Patents by Inventor David J. Hutson

David J. Hutson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5057773
    Abstract: An E-beam testing system uses the E-beam to test a sample with conductive elements thereon. The system charges conductive elements on the sample. Above the sample and parallel to its upper surface is a stacked pair of parallel extraction grids. One grid is biased positively to accelerate secondary electrons emitted from the sample. The other grid is biased at a voltage to control the angular distribution of secondary electrons passing through the grid. Rectangular double grid sets, tilted with respect to the beam and the sample, are located above and laterally of the sample and the E-beam. Those grids are charged to attract secondary electrons from the sample. Triangular grids between the rectangular grids and a top grid above and parallel to the sample with an aperture therethrough for the E-beam are biased negatively to repel secondary electrons. Below the rectangular and triangular grids is located a cylindrical attraction grid biased positively, coaxial with the E-beam.
    Type: Grant
    Filed: June 1, 1990
    Date of Patent: October 15, 1991
    Assignee: International Business Machines Corporation
    Inventors: Steven D. Golladay, Fritz J. Hohn, David J. Hutson, William D. Meisburger, Juergen Rasch
  • Patent number: 4943769
    Abstract: An E-beam testing system uses the E-beam to test a sample with conductive elements thereon. The system charges conductive elements on the sample. Above the sample and parallel to its upper surface is a stacked pair of parallel extraction grids. One grid is biased positively to accelerate secondary electrons emitted from the sample. The other grid is biased at a voltage to control the angular distribution of secondary electrons passing through the grid. Rectangular double grid sets, tilted with respect to the beam and the sample, are located above and laterally of the sample and the E-beam. Those grids are charged to attract secondary electrons from the sample. Triangular grids between the rectangular grids and a top grid above and parallel to the sample with an aperture therethrough for the E-beam are biased negatively to repel secondary electrons. Below the rectangular and triangular grids is located a cylindrical attraction grid biased positively, coaxial with the E-beam.
    Type: Grant
    Filed: March 21, 1989
    Date of Patent: July 24, 1990
    Assignee: International Business Machines Corporation
    Inventors: Steven D. Golladay, Fritz J. Hohn, David J. Hutson, William D. Meisburger, Juergen Rasch