Abstract: A surgical navigation method utilizing a computer system. The method includes the steps of: (a) fixing a camera relative to a surgical site on a patient such that the camera does not move relative to the surgical site; (b) restraining the body portion of the patient which includes the surgical site relative to an operating table supporting the patient, such that the body portion does not move relative to the operating table; and (c) detecting with the camera the position of a medical instrument having a tracker array.

Abstract: Among other things, the present disclosure relates to designed oligonucleotides, compositions, and methods thereof. In some embodiments, provided oligonucleotide compositions provide altered splicing of a transcript. In some embodiments, provided oligonucleotide compositions have low toxicity. In some embodiments, provided oligonucleotide compositions provide improved protein binding profiles. In some embodiments, provided oligonucleotide compositions have improved delivery. In some embodiments, provided oligonucleotide compositions have improved uptake. In some embodiments, the present disclosure provides methods for treatment of diseases using provided oligonucleotide compositions.

Abstract: A racing coach device stores data representative of a first path of travel along a racetrack over a first time period and data representative of a second path of travel along the racetrack over a second time period. The racing coach device identifies, for each of a plurality of geolocations along the racetrack, a segment traversed along the first path of travel over which a speed reduction event occurred in the generated video data. The device determines an obstructed portion of the first time period over which the traversed segment along the first path of travel was extended in duration by the speed reduction event. The device determines an average lap time for the first path of travel and the second path of travel based on the obstructed portion of the first time period and controls an output device to provide the determined average lap time.

Abstract: A racing coach device stores a first path of travel along a racetrack over a first time period and a second path of travel along the racetrack over a second time period. The racing coach device identifies, for each of a plurality of geolocations along the racetrack, one of the first path of travel or the second path of travel that is associated with a shorter duration of time over which the user traversed a segment of the path of travel associated with each of the plurality of geolocations. The device determines an optimal path of travel along the racetrack based on the identified first and second path of travel for each segment of the path of travel at each of the plurality of geolocations that results in a calculated lap time to traverse the racetrack that is less than the first time period and the second time period.

Abstract: A racing coach device stores an optimal path of travel along a racetrack, the optimal path of travel formed of a plurality of segments and associated with a plurality of driving maneuvers. A location determining component configured to receive a location signal and determine a current geolocation of the racing coach device using the location signal. The racing coach device determines, based on the current geolocation of an automobile, a next driving maneuver along the plurality of driving maneuvers and a geolocation associated with the next driving maneuver. The device controls a speaker to provide audible driving instructions based on the determined next driving maneuver along the optimal path of travel before the racing coach device arrives at the geolocation associated with the next driving maneuver.

Abstract: A racing coach device stores a first path of travel along a racetrack over a first time period and a second path of travel along the racetrack over a second time period. The racing coach device identifies, for each of a plurality of geolocations along the racetrack, one of the first path of travel or the second path of travel that is associated with a shorter duration of time over which the user traversed a segment of the path of travel associated with each of the plurality of geolocations. The device determines an optimal path of travel along the racetrack based on the identified first and second path of travel for each segment of the path of travel at each of the plurality of geolocations that results in a calculated lap time to traverse the racetrack that is less than the first time period and the second time period.

Abstract: A racing coach device stores a first path of travel along a racetrack over a first time period and a second path of travel along the racetrack over a second time period. The racing coach device identifies, for each of a plurality of geolocations along the racetrack, one of the first path of travel or the second path of travel that is associated with a shorter duration of time over which the user traversed a segment of the path of travel associated with each of the plurality of geolocations. The device determines an optimal path of travel along the racetrack based on the identified first and second path of travel for each segment of the path of travel at each of the plurality of geolocations that results in a calculated lap time to traverse the racetrack that is less than the first time period and the second time period.

Abstract: A racing coach device stores a first path of travel along a racetrack over a first time period and a second path of travel along the racetrack over a second time period. The racing coach device identifies, for each of a plurality of geolocations along the racetrack, one of the first path of travel or the second path of travel that is associated with a shorter duration of time over which the user traversed a segment of thepath of travel associated with each of the plurality of geolocations. The device determines an optimal path of travel along the racetrack based on the identified first and second path of travel for each segment of the path of travel at each of the plurality of geolocations that results in a calculated lap time to traverse the racetrack that is less than the first time period and the second time period.

Abstract: A quantum mechanical radio frequency (RF) signaling system includes a transmission line that receives and conducts an RF pulse signal operating at a radio frequency, a first qubit having a quantum mechanical state that is a linear combination of at least two quantum mechanical eigenstates, and a first network of reactive electrical components having an input that is coupled to the transmission line for receiving the RF pulse signal and an output that is coupled to the first qubit. The first network of reactive electrical components attenuates the amplitude of the RF pulse signal and produces a first attenuated RF pulse signal that is applied to the first qubit. The first attenuated RF pulse signal operates at the radio frequency and has a first attenuated amplitude that causes a predefined change in the linear combination of at least two quantum mechanical eigenstates within the first qubit.

Abstract: A racing coach device stores a first path of travel along a racetrack over a first time period and a second path of travel along the racetrack over a second time period. The racing coach device identifies, for each of a plurality of geolocations along the racetrack, one of the first path of travel or the second path of travel that is associated with a shorter duration of time over which the user traversed a segment of the path of travel associated with each of the plurality of geolocations. The device determines an optimal path of travel along the racetrack based on the identified first and second path of travel for each segment of the path of travel at each of the plurality of geolocations that results in a calculated lap time to traverse the racetrack that is less than the first time period and the second time period.

Abstract: A field-effect transistor includes a semiconductor substrate having first, second, third, and fourth sides, and a ferroelectric gate stack on an upper surface of the substrate. The ferroelectric gate stack includes a gate insulating layer; and a ferroelectric material layer on the gate insulating layer. Portions of the upper surface of the substrate between the first side and the ferroelectric gate stack and between the second side and the ferroelectric gate stack are doped with n-type impurities, and portions of the upper surface of the substrate between the third side and the ferroelectric gate stack and between the fourth side and the ferroelectric gate stack are doped with p-type impurities. A presence of both n and p channels in a same region increases a capacitance and voltage gain of the ferroelectric gate stack.

Abstract: A field-effect transistor includes a semiconductor substrate having first, second, third, and fourth sides, and a ferroelectric gate stack on an upper surface of the substrate. The ferroelectric gate stack includes a gate insulating layer; and a ferroelectric material layer on the gate insulating layer. Portions of the upper surface of the substrate between the first side and the ferroelectric gate stack and between the second side and the ferroelectric gate stack are doped with n-type impurities, and portions of the upper surface of the substrate between the third side and the ferroelectric gate stack and between the fourth side and the ferroelectric gate stack are doped with p-type impurities. A presence of both n and p channels in a same region increases a capacitance and voltage gain of the ferroelectric gate stack.

Abstract: A field-effect transistor includes a semiconductor substrate having first, second, third, and fourth sides, and a ferroelectric gate stack on an upper surface of the substrate. The ferroelectric gate stack includes a gate insulating layer; and a ferroelectric material layer on the gate insulating layer. Portions of the upper surface of the substrate between the first side and the ferroelectric gate stack and between the second side and the ferroelectric gate stack are doped with n-type impurities, and portions of the upper surface of the substrate between the third side and the ferroelectric gate stack and between the fourth side and the ferroelectric gate stack are doped with p-type impurities. A presence of both n and p channels in a same region increases a capacitance and voltage gain of the ferroelectric gate stack.

Abstract: A field-effect transistor includes a semiconductor substrate having first, second, third, and fourth sides, and a ferroelectric gate stack on an upper surface of the substrate. The ferroelectric gate stack includes a gate insulating layer; and a ferroelectric material layer on the gate insulating layer. Portions of the upper surface of the substrate between the first side and the ferroelectric gate stack and between the second side and the ferroelectric gate stack are doped with n-type impurities, and portions of the upper surface of the substrate between the third side and the ferroelectric gate stack and between the fourth side and the ferroelectric gate stack are doped with p-type impurities. A presence of both n and p channels in a same region increases a capacitance and voltage gain of the ferroelectric gate stack.

Abstract: A quantum mechanical radio frequency (RF) signaling system includes a transmission line that receives and conducts an RF pulse signal operating at a radio frequency, a first qubit having a quantum mechanical state that is a linear combination of at least two quantum mechanical eigenstates, and a first network of reactive electrical components having an input that is coupled to the transmission line for receiving the RF pulse signal and an output that is coupled to the first qubit. The first network of reactive electrical components attenuates the amplitude of the RF pulse signal and produces a first attenuated RF pulse signal that is applied to the first qubit. The first attenuated RF pulse signal operates at the radio frequency and has a first attenuated amplitude that causes a predefined change in the linear combination of at least two quantum mechanical eigenstates within the first qubit.

Abstract: A quantum mechanical radio frequency (RF) signaling system includes a transmission line that receives and conducts an RF pulse signal operating at a radio frequency, a first qubit having a quantum mechanical state that is a linear combination of at least two quantum mechanical eigenstates, and a first network of reactive electrical components having an input that is coupled to the transmission line for receiving the RF pulse signal and an output that is coupled to the first qubit. The first network of reactive electrical components attenuates the amplitude of the RF pulse signal and produces a first attenuated RF pulse signal that is applied to the first qubit. The first attenuated RF pulse signal operates at the radio frequency and has a first attenuated amplitude that causes a predefined change in the linear combination of at least two quantum mechanical eigenstates within the first qubit.

Abstract: A quantum mechanical radio frequency (RF) signaling system includes a transmission line that receives and conducts an RF pulse signal operating at a radio frequency, a first qubit having a quantum mechanical state that is a linear combination of at least two quantum mechanical eigenstates, and a first network of reactive electrical components having an input that is coupled to the transmission line for receiving the RF pulse signal and an output that is coupled to the first qubit. The first network of reactive electrical components attenuates the amplitude of the RF pulse signal and produces a first attenuated RF pulse signal that is applied to the first qubit. The first attenuated RF pulse signal operates at the radio frequency and has a first attenuated amplitude that causes a predefined change in the linear combination of at least two quantum mechanical eigenstates within the first qubit.

Abstract: A quantum mechanical radio frequency (RF) signaling system includes a transmission line that receives and conducts an RF pulse signal operating at a radio frequency, a first qubit having a quantum mechanical state that is a linear combination of at least two quantum mechanical eigenstates, and a first network of reactive electrical components having an input that is coupled to the transmission line for receiving the RF pulse signal and an output that is coupled to the first qubit. The first network of reactive electrical components attenuates the amplitude of the RF pulse signal and produces a first attenuated RF pulse signal that is applied to the first qubit. The first attenuated RF pulse signal operates at the radio frequency and has a first attenuated amplitude that causes a predefined change in the linear combination of at least two quantum mechanical eigenstates within the first qubit.

Abstract: A quantum mechanical radio frequency (RF) signaling system includes a transmission line that receives and conducts an RF pulse signal operating at a radio frequency, a first qubit having a quantum mechanical state that is a linear combination of at least two quantum mechanical eigenstates, and a first network of reactive electrical components having an input that is coupled to the transmission line for receiving the RF pulse signal and an output that is coupled to the first qubit. The first network of reactive electrical components attenuates the amplitude of the RF pulse signal and produces a first attenuated RF pulse signal that is applied to the first qubit. The first attenuated RF pulse signal operates at the radio frequency and has a first attenuated amplitude that causes a predefined change in the linear combination of at least two quantum mechanical eigenstates within the first qubit.

Abstract: A semiconductor device having a reduced variation in threshold voltage includes a semiconductor substrate with a high dielectric-constant (high-k) layer deposited in a gate trench and on a semiconductor portion of the substrate. At least one workfunction layer has an arrangement of first and second workfunction granular portions on an upper surface of the high-k layer to define a workfunction of the semiconductor device. The arrangement of first and second workfunction granular portions define a granularity of the at least one workfunction layer. A gate contact material fills the gate trench, wherein the high-k layer has a concentration of oxygen vacancies based on the granularity of the at least one work function metal layer so as to reduce the variation in the threshold voltage.