can include a floating gate transistor or a block of floating gate transistors. A floating gate transistor can include a semiconductor region, a source region, a drain region, a floating gate region, a tunnel oxide region, an oxide-nitride-oxide region, and a control gate region. A floating gate transistor or block of floating gate transistors can be written to multiple times in order to accumulate charge on one or more floating gate regions in accordance with an embodiment of the invention. When exposed to radiation, a floating gate region can retain its charge above a certain voltage threshold. A block of floating gate transistors can communicate with an external device where the external device can read a state of the block of floating gate transistors in accordance with an embodiment of the invention.

Abstract: A method of improving radiation tolerance of floating gate memories is provided herein. Floating gate memories can include a floating gate transistor or a block of floating gate transistors. A floating gate transistor can include a semiconductor region, a source region, a drain region, a floating gate region, a tunnel oxide region, an oxide-nitride-oxide region, and a control gate region. A floating gate transistor or block of floating gate transistors can be written to multiple times in order to accumulate charge on one or more floating gate regions in accordance with an embodiment of the invention. When exposed to radiation, a floating gate region can retain its charge above a certain voltage threshold. A block of floating gate transistors can communicate with an external device where the external device can read a state of the block of floating gate transistors in accordance with an embodiment of the invention.

Abstract: A method of improving radiation tolerance of floating gate memories is provided herein. Floating gate memories can include a floating gate transistor or a block of floating gate transistors. A floating gate transistor can include a semiconductor region, a source region, a drain region, a floating gate region, a tunnel oxide region, an oxide-nitride-oxide region, and a control gate region. A floating gate transistor or block of floating gate transistors can be written to multiple times in order to accumulate charge on one or more floating gate regions in accordance with an embodiment of the invention. When exposed to radiation, a floating gate region can retain its charge above a certain voltage threshold. A block of floating gate transistors can communicate with an external device where the external device can read a state of the block of floating gate transistors in accordance with an embodiment of the invention.

Abstract: An article (101) for insertion into molten steel (102) to increase titanium content of the steel. The article comprises a container (201) formed from a metal or metal alloy, and a mixture (202) enclosed within the container. The mixture comprises: iron in the form of an oxide; titanium in the form of an oxide; and aluminium or aluminium alloy. The mixture is such that when heated it reacts to oxidise the aluminium and produce ferro-titanium alloy.

Abstract: Various embodiments and methods relating to a camera mount are disclosed.