Abstract: A parallel plate plasma type etching apparatus is provided with a temperature control chuck 44 so that elevated substrate temperatures are controlled. With an elevated substrate temperature, the reaction rate is increased. With positive temperature control, the likelihood of damage to the semiconductor devices is significantly reduced. The chuck is provided with a large number of equally spaced electrical heaters 72 and control of the heaters is by a temperature sensor 74.

Abstract: A parallel plate plasma reactor is disclosed in which the lower electrode comprises a metal electrode having a central pedestal and an insert for surrounding the pedestal and holding wafers in contact with the pedestal or in position above the pedestal. The insert can comprise an insulator, such as ceramic, or a metal.

Abstract: An improved pin lift mechanism for plasma processing of semiconductor wafers is disclosed in which the pins are each contained in a non-magnetic tube which is sealed to the wafer chuck. A magnetic slug in each tube couples external motion of a magnet to the pin.

Abstract: A gas inlet having a non-uniform array of inlet holes for the non-uniform introduction of an etching gas into a reaction chamber of a dry etching apparatus. The non-uniform introduction of gas compensates for non-uniform characteristics in the dry etching apparatus resulting in a uniform etch.

Abstract: Two emitters, producing light at different wavelengths, and a single receiver provide an optical sensor useful for detecting the presence or position of objects having surfaces which do not totally reflect incident light.

Abstract: A plasma reactor apparatus is disclosed in which plates having channels are used to redistribute gas uniformly over the surface of a wafer being processed in the reactor. Slot means adjacent the plates provide a final baffle to prevent jetstreams in the gas from impinging directly on the wafer.

Abstract: A proximity detecting apparatus for generating a beam of infrared light rays in the form of successive radiation pulses occuring at a predetermined frequency for reflection off objects moving within the proximity of the apparatus. A photo-detector device positioned adjacent to the radiation beam senses the reflected rays and responsively produces an output signal. Other light radiation and electrical signal noise sensed by the detector are filtered from the output signal according to the pulse width and frequency of pulse radiation generated by the beam. A detected signal is established as valid only if the signal and the infrared source are in frequency synchronization and if an unbroken pulse train is detected for a predetermined length of time.