Patents by Inventor David J. Chazan

David J. Chazan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120232419
    Abstract: A high-sensitivity analyzer for nitric oxide in exhaled breath at levels of 200 ppb or less with a sensor containing cytochrome C is rendered capable of multiple uses without the need for installing a new sensor for each use. This capability is achieved by regenerating the analyzer after each use by purging the sensor and surrounding regions with NOx -free air in a controlled manner, preferably in pulses separated by equilibration periods.
    Type: Application
    Filed: May 24, 2012
    Publication date: September 13, 2012
    Applicant: AEROCRINE AB
    Inventors: David J Chazan, Bhairavi R Parikh, Bryan P Flaherty, David J Anvar, Brian A Awabdy
  • Patent number: 8206311
    Abstract: A high-sensitivity analyzer for nitric oxide in exhaled breath at levels of 200 ppb or less with a sensor containing cytochrome C is rendered capable of multiple uses without the need for installing a new sensor for each use. This capability is achieved by regenerating the analyzer after each use by purging the sensor and surrounding regions with NOx-free air in a controlled manner, preferably in pulses separated by equilibration periods.
    Type: Grant
    Filed: April 1, 2009
    Date of Patent: June 26, 2012
    Assignee: Aerocrine AB
    Inventors: David J. Chazan, Bhairavi R. Parikh, Bryan P. Flaherty, David J. Anvar, Brian A. Awabdy
  • Publication number: 20100256514
    Abstract: A high-sensitivity analyzer for nitric oxide in exhaled breath at levels of 200 ppb or less with a sensor containing cytochrome C is rendered capable of multiple uses without the need for installing a new sensor for each use. This capability is achieved by regenerating the analyzer after each use by purging the sensor and surrounding regions with NOx-free air in a controlled manner, preferably in pulses separated by equilibration periods.
    Type: Application
    Filed: April 1, 2009
    Publication date: October 7, 2010
    Applicant: APIERON INC.
    Inventors: David J. Chazan, Bhairavi R. Parikh, Bryan P. Flaherty, David J. Anvar, Brian A. Awabdy
  • Patent number: 7611671
    Abstract: Highly sensitive devices for detecting nitric oxide and/or other gaseous analytes in gaseous samples are improved by the incorporation of a carbon monoxide scavenger in the interior of the device or in the device packaging. The release of carbon monoxide within the housing of the device by the plastic used in the construction of the housing or by anything within the device that releases carbon monoxide causes a loss in sensitivity due to competition between the carbon monoxide and the nitric oxide for the binding sites on the device sensor. The scavenger corrects this by either catalyzing the oxidation of carbon monoxide to the less competitive carbon dioxide or immobilizing the carbon monoxide by affinity-type or covalent binding. Analogous effects are achieved for analytes other than nitric oxide but that likewise encounter interference from carbon monoxide in binding to sensors.
    Type: Grant
    Filed: October 14, 2005
    Date of Patent: November 3, 2009
    Assignee: Aperon Biosystems Corp.
    Inventors: David J. Anvar, David J. Chazan, Bryan P. Flaherty, Bhairavi R. Parikh
  • Patent number: 7278291
    Abstract: The degradation over time that is commonly seen with analyte-binding proteins when used as sensors for trace amounts of an analyte in a gaseous mixture is reduced by maintaining the sensor in a low-oxygen or oxygen-free environment.
    Type: Grant
    Filed: February 6, 2006
    Date of Patent: October 9, 2007
    Assignee: Apieron Biosystems Corp.
    Inventors: David J. Chazan, David J. Anvar, Autumn Talbott
  • Patent number: 6323435
    Abstract: Low-impedance high density deposited-on-laminate (DONL) structures having reduced stress features reducing metallization present on the laminate printed circuit board. In this manner, reduced is the force per unit area exerted on the dielectric material disposed adjacent to the laminate material that is typically present during thermal cycling of the structure.
    Type: Grant
    Filed: July 29, 1999
    Date of Patent: November 27, 2001
    Assignee: Kulicke & Soffa Holdings, Inc.
    Inventors: Jan I. Strandberg, David J. Chazan, Michael P. Skinner
  • Patent number: 6262579
    Abstract: A method for testing for open circuits on a common circuit base having pads for making electrical contact to the common circuit base on both the top and bottom of the circuit base. The common circuit base includes a thin film metal interconnect structure formed on its upper surface and the thin film interconnect structure including an upper dielectric layer deposited over a thin film metalization layer that has contact openings etched through the dielectric layer at selected locations for the formation of contact pads.
    Type: Grant
    Filed: November 13, 1998
    Date of Patent: July 17, 2001
    Assignee: Kulicke & Soffa Holdings, Inc.
    Inventors: David J. Chazan, James L. Lykins
  • Patent number: 6165892
    Abstract: A method for forming a planarized thin film dielectric film on a surface of a common circuit base upon which one or more integrated circuits are to be attached. The common circuit base includes raised features formed over its surface such that the raised features define a trench area between them. The method includes the steps of forming a first layer of the dielectric film over the common circuit base and over the raised features and the trench, then patterning the newly formed layer to remove portions of the layer formed over the raised features and expose the raised features. After the layer is patterned, formation of the dielectric film is completed by forming a second layer of the dielectric film over the patterned first layer.
    Type: Grant
    Filed: July 31, 1998
    Date of Patent: December 26, 2000
    Assignee: Kulicke & Soffa Holdings, Inc.
    Inventors: David J. Chazan, Ted T. Chen, Todd S. Kaplan, James L. Lykins, Michael P. Skinner, Jan I. Strandberg
  • Patent number: 5214000
    Abstract: Thermal post vias are formed within a formed multi-layer, high density interconnect including a base and plural layers of metal conductors separated by dielectric material by the steps of:removing in a single step dielectric material at predetermined sites of the thermal post vias to define substantially cylindrical post holes, andforming the thermal post vias by emplacing conductor material, such as metal, into the post holes so that the material fully occupies and fills up the holes.
    Type: Grant
    Filed: December 19, 1991
    Date of Patent: May 25, 1993
    Assignee: Raychem Corporation
    Inventors: David J. Chazan, Gary R. Weihe, Richard F. Otte