Patents by Inventor David J. Hannaman

David J. Hannaman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Structure and method for elimination of process-related defects in poly/metal plate capacitors
    Publication number: 20090250784
    Abstract: An integrated circuit includes silicon layer (2) supported by a bottom oxide layer (3), a shallow trench oxide (4) in the shallow trench (30), and a polycrystalline silicon layer (5) on the shallow trench oxide. A deep trench oxide (25) extending from the shallow trench oxide to the bottom oxide layer electrically isolates a section (2A) of the silicon layer to prevent a silicon cone defect (22) on the silicon layer (2) from causing short-circuiting of the polycrystalline silicon layer (5) to a non-isolated section of the silicon layer. The polycrystalline silicon layer (5) can form a bottom plate of a poly/metal capacitor (20) and can also form a poly interconnect conductor (5A).
    Type: Application
    Filed: June 2, 2008
    Publication date: October 8, 2009
    Inventors: Walter B. Meinel, Henry Surtihadi, Philipp Steinmann, David J. Hannaman