Abstract: A controller of a chemical mechanical polishing system is configured to cause a carrier head to sweep across a polishing pad in accord with a sweep profile. The controller is also configured to select values for a plurality of control parameters to minimize a difference between a target removal profile and an expected removal profile. The plurality of control parameters include a plurality of dwell time parameters. A relationship between the plurality of control parameters and a removal rate is stored in a data structure representing a first matrix which includes a plurality of columns including a column for each dwell time parameter and a row for each position on the substrate represented in the expected removal profile, and the controller is configured to, as part of selection of the values, calculate the expected removal profile by multiplying the first matrix by a second matrix representing control parameter values.

Abstract: A polishing system includes a platen having a top surface to support a main polishing pad. The platen is rotatable about an axis of rotation that passes through approximately the center of the platen. An annular flange projects radially outward from the platen to support an outer polishing pad. The annular flange has an inner edge secured to and rotatable with the platen and vertically fixed relative to the top surface of the platen. The annular flange is vertically deflectable such that an outer edge of the annular flange is vertically moveable relative to the inner edge. An actuator applies pressure to an underside of the annular flange in an angularly limited region, and a carrier head holds a substrate in contact with the polishing pad and is movable to selectively position a portion of the substrate over the outer polishing pad.

Abstract: Exemplary carrier heads for a chemical mechanical polishing apparatus may include a carrier body. The carrier heads may include a substrate mounting surface coupled with the carrier body. The carrier heads may include an inner ring that is sized and shaped to circumferentially surround a peripheral edge of a substrate positioned against the substrate mounting surface. The inner ring may be characterized by a first surface that faces the carrier body and a second surface opposite the first surface. The carrier heads may include at least one downforce control actuator disposed above the first surface of the inner ring at a discrete position about a circumference of the inner ring.

Abstract: A polishing system includes a platen having a top surface to support a main polishing pad. The platen is rotatable about an axis of rotation that passes through approximately the center of the platen. An annular flange projects radially outward from the platen to support an outer polishing pad. The annular flange has an inner edge secured to and rotatable with the platen and vertically fixed relative to the top surface of the platen. The annular flange is vertically deflectable such that an outer edge of the annular flange is vertically moveable relative to the inner edge. An actuator applies pressure to an underside of the annular flange in an angularly limited region, and a carrier head holds a substrate in contact with the polishing pad and is movable to selectively position a portion of the substrate over the outer polishing pad.

Abstract: A method and apparatus for a separable assembly in a platen assembly is provided. The two components of the separable assembly couple together through the first coupling member and the second coupling member, and the coupling is magnetic. The web assembly and hub assembly are placed or decoupled via the methods as described above. The separable components of the assembly reduce the cost and time of removing the entire platen assembly from the CMP system when maintenance or repair is to be performed.

Abstract: Implementations described herein generally relate to methods and apparatus for polishing substrates, more particularly, to methods and apparatus for identifying and/or tracking polishing material in a roll-to-roll polishing system. In one implementation, a method of polishing a substrate is provided. The method comprises advancing a polishing material across a surface of a platen. The polishing material has a polishing surface and an opposing backside surface and the backside surface has a pattern of identifying features formed thereon. The method further comprises sensing the movement of the pattern of identifying features past a detector assembly. The method further comprises controlling a position of the polishing material relative to the platen based on data received from the sensed movement of the pattern of identifying features.

Abstract: A method of polishing includes storing a predetermined location and a predetermined number as criteria for detecting an end point, polishing a substrate, measuring a sequence of current spectra of light reflected from the substrate while the substrate is being polished, identifying a plurality of peaks or valleys that persist with an evolving location through at least some of the sequence of current spectra, counting a number of peaks or valleys that were identified that pass the predetermined location as polishing progresses, and ceasing to polish the substrate when the number counted reaches the predetermined number.

Abstract: A method of polishing includes storing a predetermined location and a predetermined number as criteria for detecting an end point, polishing a substrate, measuring a sequence of current spectra of light reflected from the substrate while the substrate is being polished, identifying a plurality of peaks or valleys that persist with an evolving location through at least some of the sequence of current spectra, counting a number of peaks or valleys that were identified that pass the predetermined location as polishing progresses, and ceasing to polish the substrate when the number counted reaches the predetermined number.

Abstract: A polishing system receives one or more target parameters for a selected peak in a spectrum of light, polishes a substrate, measures a current spectrum of light reflected from the substrate while the substrate is being polished, identifies the selected peak in the current spectrum, measures one or more current parameters of the selected peak in the current spectrum, compares the current parameters of the selected peak to the target parameters, and ceases to polish the substrate when the current parameters and the target parameters have a pre defined relationship.

Abstract: A method of operating a polishing system includes polishing a substrate at a polishing station, the substrate held by a carrier head during polishing, transporting the substrate to an in-sequence optical metrology system positioned between the polishing station and another polishing station or a transfer station, measuring a plurality of spectra reflected from the substrate with a probe of the optical metrology system while moving the carrier head to cause the probe to traverse a path across the substrate and while the probe remains stationary, the path across the substrate comprising either a plurality of concentric circles or a plurality of substantially radially aligned arcuate segments, and adjusting a polishing endpoint or a polishing parameter of the polishing system based on one or more characterizing values generated based on at least some of the plurality of spectra.

Abstract: Methods, apparatus, and systems are provided for detecting the presence of a substrate in a load cup. The invention includes a proximity sensor having a detection pad disposed below a contact surface of a load cup assembly and a target disposed on a lever member and adapted to move toward the detection pad when a substrate is placed on the lever member and adapted to move away from the detection pad when a substrate is removed from the lever member. Numerous additional aspects are disclosed.

Abstract: A polishing apparatus includes a carrier head configured to hold a wafer in a first plane, the wafer having a perimeter and a fiducial, a drive shaft having an axis perpendicular to the first plane and configured to rotate the carrier head about the axis, a light source configured to direct light onto an outer face of the wafer at a position adjacent the perimeter of the wafer; a detector configured to detect the light collected from the wafer while the drive shaft rotates the carrier head and the wafer; and a controller configured to receive a first signal indicating an angular position of the drive shaft and receive a second signal from the detector, the controller configured to determine based on the first signal and the second signal an angular position of the fiducial with respect the carrier head.

Abstract: A method of operating a polishing system includes polishing a substrate at a polishing station, the substrate held by a carrier head during polishing, transporting the substrate to an in-sequence optical metrology system positioned between the polishing station and another polishing station or a transfer station, measuring a plurality of spectra reflected from the substrate with a probe of the optical metrology system while moving the carrier head to cause the probe to traverse a path across the substrate and while the probe remains stationary, the path across the substrate comprising either a plurality of concentric circles or a plurality of substantially radially aligned arcuate segments, and adjusting a polishing endpoint or a polishing parameter of the polishing system based on one or more characterizing values generated based on at least some of the plurality of spectra.

Abstract: A polishing system receives one or more target parameters for a selected peak in a spectrum of light, polishes a substrate, measures a current spectrum of light reflected from the substrate while the substrate is being polished, identifies the selected peak in the current spectrum, measures one or more current parameters of the selected peak in the current spectrum, compares the current parameters of the selected peak to the target parameters, and ceases to polish the substrate when the current parameters and the target parameters have a pre defined relationship.

Abstract: A polishing system receives one or more target parameters for a selected peak in a spectrum of light, polishes a substrate, measures a current spectrum of light reflected from the substrate while the substrate is being polished, identifies the selected peak in the current spectrum, measures one or more current parameters of the selected peak in the current spectrum, compares the current parameters of the selected peak to the target parameters, and ceases to polish the substrate when the current parameters and the target parameters have a pre defined relationship.

Abstract: Methods, apparatus, and systems are provided for detecting the presence of a substrate in a load cup. The invention includes a proximity sensor having a detection pad disposed below a contact surface of a load cup assembly and a target disposed on a lever member and adapted to move toward the detection pad when a substrate is placed on the lever member and adapted to move away from the detection pad when a substrate is removed from the lever member. Numerous additional aspects are disclosed.

Abstract: A chemical mechanical polishing pad is described. A chemical mechanical polishing pad has an outer layer that includes a polishing surface, a first thinned region defined by a recess on a bottom surface of the pad, a first thick region surrounding the first thinned region, a second thinned region surrounding the first thick region, and a second thick region surrounding the second thinned region. The first thick region is not vertically extendable. The second thinned region defines one or more flexure mechanisms configured to make the first thinned region and the first thick region movable relative to the second thick region in a direction parallel or substantially parallel to the polishing surface.

Abstract: A polishing system receives one or more target parameters for a selected peak in a spectrum of light, polishes a substrate, measures a current spectrum of light reflected from the substrate while the substrate is being polished, identifies the selected peak in the current spectrum, measures one or more current parameters of the selected peak in the current spectrum, compares the current parameters of the selected peak to the target parameters, and ceases to polish the substrate when the current parameters and the target parameters have a pre defined relationship.

Abstract: A polishing system receives one or more target parameters for a selected peak in a spectrum of light, polishes a substrate, measures a current spectrum of light reflected from the substrate while the substrate is being polished, identifies the selected peak in the current spectrum, measures one or more current parameters of the selected peak in the current spectrum, compares the current parameters of the selected peak to the target parameters, and ceases to polish the substrate when the current parameters and the target parameters have a pre defined relationship.

Abstract: A chemical mechanical polishing pad is described. A chemical mechanical polishing pad has an outer layer that includes a polishing surface, a first thinned region defined by a recess on a bottom surface of the pad, a first thick region surrounding the first thinned region, a second thinned region surrounding the first thick region, and a second thick region surrounding the second thinned region. The first thick region is not vertically extendable. The second thinned region defines one or more flexure mechanisms configured to make the first thinned region and the first thick region movable relative to the second thick region in a direction parallel or substantially parallel to the polishing surface.