Abstract: A method for measurement of misregistration in the manufacture of semiconductor device wafers, the method including measuring misregistration between layers of a semiconductor device wafer at a first instance and providing a first misregistration indication, measuring misregistration between layers of a semiconductor device wafer at a second instance and providing a second misregistration indication, providing a misregistration measurement difference output in response to a difference between the first misregistration indication and the second misregistration indication, providing a baseline difference output and ameliorating the difference between the misregistration measurement difference output and the baseline difference output.

Abstract: A method for measurement of misregistration in the manufacture of semiconductor device wafers, the method including measuring misregistration between layers of a semiconductor device wafer at a first instance and providing a first misregistration indication, measuring misregistration between layers of a semiconductor device wafer at a second instance and providing a second misregistration indication, providing a misregistration measurement difference output in response to a difference between the first misregistration indication and the second misregistration indication, providing a baseline difference output and ameliorating the difference between the misregistration measurement difference output and the baseline difference output.

Abstract: A method for process control in the manufacture of semiconductor devices including performing metrology on at least one semiconductor wafer included in a given lot of semiconductor wafers, following processing of the at least one semiconductor wafer by a first processing step, generating, based on the metrology, at least one correctable to a second processing step subsequent to the processing step and adjusting, based on the correctable, performance of the second processing step on at least some semiconductor waters of the given lot of semiconductor wafers.

Abstract: A method includes retrieving from a memory a stored sensitivity table that associates magnetic position sensor readings with measured magnetic fields. One or more calibration values for the magnetic position sensor are estimated during a catheterization procedure in which a magnetic position sensor, fitted at a distal end of a catheter, is placed in an organ of a patient, based on (i) the stored sensitivity table and (ii) readings acquired by the magnetic position sensor while in the organ. Based on the one or more calibration values, a location of the distal end in the organ is magnetically tracked.

Abstract: A method for measurement of misregistration in the manufacture of semiconductor device wafers, the method including measuring misregistration between layers of a semiconductor device wafer at a first instance and providing a first misregistration indication, measuring misregistration between layers of a semiconductor device wafer at a second instance and providing a second misregistration indication, providing a misregistration measurement difference output in response to a difference between the first misregistration indication and the second misregistration indication, providing a baseline difference output and ameliorating the difference between the misregistration measurement difference output and the baseline difference output.

Abstract: A gap between a plurality of ablation sites in a heart that hinders electrical propagation therethrough is found by projecting the locations of the sites in a 3-dimensional coordinate system onto a simulation plane, identifying a set of shortest 3-dimensional paths that correspond to 2-dimensional connections between pairs of the projected locations of the sites, and reporting a gap as a longest one of the set.

Abstract: A method includes retrieving from a memory a stored sensitivity table that associates magnetic position sensor readings with measured magnetic fields. One or more calibration values for the magnetic position sensor are estimated during a catheterization procedure in which a magnetic position sensor, fitted at a distal end of a catheter, is placed in an organ of a patient, based on (i) the stored sensitivity table and (ii) readings acquired by the magnetic position sensor while in the organ. Based on the one or more calibration values, a location of the distal end in the organ is magnetically tracked.

Abstract: A gap between a plurality of ablation sites in a heart that hinders electrical propagation therethrough is found by projecting the locations of the sites in a 3-dimensional coordinate system onto a simulation plane, identifying a set of shortest 3-dimensional paths that correspond to 2-dimensional connections between pairs of the projected locations of the sites, and reporting a gap as a longest one of the set.

Abstract: A gap between a plurality of ablation sites in a heart that hinders electrical propagation therethrough is found by projecting the locations of the sites in a 3-dimensional coordinate system onto a simulation plane, identifying a set of shortest 3-dimensional paths that correspond to 2-dimensional connections between pairs of the projected locations of the sites, and reporting a gap as a longest one of the set.