Abstract: The invention provides a device for iontophoretically transporting a compound through a localized region of an individual's body tissue. The device comprises first and second iontophoretic electrodes, a reference electrode, a current source, and a monitoring means. The first electrode is placed in ion-conducting relation with the localized region to allow iontophoretic transport of a compound therethrough. The second and transport electrodes are each placed in contact with the individual's body tissue, and all electrodes are spaced apart from each other. The current source is electrically connected to the first and second electrodes and applies a current to the localized region of body tissue to effect iontophoretic transport. The monitoring means monitors the electrical resistance of the localized region by measuring any voltage difference between the reference electrode and the first and/or second electrodes.

Abstract: An iontophoretic method is provided to selectively transport a compound of interest through a localized region of an individual's body tissue that exhibits a low electrical resistance and/or a high permeability. The method involves placing a permselective material, typically having a resistance comparable or higher than the resistance of the localized region, in ion-conducting relation to the localized region. An electrical current is then applied through the permselective material to the localized region, thereby transporting the compound of interest iontophoretically through the localized region. When the permselective material is capable of hindering iontophoretic transport of a competing ion, the transference efficiency of the compound of interest is increased during iontophoresis. As a result, the compound of interest is delivered into or extracted from the localized region at an enhanced rate. As transport efficiencies approach unity, absolute predictivity of transport also becomes possible.

Abstract: A method for forming an epitaxial layer involves depositing a buffer layer on a substrate by a first deposition process, followed by deposition of an epitaxial layer by a second deposition process. By using such a dual process, the first and second deposition processes can be optimized, with respect to performance, growth rate, and cost, for different materials of each layer. A semiconductor heterostructure prepared by a dual deposition process includes a buffer layer formed on a substrate by MOCVD, and an epitaxial layer formed on the buffer layer, the epitaxial layer deposited by hydride vapor-phase deposition.

Abstract: The present invention is drawn to a pharmaceutical compound for the treatment of posterior retinal diseases through topical application of the compound. The compound includes an effective amount of a therapeutic compound, and at least one additional agent that helps to prolong the residence time of the therapeutic compound within the extraocular space, or increase the transport of the therapeutic compound across a tissue of an eye toward and into a posterior ocular region, or both. The invention is additionally drawn to a device and method for delivering the compound.

Abstract: An epitaxial film of a III-V compound may be formed on a non-native substrate by sequentially forming a plurality of epitaxial layers on the substrate at a growth temperature. By cooling the substrate and each sequentially grown epitaxial layer to a sub-growth temperature prior to resumption of epitaxial growth, stress within the sample (due to thermal mismatch between the substrate and the epitaxial layer) is periodically relieved. Sequential epitaxial growth is combined with system etching to provide an epitaxial layer which not only has a lower propensity to shatter, but also exhibits improved surface morphology. Sequential hydride vapor-phase epitaxy using HCl as both source gas and etchant, allows integration of sequential deposition and system etching into a single process.

Abstract: A method for the production of a crack-free epitiaxial film having a thickness greater than that which can be achieved by continuous epitaxial crystal growth. This epitaxial film can be used as is in a device, used as a substrate platform for further epitaxy, or separated from the initial substrate material and used as a free-standing substrate platform. The method utilizes a defect-rich initial layer that absorbs epitaxially derived stresses and another layer, which is not defect-rich, which planarizes the crystal growth front, if necessary and provides high quality epitaxial region near the surface.

Abstract: The invention provides a device for iontophoretically transporting a compound through a localized region of an individual's body tissue. The device comprises first and second iontophoretic electrodes, a reference electrode, a current source, and a monitoring means. The first electrode is placed in ion-conducting relation with the localized region to allow iontophoretic transport of a compound therethrough. The second and transport electrodes are each placed in contact with the individual's body tissue, and all electrodes are spaced apart from each other. The current source is electrically connected to the first and second electrodes and applies a current to the localized region of body tissue to effect iontophoretic transport. The monitoring means monitors the electrical resistance of the localized region by measuring any voltage difference between the reference electrode and the first and/or second electrodes. Methods for using a reference electrode to monitor and control iontophoresis are also provided.

Abstract: Antibodies, and particularly human antibodies, are disclosed that demonstrate activity in the treatment of demyelinating diseases as well as other diseases of the central nervous system that are of viral, bacterial or idiopathic origin, including neural dysfunction caused by spinal cord injury. Neuromodulatory agents are set forth that include and comprise a material selected from the group consisting of an antibody capable of binding structures or cells in the central nervous system, a peptide analog, a hapten, active fragments thereof, agonists thereof, mimics thereof, monomers thereof and combinations thereof. The neuromodulatory agent has one or more of the following characteristics: it is capable of inducing remyelination; binding to neural tissue; promoting Ca++ signaling with oligodendrocytes; and promoting cellular proliferation of glial cells. Amino acid and DNA sequences of exemplary antibodies are disclosed.

Abstract: A hybrid deposition system includes a reactor chamber, at least one heating unit, a first reagent gas source, a metallo-organic source, a second reagent gas source, and a valve unit for stopping flow of gas from the metallo-organic source. The hybrid incorporates features of both metal-organic chemical vapor deposition (MOCVD) and hydride vapor-phase epitaxy (HVPE). The hybrid system may be operated in MOCVD mode, in HVPE mode, or in both MOCVD and HVPE mode simultaneously. The system may be switched between deposition modes without interrupting deposition, or removing the sample from the reactor chamber. The at least one heating unit may be moved relative to the reactor chamber, or vice versa, for easily and rapidly adjusting the temperature of the reactor chamber. A method for forming at least one epitaxial layer of a III-V compound on a non-native substrate in which deposition is performed by two different techniques in the same reactor chamber.

Abstract: A method for forming an epitaxial layer involves depositing a buffer layer on a substrate by a first deposition process, followed by deposition of an epitaxial layer by a second deposition process. By using such a dual process, the first and second deposition processes can be optimized, with respect to performance, growth rate, and cost, for different materials of each layer. A semiconductor heterostructure prepared by a dual deposition process includes a buffer layer formed on a substrate by MOCVD, and an epitaxial layer formed on the buffer layer, the epitaxial layer deposited by hydride vapor-phase deposition.

Abstract: A device and method are provided that minimize the changes in flux encountered during iontophoresis and reduce inter-subject variability. For drug delivery, the active agent to be delivered is administered in conjunction with at least one background ion having a hindrance factor that changes at a faster rate than the hindrance factor of the active agent when an electrical current is applied. For analyte extraction, the extraction reservoir contains at least one background ion having a hindrance factor that changes at a faster rate than the hindrance factor of the background ions of the analyte in the tissue when an electrical current is applied.

Abstract: An iontophoretic method for transporting compounds of interest across a body tissue is provided. The method can be used to extract analytes or deliver drugs. The method utilizes a polyelectrolyte and provides for the maintenance of a substantially constant flux across a localized region of the tissue through which transport occurs, thereby allowing a compound of interest to be transported across the tissue in a controlled and predictable manner. In addition, the presence of the polyclectrolyte reduces the lag-time of molecular transport through the body tissue.

Abstract: A method for the production of crack-free Group III-Nitride layers is disclosed. The method proceeds by growing a crack-free first layer of Group III-Nitride on a starting substrate. A partial to complete loss of coherency is then achieved between a lattice of the first layer and a lattice of the starting substrate. A second layer is grown to form a composite layer that includes the first layer and the second layer such that the first layer is between the second layer and the substrate. The starting substrate may then be completely separated from the composite layer to produce the freestanding crack-free Group III-Nitride layer.

Abstract: A system and method are provided for brokered rendering. In one embodiment, the method comprises the steps of: examining a document embodied in a non-rendered format in a computer system to identify at least one rendering operation to be performed to convert the document into a rendered format to be employed in printing the document, identifying at least one rendering application capable of performing the at least one rendering operation, and, applying the document to the at least one rendering application to implement the at least one rendering operation.

Abstract: A system, method, and program embodied on a computer readable medium are provided for configuring the automated print agent for printing. In one embodiment, the method comprises receiving an email print message addressed to a network alias, the network alias being associated with an automated print agent employed for performing an email print, identifying a printer specified in the email print message, determining if the automated print agent is configured for printing to the printer, and, automatically configuring the automated print agent to print to the printer upon a determination that the automated print agent is not configured to print to the printer.

Abstract: A printing system and method are provided that facilitate the mobile printing of a document. The printing system comprises an automated print agent located in a device coupled to a network. The printing system also comprises a network alias associated with a printer coupled to the network, where the automated print agent acting as a network destination for a transmitted document addressed to the network alias. The automated print agent orchestrates the printing of the transmitted document on the printer upon receipt of the transmitted document from a transmitting device.

Abstract: A method for the production of crack-free Group III-Nitride layers is disclosed. The method proceeds by growing a crack-free first layer of Group III-Nitride on a starting substrate. A partial to complete loss of coherency is then achieved between a lattice of the first layer and a lattice of the starting substrate. A second layer is grown to form a composite layer that includes the first layer and the second layer such that the first layer is between the second layer and the substrate. The starting substrate may then be completely separated from the composite layer to produce the freestanding crack-free Group III-Nitride layer.

Abstract: Methods are described for treating demyelinating diseases in mammals, such as multiple sclerosis in humans, and viral diseases of the central nervous system of humans and domestic animals, such as post-infectious encephalomyelitis, or prophylactly inhibiting the initiation or progression of demyelination in these disease states, using the monoclonal autoantibodies SCH 94.03, SCH 79.08, O1, O4, A2B5, HNK-1, active fragments thereof and natural or synthetic autoantibodies having the characteristics of mAb SCH 94.03, SCH 79.08, O1, O4, A2B5 and HNK-1.

Abstract: An iontophoretic method for transporting compounds of interest across a body tissue is provided. The method utilizes an AC signal in conjunction with a barrier-modifying agent such as a fatty acid, fatty alcohol, bile acid, surfactant, or the like. The method enables the maintenance of a substantially constant electrical state in a localized region of the tissue through which transport occurs, thereby allowing a compound of interest to be transported across the tissue in a controlled and predictable manner. The barrier-modifying agent reduces the time as well as the voltage level required to achieve a target electrical resistance, thereby reducing patient discomfort and increasing the battery life of the iontophoresis device.

Abstract: A method for forming an epitaxial layer involves depositing a buffer layer on a substrate by a first deposition process, followed by deposition of an epitaxial layer by a second deposition process. By using such a dual process, the first and second deposition processes can be optimized, with respect to performance, growth rate, and cost, for different materials of each layer. A semiconductor heterostructure prepared by a dual deposition process includes a buffer layer formed on a substrate by MOCVD, and an epitaxial layer formed on the buffer layer, the epitaxial layer deposited by hydride vapor-phase deposition.