Abstract: A patient-side support system includes a base, a platform movably coupled to the base, manipulator assemblies coupled to the platform, instruments, each of the instruments being coupled to a different one of the manipulator assemblies, each of the instruments including a body and a shaft extending from the body, and a guide tube common to the instruments. A first part of the shaft of each individual one of the instruments extends distally from the guide tube to the body. a second part of the shaft of each individual one of the instruments extends through at least a portion of the guide tube. The first part of the shaft of a first instrument of the instruments is articulatable between the body of the first instrument and the guide tube. The guide tube and the instruments are collectively rotatable about a longitudinal axis of the guide tube.

Abstract: A method of growing atomically-flat surfaces and high quality low-defect crystal films of semiconductor materials and fabricating improved devices thereon. The method is also suitable for growing films heteroepitaxially on substrates that are different than the film. The method is particularly suited for growth of elemental semiconductors (such as Si), compounds of Groups III and V elements of the Periodic Table (such as GaN), and compounds and alloys of Group IV elements of the Periodic Table (such as SiC).

Abstract: A method of growing atomically-flat surfaces and high-quality low-defect crystal films of polytypic compounds heteroepitaxially on polytypic compound substrates that are different than the crystal film. The method is particularly suited for the growth of 3C-SiC, 2H-AlN, and 2H-GaN on 6H-SiC.

Abstract: A method of controlling the amount of impurity incorporation in a crystal grown by a chemical vapor deposition process. Conducted in a growth chamber, the method includes the controlling of the concentration of the crystal growing components in the growth chamber to affect the demand of particular growth sites within the growing crystal thereby controlling impurity incorporation into the growth sites.

Abstract: A method of controlling the amount of impurity incorporation in a crystal grown by a chemical vapor deposition process. Conducted in a growth chamber, the method includes the controlling of the concentration of the crystal growing components in the growth chamber to affect the demand of particular growth sites within the growing crystal thereby controlling impurity incorporation into the growth sites.

Abstract: This invention is a method for the controlled growth of single-crystal semiconductor-device-quality films of SiC polytypes on vicinal (0001) SiC wafers with low tilt angles. Both homoepitaxial and heteroepitaxial SiC films can be produced on the same wafer. In particular, 3C-SiC and 6H-SiC films can be produced within selected areas of the same 6H-SiC wafer.

Abstract: A shut-off seal for a rotatable shaft penetrating a fluid-holding tank through an opening below the fluid surface. The shut-off seal has a collar secured to the shaft inside the tank and a positionable annular shut-off ring which may be moved into engagement with the collar. The invention enables leakage-free shutdown for servicing an associated rotary seal without moving the rotary seal axially along the shaft.

Abstract: A shut off seal in a device having a rotatable shaft extending through a nozzle side entry structure of a tank is provided by means of a slidable stuffing box housing which can be moved by jack screws into engagement with a sealing collar fastened to the shaft inboard of the housing. The arrangement enables the changing of the packing about the shaft without draining the tank.