Patents by Inventor David Irby

David Irby has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Evolution of tRNA synthetases
    Patent number: 11447809
    Abstract: The disclosure provides amino acid sequence variants of orthogonal aminoacyl-tRNA synthetases (AARSs) having increased activity and selectivity compared to previous AARSs, and methods of producing the same.
    Type: Grant
    Filed: July 3, 2018
    Date of Patent: September 20, 2022
    Assignee: President and Fellows of Harvard College
    Inventors: David R. Liu, David Irby Bryson, Jr.
  • EVOLUTION OF TRNA SYNTHETASES
    Publication number: 20220154237
    Abstract: The disclosure provides amino acid sequence variants of orthogonal aminoacyl-tRNA synthetases (AARSs) having increased activity and selectivity compared to previous AARSs, and methods of producing the same.
    Type: Application
    Filed: July 3, 2018
    Publication date: May 19, 2022
    Applicant: President and Fellows of Harvard College
    Inventors: David R. Liu, David Irby Bryson, JR.
  • Systems, masks, and methods for manufacturable masks using a functional representation of polygon pattern
    Patent number: 7698665
    Abstract: Photomask patterns are represented using contours defined by mask functions or other formats. Given target pattern, contours may be optimized such that defined photomask, when used in photolithographic process, prints wafer pattern faithful to target pattern. Optimized patterns or blocks may be simplified for mask manufacturing.
    Type: Grant
    Filed: October 6, 2005
    Date of Patent: April 13, 2010
    Assignee: Luminescent Technologies, Inc.
    Inventors: Daniel S. Abrams, David Irby
  • Systems, masks, and methods for manufacturable masks
    Publication number: 20070009808
    Abstract: Photomask patterns are represented using contours defined by mask functions or other formats. Given target pattern, contours may be optimized such that defined photomask, when used in photolithographic process, prints wafer pattern faithful to target pattern. Optimized patterns or blocks may be simplified for mask manufacturing.
    Type: Application
    Filed: October 6, 2005
    Publication date: January 11, 2007
    Inventors: Daniel Abrams, David Irby