Abstract: Zero-ascend omnispecies (ZAO) attraction system includes a fish passage attraction module that can be deployed in a fishway where water flows downstream. The fish passage attraction module includes a body having a first end and an opposite second end, first adaptor adjacent the first end and second adaptor adjacent the second end. The adaptors are configured to alter water flow fields downstream of the module so as to attract fish to an entrance thereof.

Abstract: Zero-ascend omnispecies (ZAO) attraction system includes a fish passage attraction module that can be deployed in a fishway where water flows downstream. The fish passage attraction module includes a body having a first end and an opposite second end, first adaptor adjacent the first end and second adaptor adjacent the second end. The adaptors are configured to alter water flow fields downstream of the module so as to attract fish to an entrance thereof.

Abstract: A hydropower system comprised of prefabricated modules. The system includes an assembly having a first plurality of modules forming a first vertical stack and a second plurality of modules forming a second vertical stack. Each of the vertical stacks also includes at least one of: a first plurality of horizontal seals between the first plurality of modules, and a second plurality of horizontal seals between the second plurality of modules. Each of the vertical stacks further includes a plurality of vertical seals installed between the first plurality of modules and the second plurality of modules.

Abstract: A fish passage system having flexible textile materials forming a conduit to transport fish across river barriers encountered during migration. The system can include modular support structures that can be independently secured to riverbeds to form conduit supports, dams, hydropower structures, and the like.

Abstract: Zero-ascend omnispecies (ZAO) attraction system includes a fish passage attraction module that can be deployed in a fishway where water flows downstream. The fish passage attraction module includes a body having a first end and an opposite second end, first adaptor adjacent the first end and second adaptor adjacent the second end. The adaptors are configured to alter water flow fields downstream of the module so as to attract fish to an entrance thereof.

Abstract: Systems and method for a hydrokinetic energy device. A hydrokinetic energy device includes a main body including two main wing-shaped spars mounted upon a rotating central hub, and rotatable spar tip turbines mounted at or near an end of each of the main wing-shaped spars, the main wing-shaped spars driving the rotatable spar tip turbines through water, each of the rotatable spar tip turbines including a direct-drive generator and power conversion system that transfers power from a rotating rotatable spar tip turbine to the central hub where the voltage is stepped up and amperage is reduced.

Abstract: Systems and method for a hydrokinetic energy device. A hydrokinetic energy device includes a main body including two main wing-shaped spars mounted upon a rotating central hub, and rotatable spar tip turbines mounted at or near an end of each of the main wing-shaped spars, the main wing-shaped spars driving the rotatable spar tip turbines through water, each of the rotatable spar tip turbines including a direct-drive generator and power conversion system that transfers power from a rotating rotatable spar tip turbine to the central hub where the voltage is stepped up and amperage is reduced.

Abstract: A fish passage system having flexible textile materials forming a conduit to transport fish across river barriers encountered during migration. The system can include modular support structures that can be independently secured to riverbeds to form conduit supports, dams, hydropower structures, and the like.

Abstract: Systems and method for a hydrokinetic energy device. A hydrokinetic energy device includes a main body including two main wing-shaped spars mounted upon a rotating central hub, and rotatable spar tip turbines mounted at or near an end of each of the main wing-shaped spars, the main wing-shaped spars driving the rotatable spar tip turbines through water, each of the rotatable spar tip turbines including a direct-drive generator and power conversion system that transfers power from a rotating rotatable spar tip turbine to the central hub where the voltage is stepped up and amperage is reduced.

Abstract: One aspect is directed to an improved method for polishing an integrated circuit. According to one aspect, metal features deposited on an integrated circuit are polished using electropolishing techniques. Because electropolishing is used, polishing avoids removal of softer insulating materials of the integrated circuit.

Abstract: One aspect is directed to an improved method for polishing an integrated circuit. According to one aspect, metal features deposited on an integrated circuit are polished using electropolishing techniques. Because electropolishing is used, polishing avoids removal of softer insulating materials of the integrated circuit.

Abstract: A metallized structure for use in a microelectronic circuit is set forth. The metallized structure comprises a dielectric layer, an ultra-thin film bonding layer disposed exterior to the dielectric layer, and a low-Me concentration, copper-Me alloy layer disposed exterior to the ultra-thin film bonding layer. The Me is a metal other than copper and, preferably, is zinc. The concentration of the Me is less than about 5 atomic percent, preferably less than about 2 atomic percent, and even more preferably, less than about 1 atomic percent. In a preferred embodiment of the metallized structure, the dielectric layer, ultra-thin film bonding layer and the copper-Me alloy layer are all disposed immediately adjacent one another. If desired, a primary conductor, such as a film of copper, may be formed exterior to the foregoing layer sequence. The present invention also contemplates methods for forming the foregoing structure as well as electroplating baths that may be used to deposit the copper-Me alloy layer.

Abstract: A metallized structure for use in a microelectronic circuit is set forth. The metallized structure comprises a dielectric layer, an ultra-thin film bonding layer disposed exterior to the dielectric layer, and a low-Me concentration, copper-Me alloy layer disposed exterior to the ultra-thin film bonding layer. The Me is a metal other than copper and, preferably, is zinc. The concentration of the Me is less than about 5 atomic percent, preferably less than about 2 atomic percent, and even more preferably, less than about 1 atomic percent. In a preferred embodiment of the metallized structure, the dielectric layer, ultra-thin film bonding layer and the copper-Me alloy layer are all disposed immediately adjacent one another. If desired, a primary conductor, such as a film of copper, may be formed exterior to the foregoing layer sequence. The present invention also contemplates methods for forming the foregoing structure as well as electroplating baths that may be used to deposit the copper-Me alloy layer.

Abstract: A metallized structure for use in a microelectronic circuit is set forth. The metallized structure comprises a dielectric layer, an ultra-thin film bonding layer disposed exterior to the dielectric layer, and a low-Me concentration, copper-Me alloy layer disposed exterior to the ultra-thin film bonding layer. The Me is a metal other than copper and, preferably, is zinc. The concentration of the Me is less than about 5 atomic percent, preferably less than about 2 atomic percent, and even more preferably, less than about 1 atomic percent. In a preferred embodiment of the metallized structure, the dielectric layer, ultra-thin film bonding layer and the copper-Me alloy layer are all disposed immediately adjacent one another. If desired, a primary conductor, such as a film of copper, may be formed exterior to the foregoing layer sequence. The present invention also contemplates methods for forming the foregoing structure as well as electroplating baths that may be used to deposit the copper-Me alloy layer.

Abstract: A metallized structure for use in a microelectronic circuit is set forth. The metallized structure comprises a dielectric layer, an ultra-thin film bonding layer disposed exterior to the dielectric layer, and a low-Me concentration, copper-Me alloy layer disposed exterior to the ultra-thin film bonding layer. The Me is a metal other than copper and, preferably, is zinc. The concentration of the Me is less than about 5 atomic percent, preferably less than about 2 atomic percent, and even more preferably, less than about 1 atomic percent. In a preferred embodiment of the metallized structure, the dielectric layer, ultra-thin film bonding layer and the copper-Me alloy layer are all disposed immediately adjacent one another. If desired, a primary conductor, such as a film of copper, may be formed exterior to the foregoing layer sequence. The present invention also contemplates methods for forming the foregoing structure as well as electroplating baths that may be used to deposit the copper-Me alloy layer.

Abstract: An intumescent material includes a liquid carrier with a corrosion inhibitor, such as a coating forming material, expandable particulate graphite (flake graphite or lump graphite) and if desired a filler. The intumescent material has a pH greater than 7.0, to reduce the corrosive properties of the intumescent material for most metals used in the construction industry and to provide a chemical environment conducive to the forming of a corrosion inhibiting layer by the corrosion inhibitor. The method of making the intumescent material includes combining the liquid carrier, the corrosion inhibitor, the expandable particulate graphite, the filler (if used), and a pH enhancer (if necessary to bring the intumescent material within the desired pH range), to form an intumescent material having a pH greater than 7.0.

Abstract: A system for performing chemical mechanical planarization for a semiconductor wafer includes a chemical mechanical polishing system including a chemical mechanical polishing slurry. The system also includes a device for measuring the electrochemical potential of the slurry during processing which is electrically connected to the slurry, and a device for detecting the end point of the process, based upon the electrochemical potential of the slurry, which is responsive to the electrochemical potential measuring device. Accurate in situ control of a chemical mechanical polishing process is thereby provided.