Abstract: Systems and methods for material processing using wafer scale waves of precisely controlled electrons in a DC plasma is presented. A surface floating potential of a substrate placed atop a stage in a positive column of the DC plasma is adjusted and maintained to a reference potential. A periodic biasing signal referenced to the reference potential is capacitively coupled to the stage to control a surface potential at the substrate according to: an active phase for provision of kinetic energy to free electrons in the DC plasma for activation of targeted bonds at the surface of the substrate; a neutralization phase for repelling of the free electrons from the surface of the substrate; and an initialization phase for restoring an initial condition of the surface floating potential.

Abstract: A louvre window having: a frame, the frame having a head, a sill and at least two jambs; a drive bar located in one or both of the jambs that is movable by a handle; a plurality of blades located within the frame and connected to the drive bar by a pivot drive connector, such that movement of the drive bar urges the blades to pivot, each blade having: a first windowpane attached to the blade; and a second windowpane attached to the blade, wherein operation of the handle causes movement of the blades between an open position and a closed position, wherein in the open position the first windowpanes are aligned to form a barrier against airflow and the second windowpanes are aligned to form a barrier against airflow and in the closed position the first windowpanes are pivoted out of alignment to allow airflow and the second windowpanes are pivoted out of alignment to allow airflow.

Abstract: An application mapping procedure obtains and aggregates application mapping information from a plurality of machines in a distributed system. An application dependency map, including first layer of application mapping information, is initialized, and then a first query is sent to one or more of the machines. In response, information identifying entities that have participated in predefined communications with entities identified in an existing layer of application mapping information in the application dependency map are received, and a second layer of application mapping information is added to the application dependency map, based at least in part on the information received in response to the first query. After adding the second layer of application mapping information to the application dependency map, a second query is sent to one or more of the of the endpoint machines, the second query being based at least in part on the application dependency map.

Abstract: Atomic layer etching (ALE) of a substrate using a wafer scale wave of precisely controlled electrons is presented. A volume of gaseous plasma including diluent and reactive species and electrons of a uniform steady state composition is generated in a positive column of a DC plasma proximate the substrate. A corrosion layer is formed on the substrate by adsorption of the reactive species to atoms at the surface of the substrate. The substrate is positively biased to draw electrons from the volume to the surface of the substrate and impart energy to the electrons to stimulate electron transitions in the corrosion layer species, resulting in ejection of the corrosion layer species via electron stimulation desorption (ESD). The substrate is negatively biased to repel the electrons from the surface of the substrate back to the volume, followed by a zero bias to restore the steady state composition of the volume.

Abstract: A power tool includes a housing containing a motor, an output member configured to be driven by the motor to perform an operation on a workpiece, and a handle having a first end portion coupled to the housing and a second end portion. A base is coupled to the second end portion of the handle. A light emitting assembly is pivotably coupled to the base. The light emitting assembly is configured to be operable in a first mode to illuminate a workpiece and a second mode to indicate a condition of the power tool responsive to the power tool signaling the condition to the light emitting assembly.

Abstract: A method for producing a perovskite material photovoltaic device, the method comprising: depositing a layer comprising a fullerene or fullerene derivative on a perovskite material; depositing a cross-linking agent on the perovskite material or the layer comprising the fullerene or fullerene derivative, wherein the cross-linking agent comprises a silane, wherein the silane is a halosilyalkane; and depositing one or more polymers on the perovskite material or the layer comprising the fullerene or fullerene derivative.

Abstract: Systems and methods for material processing using wafer scale waves of precisely controlled electrons in a DC plasma is presented. A surface floating potential of a substrate placed atop a stage in a positive column of the DC plasma is adjusted and maintained to a reference potential. A periodic biasing signal referenced to the reference potential is capacitively coupled to the stage to control a surface potential at the substrate according to: an active phase for provision of kinetic energy to free electrons in the DC plasma for activation of targeted bonds at the surface of the substrate; a neutralization phase for repelling of the free electrons from the surface of the substrate; and an initialization phase for restoring an initial condition of the surface floating potential.

Abstract: Atomic layer etching of a substrate using a wafer scale wave of precisely controlled electrons is presented. A volume of gaseous plasma including diluent and reactive species and electrons of a uniform steady state composition is generated in a positive column of a DC plasma proximate the substrate. A corrosion layer is formed on the substrate by adsorption of the reactive species to atoms at the surface of the substrate. The substrate is positively biased to draw electrons from the volume to the surface of the substrate and impart an energy to the electrons so to stimulate electron transitions in the corrosion layer species, resulting in ejection of the corrosion layer species via electron stimulation desorption (ESD). The substrate is negatively biased to repel the electrons from the surface of the substrate back to the volume, followed by a zero bias to restore the steady state composition of the volume.

Abstract: A power tool includes a housing containing a motor, an output member configured to be driven by the motor to perform an operation on a workpiece, and a handle having a first end portion coupled to the housing and a second end portion. A base is coupled to the second end portion of the handle. A light emitting assembly is pivotably coupled to the base. The light emitting assembly is configured to be operable in a first mode to illuminate a workpiece and a second mode to indicate a condition of the power tool responsive to the power tool signaling the condition to the light emitting assembly.

Abstract: An analog-to-digital converter includes a first converter stage comprising a successive-approximation-register (SAR) analog-to-digital converter (ADC), the SAR ADC being configured for voltage domain quantization, a second converter stage coupled to the first converter stage to quantize residual voltages of the voltage domain quantization, the second converter stage including a ring time-to-digital converter (TDC), and a third converter stage comprising an interpolation TDC, the interpolation TDC being coupled to the second converter stage to provide further time domain quantization.

Abstract: Atomic layer etching of a substrate using a wafer scale wave of precisely controlled electrons is presented. A volume of gaseous plasma including diluent and reactive species and electrons of a uniform steady state composition is generated in a positive column of a DC plasma proximate the substrate. A corrosion layer is formed on the substrate by adsorption of the reactive species to atoms at the surface of the substrate. The substrate is positively biased to draw electrons from the volume to the surface of the substrate and impart an energy to the electrons so to stimulate electron transitions in the corrosion layer species, resulting in ejection of the corrosion layer species via electron stimulation desorption (ESD). The substrate is negatively biased to repel the electrons from the surface of the substrate back to the volume, followed by a zero bias to restore the steady state composition of the volume.

Abstract: An analog-to-digital converter includes a first converter stage, a second converter stage coupled to the first converter stage to quantize a residue signal of the first converter stage, and an inter-stage converter disposed between the first and second converter stages. The inter-stage converter is configured to convert between a first domain and a second domain. The inter-stage converter is configured to process the residue signal of the first converter stage such that a range of the residue signal matches a full scale of the second converter stage.

Abstract: A metal oxide nanoparticle comprises a metal oxide core of formula M2O5, wherein M is tantalum (V) or niobium (V) and alkylsiloxane ligands bonded to the metal oxide core.

Abstract: Systems and methods for material processing using wafer scale waves of precisely controlled electrons in a DC plasma is presented. A surface floating potential of a substrate placed atop a stage in a positive column of the DC plasma is adjusted and maintained to a reference potential. A periodic biasing signal referenced to the reference potential is capacitively coupled to the stage to control a surface potential at the substrate according to: an active phase for provision of kinetic energy to free electrons in the DC plasma for activation of targeted bonds at the surface of the substrate; a neutralization phase for repelling of the free electrons from the surface of the substrate; and an initialization phase for restoring an initial condition of the surface floating potential.

Abstract: Systems and methods for material processing using wafer scale waves of precisely controlled electrons in a DC plasma is presented. The anode and cathode of a DC plasma chamber are respectively connected to an adjustable DC voltage source and a DC current source. The anode potential is adjusted to shift a surface floating potential of a stage in a positive column of the DC plasma to a reference ground potential of the DC voltage/current sources. A conductive plate in a same region of the positive column opposite the stage is used to measure the surface floating potential of the stage. A control loop can be activated throughout various processing steps to maintain the surface floating potential of the stage to the reference ground potential. A signal generator referenced to the ground potential is capacitively coupled to the stage to control a surface potential at the stage for provision of kinetic energy to free electrons in the DC plasma.

Abstract: A metal oxide nanoparticle comprises a metal oxide core of formula M2O5, wherein M is tantalum (V) or niobium (V) and alkylsiloxane ligands bonded to the metal oxide core. The alkylsiloxane ligands are selected from the group consisting of isobutylsiloxane, allylsiloxane, vinylsiloxane, n-propyl siloxane, n-butylsiloxane, sec-butyl siloxane, tert-butyl siloxane, phenylsiloxane, n-octylsiloxane, isooctylsiloxane n-dodecyl siloxane, 4 -(trimethyl silyl)phenylsiloxane, para-tolylsiloxane, 4-fluorophenyl siloxane, 4 -chlorophenyl siloxane, 4-bromophenyl siloxane, 4-iodophenylsiloxane, 4-cyanophenyl siloxane, benzylsiloxane, methylsiloxane, ethylsiloxane, 4-(trifluoromethyl)phenylsiloxane, 4 -ammoniumbutylsiloxane, and any combination thereof.

Abstract: Systems and methods for material processing using wafer scale waves of precisely controlled electrons in a DC plasma is presented. A surface floating potential of a substrate placed atop a stage in a positive column of the DC plasma is adjusted and maintained to a reference potential. A periodic biasing signal referenced to the reference potential is capacitively coupled to the stage to control a surface potential at the substrate according to: an active phase for provision of kinetic energy to free electrons in the DC plasma for activation of targeted bonds at the surface of the substrate; a neutralization phase for repelling of the free electrons from the surface of the substrate; and an initialization phase for restoring an initial condition of the surface floating potential.

Abstract: Systems and methods for material processing using wafer scale waves of precisely controlled electrons in a DC plasma is presented. The anode and cathode of a DC plasma chamber are respectively connected to an adjustable DC voltage source and a DC current source. The anode potential is adjusted to shift a surface floating potential of a stage in a positive column of the DC plasma to a reference ground potential of the DC voltage/current sources. A conductive plate in a same region of the positive column opposite the stage is used to measure the surface floating potential of the stage. A signal generator referenced to the ground potential is capacitively coupled to the stage to control a surface potential at the stage for provision of kinetic energy to free electrons in the DC plasma.

Abstract: Systems and methods for material processing using wafer scale waves of precisely controlled electrons in a DC plasma is presented. The anode and cathode of a DC plasma chamber are respectively connected to an adjustable DC voltage source and a DC current source. The anode potential is adjusted to shift a surface floating potential of a stage in a positive column of the DC plasma to a reference ground potential of the DC voltage/current sources. A control loop can be activated throughout various processing steps to maintain the surface floating potential of the stage to the reference ground potential. A signal generator referenced to the ground potential is capacitively coupled to the stage to control a surface potential at the stage for provision of kinetic energy to free electrons in the DC plasma.

Abstract: Systems and methods for material processing using wafer scale waves of precisely controlled electrons in a DC plasma is presented. The anode and cathode of a DC plasma chamber are respectively connected to an adjustable DC voltage source and a DC current source. The anode potential is adjusted to shift a surface floating potential of a stage in a positive column of the DC plasma to a reference ground potential of the DC voltage/current sources. A control loop can be activated throughout various processing steps to maintain the surface floating potential of the stage to the reference ground potential. A signal generator referenced to the ground potential is capacitively coupled to the stage to control a surface potential at the stage for provision of kinetic energy to free electrons in the DC plasma.