Abstract: A supercritical fluid cleaning system uses process fluid for operating rotary motors in the chamber with fluid bearings and fluid load levitation for rotating workpieces and impellers. Rotating speed and direction sensors and a home position locator facilitate motor control. Impellers add further agitation of the fluid in the chamber, faster processing, and greater uniformity of supercritical fluid components and increase mass transfer of fluid to the processed surface. Centrifugal operated clips and cassettes hold wafers and impellers. Non-contact, fluid operated rotating mechanisms reduce contamination. Physical, rotational, and shear affects are enhanced through centrifugal forces which can induce the separation of films localized deposits or molecular products of the reaction from the surface. There is a concomitant agitation of fluid, and continuous angular acceleration imparted to the processed surface features.

Abstract: A supercritical fluid cleaning system and method comprising mainly a pressure chamber, a closable lid, a substrate support for holding at least one substrate, a rotable shaft extending outward from within the chamber, an external rotary power source coupled magnetically or otherwise to the shaft, and a rotable component or impeller attached to the chamber end of the shaft in close proximity to the substrate holding position, and baffles located close to the rotable component. The rotable component is con|figured for rotation within the supercritical phase fluid in the chamber close to the surface of the wafer for causing agitation and turbulent fluid flow against the surface of the substrate, and increased intra-chamber fluid circulation.

Abstract: A supercritical fluid cleaning system uses process fluid for operating rotary motors in the chamber with fluid bearings and fluid load levitation for rotating workpieces and impellers. Rotating speed and direction sensors and a home position locator facilitate motor control. Impellers add further agitation of the fluid in the chamber, faster processing, and greater uniformity of supercritical fluid components and increase mass transfer of fluid to the processed surface. Centrifugal operated clips and cassettes hold wafers and impellers. Non-contact, fluid operated rotating mechanisms reduce contamination. Physical, rotational, and shear affects are enhanced through centrifugal forces which can induce the separation of films localized deposits or molecular products of the reaction from the surface. There is a concomitant agitation of fluid, and continuous angular acceleration imparted to the processed surface features.

Abstract: A supercritical fluid cleaning system and method comprising mainly a pressure chamber, a closable lid, a substrate support for holding at least one substrate, a rotable shaft extending outward from within the chamber, an external rotary power source coupled magnetically or otherwise to the shaft, and a rotable component or impeller attached to the chamber end of the shaft in close proximity to the substrate holding position, and baffles located close to the rotable component. The rotable component is configured for rotation within the supercritical phase fluid in the chamber close to the surface of the wafer for causing agitation and turbulent fluid flow against the surface of the substrate, and increased intra-chamber fluid circulation.

Abstract: One embodiment of the present invention provides a method for the removal of organic sacrificial layers from a micro-electromechanical structure including the steps of: immersing the structure in at least one bath of at least a first organic solvent, thereby removing substantially all of the organic sacrificial layers; rinsing the structure in a bath of a second organic solvent; transferring the structure to a pressure chamber without substantial evaporation of the second organic solvent wherein the structure is immersed in a second bath of the second organic solvent; closing, pressurizing and filling the pressure chamber with liquid carbon dioxide whereby the second solvent is substantially displaced; heating the liquid carbon dioxide above its critical temperature, thereby permitting the carbon dioxide to undergo a phase change to the supercritical phase; venting the carbon dioxide to the atmosphere.

Abstract: An elevated pressure and temperature fluid processing system providing a pressurized fluid delivery system including a process fluid supply system and pump for supplying a process fluid at a process pressure, and a process fluid heater for heating the process fluid; a process chamber with a process chamber heater; and a process discharge collection system. The system also provides a process chamber inflow valve for connecting the pressurized fluid delivery system to the process chamber for fluid flow, and a process chamber outflow valve for connecting the process chamber to the collection system for fluid flow. A process chamber bypass valve connects the pressurized fluid delivery system to the process discharge collection system so as to bypass the process chamber. A computer control system controls the pump, the process fluid heater, the chamber heater, and the valves.

Abstract: A dry process for the cleaning of precision surfaces such as of semiconductor wafers, by using process materials such as carbon dioxide and useful additives such as cosolvents and surfactants, where the process materials are applied exclusively in gaseous and supercritical states. Soak and agitation steps are applied to the wafer, including a rapid decompression of the process chamber after a soak period at higher supercritical pressure, to mechanically weaken break up the polymers and other materials sought to be removed, combined with a supercritical fluid flush to carry away the loose debris.

Abstract: A gas cluster ion beam (GCIB) etching process having a system for producing a gas cluster ion beam utilized to controllably etch a substrate. The gas cluster ion beam is initially directed along a preselected longitudinal axis. A portion of the GCIB etching apparatus is operably connected to the beam producing system and contains the substrate to be etched when impacted by said gas cluster ion beam. The portion of the GCIB etching apparatus includes a system for directing the gas cluster ion beam in a direction offset from the preselected longitudinal axis while permitting unwanted ionizing radiation to remain directed along the longitudinal axis. A substrate holder is located within a portion of the GCIB etching apparatus for positioning the substrate in line with the offset gas cluster ion beam during the etching process, and the unwanted ionizing radiation being substantially prevented from impinging upon the substrate during the etching process.

Abstract: A continuous flow, steady state fluid delivery and recovery system for a process chamber and processes requiring supercritical fluid and desired additives including co-solvents, for conducting repetitive batch processing operations in an automated environment, for such processes as supercritical carbon dioxide cleaning and processing of semiconductor wafers. The system provides for steady-state operation of fluid flow and byproducts recovery while the process chamber is brought rapidly and repeatedly on and off line as in batch operations and for various process steps.

Abstract: A dry process for the cleaning of precision surfaces such as of semiconductor wafers, by using process materials such as carbon dioxide and useful additives such as cosolvents and surfactants, where the process materials are applied exclusively in gaseous and supercritical states. Soak and agitation steps are applied to the wafer, including a rapid decompression of the process chamber after a soak period at higher supercritical pressure, to mechanically weaken break up the polymers and other materials sought to be removed, combined with a supercritical fluid flush to carry away the loose debris.

Abstract: An apparatus and process for cleaning residual matter, photoresist and other foreign materials off wafers, substrates and semiconductor work pieces including photomasks, compact discs, flat panel displays using megasonic acoustic wave action techniques in conjunction with supercritical fluid cleaning processes, and in particular, for coupling megasonics techniques with supercritical carbon dioxide processing with co-solvents and surfactants, using cycles of soak, rapid decompression and flushing, to improve cleaning capability and to remove submicron particles from the surfaces of wafers.

Abstract: A gas cluster ion beam (GCIB) etching process having a system for producing a gas cluster ion beam utilized to controllably etch a substrate. The gas cluster ion beam is initially directed along a preselected longitudinal axis. A portion of the GCIB etching apparatus is operably connected to the beam producing system and contains the substrate to be etched when impacted by said gas cluster ion beam. The portion of the GCIB etching apparatus includes a system for directing the gas cluster ion beam in a direction offset from the preselected longitudinal axis while permitting unwanted ionizing radiation to remain directed along the longitudinal axis. A substrate holder is located within a portion of the GCIB etching apparatus for positioning the substrate in line with the offset gas cluster ion beam during the etching process, and the unwanted ionizing radiation being substantially prevented from impinging upon the substrate during the etching process.

Abstract: A dry process for the cleaning of precision surfaces such as of semiconductor wafers, by using process materials such as carbon dioxide and useful additives such as cosolvents and surfactants, where the process materials are applied exclusively in gaseous and supercritical states. Soak and agitation steps are applied to the wafer, including a rapid decompression of the process chamber after a soak period at higher supercritical pressure, to mechanically weaken break up the polymers and other materials sought to be removed, combined with a supercritical fluid flush to carry away the loose debris.

Abstract: A gas cluster ion beam (GCIB) etching apparatus having a system for producing a gas cluster ion beam utilized to controllably etch a substrate. The gas cluster ion beam is initially directed along a preselected longitudinal axis. A portion of the GCIB etching apparatus is operably connected to the beam producing system and contains the substrate to be etched when impacted by said gas cluster ion beam. The portion of the GCIB etching apparatus includes a system for directing the gas cluster ion beam in a direction offset from the preselected longitudinal axis while permitting unwanted ionizing radiation to remain directed along the longitudinal axis. A substrtate holder is located within a portion of the GCIB etching apparatus for positioning the substrate in line with the offset gas cluster ion beam during the etching process, and the unwanted ionizing radiation being substantially prevented from impinging upon the substrate during the etching process.

Abstract: A continuous flow, steady state fluid delivery and recovery system for a process chamber and processes requiring supercritical fluid and desired additives including co-solvents, for conducting repetitive batch processing operations in an automated environment, for such processes as supercritical carbon dioxide cleaning and processing of semiconductor wafers. The system provides for steady-state operation of fluid flow and byproducts recovery while the process chamber is brought rapidly and repeatedly on and off line as in batch operations and for various process steps.