Patents by Inventor David J. Knuteson
David J. Knuteson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10629767Abstract: An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.Type: GrantFiled: December 27, 2018Date of Patent: April 21, 2020Assignee: NORTHROP GRUMMAN SYSTEMS CORPORATIONInventors: Narsingh B. Singh, John V. Veliadis, Bettina Nechay, Andre Berghmans, David J. Knuteson, David Kahler, Brian Wagner, Marc Sherwin
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Publication number: 20190131480Abstract: An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.Type: ApplicationFiled: December 27, 2018Publication date: May 2, 2019Applicant: NORTHROP GRUMMAN SYSTEMS CORPORATIONInventors: NARSINGH B. SINGH, JOHN V. VELIADIS, BETTINA NECHAY, ANDRE BERGHMANS, DAVID J. KNUTESON, DAVID KAHLER, BRIAN WAGNER, MARC SHERWIN
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Patent number: 10211359Abstract: An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.Type: GrantFiled: November 18, 2016Date of Patent: February 19, 2019Assignee: Northrop Grumman Systems CorporationInventors: Narsingh B. Singh, John V. Veliadis, Bettina Nechay, Andre Berghmans, David J. Knuteson, David Kahler, Brian Wagner, Marc Sherwin
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Publication number: 20170194527Abstract: An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.Type: ApplicationFiled: November 18, 2016Publication date: July 6, 2017Applicant: NORTHROP GRUMMAN SYSTEMS CORPORATIONInventors: NARSINGH B. SINGH, JOHN V. VELIADIS, BETTINA NECHAY, ANDRE BERGHMANS, DAVID J. KNUTESON, DAVID KAHLER, BRIAN WAGNER, MARC SHERWIN
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Patent number: 9570646Abstract: An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.Type: GrantFiled: February 20, 2014Date of Patent: February 14, 2017Assignee: Northrop Grumman Systems CorporationInventors: Narsingh B. Singh, John V. Veliadis, Bettina Nechay, Andre Berghmans, David J. Knuteson, David Kahler, Brian Wagner, Marc Sherwin
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Publication number: 20150236186Abstract: An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.Type: ApplicationFiled: February 20, 2014Publication date: August 20, 2015Applicant: NORTHROP GRUMMAN SYSTEMS CORPORATIONInventors: NARSINGH B. SINGH, John V. Veliadis, Bettina Nechay, Andre Berghmans, David J. Knuteson, David Kahler, Brian Wagner, Marc Sherwin
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Patent number: 8278666Abstract: The disclosure relates to a high purity 2H-SiC composition and methods for making same. The embodiments represented herein apply to both thin film and bulk growth of 2H-SiC. According to one embodiment, the disclosure relates to doping an underlying substrate or support layer with one or more surfactants to nucleate and grow high purity 2H-SiC. In another embodiment, the disclosure relates to a method for preparing 2H-SiC compositions by nucleating 2H-SiC on another SiC polytype using one or more surfactants. The surfactants can include AlN, Te, Sb and similar compositions. These nucleate SiC into disc form which changes to hexagonal 2H-SiC material.Type: GrantFiled: June 23, 2010Date of Patent: October 2, 2012Assignee: Northrop Grumman Systems CorporationInventors: Narsingh B. Singh, Sean R. McLaughlin, Thomas J. Knight, Robert M. Young, Brian P. Wagner, David A. Kahler, Andre E. Berghmans, David J. Knuteson, Ty R. McNutt, Jerry W. Hedrick, Jr., George M. Bates, Kenneth Petrosky
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Patent number: 7888248Abstract: A method for growing a SiC-containing film on a Si substrate is disclosed. The SiC-containing film can be formed on a Si substrate by, for example, plasma sputtering, chemical vapor deposition, or atomic layer deposition. The thus-grown SiC-containing film provides an alternative to expensive SiC wafers for growing semiconductor crystals.Type: GrantFiled: July 13, 2007Date of Patent: February 15, 2011Assignee: Northrop Grumman Systems CorporationInventors: Narsingh Bahadur Singh, Brian P. Wagner, David J. Knuteson, David Kahler, Andre E. Berghmans, Michael Aumer, Jerry W. Hedrick, Marc E. Sherwin, Michael M. Fitelson, Mark S. Usefara, Sean McLaughlin, Travis Randall, Thomas J. Knight
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Patent number: 7855108Abstract: A Si(1-x)MxC material for heterostructures on SiC can be grown by CVD, PVD and MOCVD. SIC doped with a metal such as Al modifies the bandgap and hence the heterostructure. Growth of SiC Si(1-x)MxC heterojunctions using SiC and metal sources permits the fabrication of improved HFMTs (high frequency mobility transistors), HBTs (heterojunction bipolar transistors), and HEMTs (high electron mobility transistors).Type: GrantFiled: February 26, 2010Date of Patent: December 21, 2010Assignee: Northrop Grumman Systems CorporationInventors: Narsingh B. Singh, Brian P. Wagner, David J. Knuteson, Michael E. Aumer, Andre Berghmans, Darren Thomson, David Kahler
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Patent number: 7830644Abstract: Methods of producing polycrystalline and single crystal dielectrics are disclosed, including dielectrics comprising CaCu3Ti4O12 or La3Ga5SiO4. Superior single crystals are manufactured with improved crystallinity by atomic lattice constant adjustments to the dielectric and to the substrate on which it is grown. Dielectric materials made according to the disclosed methods are useful for manufacture of energy storage devices, e.g. capacitors.Type: GrantFiled: March 5, 2007Date of Patent: November 9, 2010Assignee: Northop Grumman Systems CorporationInventors: Narsingh B. Singh, John J. Talvacchio, Marc Sherwin, Andre Berghmans, David J. Knuteson, David Kahler, Brian Wagner, John D. Adam
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Publication number: 20100192840Abstract: A Si(1-x)MxC material for heterostructures on SiC can be grown by CVD, PVD and MOCVD. SIC doped with a metal such as Al modifies the bandgap and hence the heterostructure. Growth of SiC Si(1-x)MxC heterojunctions using SiC and metal sources permits the fabrication of improved HFMTs (high frequency mobility transistors), HBTs (heterojunction bipolar transistors), and HEMTs (high electron mobility transistors).Type: ApplicationFiled: February 26, 2010Publication date: August 5, 2010Applicant: Northrop Grumman Systems CorporationInventors: Narsingh B. Singh, Brian P. Wagner, David J. Knuteson, Michael E. Aumer, Andre Berghmans, Darren Thomson, David Kahler
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Patent number: 7737534Abstract: A process is provided for fabricating a semiconductor device having a germanium nanofilm layer that is selectively deposited on a silicon substrate in discrete regions or patterns. A semiconductor device is also provided having a germanium film layer that is disposed in desired regions or having desired patterns that can be prepared in the absence of etching and patterning the germanium film layer. A process is also provided for preparing a semiconductor device having a silicon substrate having one conductivity type and a germanium nanofilm layer of a different conductivity type. Semiconductor devices are provided having selectively grown germanium nanofilm layer, such as diodes including light emitting diodes, photodetectors, and like. The method can also be used to make advanced semiconductor devices such as CMOS devices, MOSFET devices, and the like.Type: GrantFiled: June 10, 2008Date of Patent: June 15, 2010Assignee: Northrop Grumman Systems CorporationInventors: Sean R. McLaughlin, Narsingh Bahadur Singh, Brian Wagner, Andre Berghmans, David J. Knuteson, David Kahler, Anthony A. Margarella
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Patent number: 7683400Abstract: A Si(1-x)MxC material for heterostructures on SiC can be grown by CVD, PVD and MOCVD. SIC doped with a metal such as Al modifies the bandgap and hence the heterostructure. Growth of SiC Si(1-x)MxC heterojunctions using SiC and metal sources permits the fabrication of improved HFMTs (high frequency mobility transistors), HBTs (heterojunction bipolar transistors), and HEMTs (high electron mobility transistors).Type: GrantFiled: June 26, 2006Date of Patent: March 23, 2010Assignee: Northrop Grumman Systems CorporationInventors: Narsingh B. Singh, Brian P. Wagner, David J. Knuteson, Michael E. Aumer, Andre Berghmans, Darren Thomson, David Kahler
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Publication number: 20090302426Abstract: A process is provided for fabricating a semiconductor device having a germanium nanofilm layer that is selectively deposited on a silicon substrate in discrete regions or patterns. A semiconductor device is also provided having a germanium film layer that is disposed in desired regions or having desired patterns that can be prepared in the absence of etching and patterning the germanium film layer. A process is also provided for preparing a semiconductor device having a silicon substrate having one conductivity type and a germanium nanofilm layer of a different conductivity type. Semiconductor devices are provided having selectively grown germanium nanofilm layer, such as diodes including light emitting diodes, photodetectors, and like. The method can also be used to make advanced semiconductor devices such as CMOS devices, MOSFET devices, and the like.Type: ApplicationFiled: June 10, 2008Publication date: December 10, 2009Inventors: Sean R. McLaughlin, Narsingh Bahadur Singh, Brian Wagner, Andre Berghmans, David J. Knuteson, David Kahler, Anthony A. Margarella
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Publication number: 20090220801Abstract: The disclosure relates to a method and apparatus for growth of high-purity 6H SiC single crystal using a sputtering technique. In one embodiment, the disclosure relates to a method for depositing a high purity 6H-SiC single crystal film on a substrate, the method including: providing a silicon substrate having an etched surface; placing the substrate and an SiC source in a deposition chamber; achieving a first vacuum level in the deposition chamber; pressurizing the chamber with a gas; depositing the SiC film directly on the etched silicon substrate from a sputtering source by: heating the substrate to a temperature below silicon melting point, using a low energy plasma in the deposition chamber; and depositing a layer of hexagonal SiC film on the etched surface of the substrate.Type: ApplicationFiled: February 29, 2008Publication date: September 3, 2009Inventors: Brian Wagner, Travis J. Randall, Thomas J. Knight, David J. Knuteson, David Kahler, Andre E. Berghmans, Sean R. McLaughlin, Narsingh B. Singh, Mark Usefara
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Patent number: 7525099Abstract: A nuclear radiation detection system using narrowband UV crystal filters is disclosed. Since the photons produced during the decay of ?- and ?-radiation can be detected in the spectral range of about 200-350 nm (the ultraviolet range), UV filter based photo sensors are utilized for detection. The nuclear radiation detection system comprises an optical assembly capable of focusing on a source of radiation, a UV filter assembly having a narrowband UV crystal filter and positioned to receive light transmitted through the optical assembly, and a light detector positioned to receive light transmitted through the UV filter assembly. The narrowband UV crystal filter is fabricated from crystals selected from the group consisting of nickel fluorosilicate, nickel fluoroborate, and potassium nickel sulfate. The nickel fluorosilicate, nickel fluoroborate, and potassium nickel sulfate may be doped to achieve even narrower band filter.Type: GrantFiled: January 30, 2007Date of Patent: April 28, 2009Assignee: Northrop Grumman Systems CorporationInventors: Narsingh Bahadur Singh, Aaron A. Pesetski, Andre Berghmans, Brian P. Wagner, David Kahler, David J. Knuteson, Darren Thomson
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Publication number: 20090014756Abstract: A method for growing a SiC-containing film on a Si substrate is disclosed. The SiC-containing film can be formed on a Si substrate by, for example, plasma sputtering, chemical vapor deposition, or atomic layer deposition. The thus-grown SiC-containing film provides an alternative to expensive SiC wafers for growing semiconductor crystals.Type: ApplicationFiled: July 13, 2007Publication date: January 15, 2009Inventors: Narsingh Bahadur Singh, Brian P. Wagner, David J. Knuteson, David Kahler, Andre E. Berghmans, Michael Aumer, Jerry W. Hedrick, Marc E. Sherwin, Michael M. Fitelson, Mark S. Usefara, Sean McLaughlin, Travis Randall, Thomas J. Knight
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Publication number: 20080218940Abstract: Methods of producing polycrystalline and single crystal dielectrics are disclosed, including dielectrics comprising CaCu3Ti4O12 or La3Ga5SiO4. Superior single crystals are manufactured with improved crystallinity by atomic lattice constant adjustments to the dielectric and to the substrate on which it is grown. Dielectric materials made according to the disclosed methods are useful for manufacture of energy storage devices, e.g. capacitors.Type: ApplicationFiled: March 5, 2007Publication date: September 11, 2008Applicant: Northrop Grumman Systems CorporationInventors: Narsingh B. Singh, John J. Talvacchio, Marc Sherwin, Andre Berghmans, David J. Knuteson, David Kahler, Brian Wagner, John D. Adam
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Publication number: 20080206121Abstract: A substrate and method for growing a semi-conductive crystal on an alloy film such as (AIN)x(SiC)(1-x) without any buffer layer is disclosed. The (AIN)x(SiC)(1-x) alloy film can be formed on a SiC substrate by a vapor deposition process using AIN and SiC powder as starting materials. The (AIN)x(SiC)(1-x) alloy film provides a better lattice match for GaN or SiC epitaxial growth and reduces defects in epitaxially grown GaN with better lattice match and chemistry.Type: ApplicationFiled: April 18, 2008Publication date: August 28, 2008Inventors: Narsingh Bahadur Singh, Brian Wagner, Mike Aumer, Darren Thomson, David Kahler, Andre Berghmans, David J. Knuteson
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Publication number: 20080179534Abstract: A nuclear radiation detection system using narrowband UV crystal filters is disclosed. Since the photons produced during the decay of ?- and ?-radiation can be detected in the spectral range of about 200-350 nm (the ultraviolet range), UV filter based photo sensors are utilized for detection. The nuclear radiation detection system comprises an optical assembly capable of focusing on a source of radiation, a UV filter assembly having a narrowband UV crystal filter and positioned to receive light transmitted through the optical assembly, and a light detector positioned to receive light transmitted through the UV filter assembly. The narrowband UV crystal filter is fabricated from crystals selected from the group consisting of nickel fluorosilicate, nickel fluoroborate, and potassium nickel sulfate. The nickel fluorosilicate, nickel fluoroborate, and potassium nickel sulfate may be doped to achieve even narrower band filter.Type: ApplicationFiled: January 30, 2007Publication date: July 31, 2008Inventors: Narsingh Bahadur Singh, Aaron A. Pesetski, Andre Berghmans, Brian P. Wagner, David Kahler, David J. Knuteson, Darren Thomson