Abstract: A high reliability dual inline memory module with a fault tolerant address and command bus for use in a server. The memory module is a card approximately 151.35 mm or 5.97 inches long provided with about a plurality of contacts of which some are redundant, a plurality of DRAMs, a phase lock loop, a 2 or 32K bit serial EE PROM and a 28 bit and a 1 to 2 register having error correction code (ECC), parity checking, a multi-byte fault reporting circuitry for reading via an independent bus, and real time error lines for determining and reporting both correctable errors and uncorrectable error conditions coupled to the server's memory interface chip and memory controller or processor such that the memory controller sends address and command information to the register via address/command lines together with check bits for error correction purposes to the ECC/ Parity register.

Abstract: A high reliability dual inline memory module with a fault tolerant address and command bus for use in a server. The memory module is a card approximately 151.35 mm or 5.97 inches long provided with about a plurality of contacts of which some are redundant, a plurality of DRAMs, a phase lock loop, a 2 or 32 K bit serial EE PROM and a 28 bit and a 1 to 2 register having error correction code (ECC), parity checking, a multi-byte fault reporting circuitry for reading via an independent bus, and real time error lines for determining and reporting both correctable errors and uncorrectable error conditions coupled to the server's memory interface chip and memory controller or processor such that the memory controller sends address and command information to the register via address/command lines together with check bits for error correction purposes to the ECC/Parity register.

Abstract: A high reliability dual inline memory module with a fault tolerant address and command bus for use in a server. The memory module is a card provided with a plurality of contacts of which some are redundant, a plurality of DRAMs, a phase lock loop, a 2 or 32K bit serial EE PROM, and a 28 bit 1 to 2 register having error correction code (ECC), parity checking, a multi-byte fault reporting circuitry for reading via an independent bus, and real time error lines for determining and reporting both correctable errors and uncorrectable error conditions coupled to the server's memory interface chip and memory controller or processor such that the memory controller sends address and command information to the register via address/command lines together with check bits for error correction purposes to the ECC/Parity register.

Abstract: A high reliability dual inline memory module with a fault tolerant address and command bus for use in a server. The memory module is a card approximately 151.35 mm or 5.97 inches long provided with about a plurality of contacts of which some are redundant, a plurality of DRAMs, a phase lock loop, a 2 or 32K bit serial EE PROM and a 28 bit, a 1 to 2 register having error correction code (ECC), parity checking, a multi-byte fault reporting circuitry for reading via an independent bus, and real time error lines for determining and reporting both correctable errors and uncorrectable error conditions coupled to the server's memory interface chip and memory controller or processor such that the memory controller sends address and command information to the register via address/command lines together with check bits for error correction purposes to the ECC/Parity register.

Abstract: A high reliability dual inline memory module with a fault tolerant address and command bus for use in a server. The memory module is a card approximately 151.35 mm or 5.97 inches long provided with about a plurality of contacts of which some are redundant, a plurality of DRAMs, a phase lock loop, a 2 or 32K bit serial EE PROM and a 28 bit and a 1 to 2 register having error correction code (ECC), parity checking, a multi-byte fault reporting circuitry for reading via an independent bus, and real time error lines for determining and reporting both correctable errors and uncorrectable error conditions coupled to the server's memory interface chip and memory controller or processor such that the memory controller sends address and command information to the register via address/command lines together with check bits for error correction purposes to the ECC/Parity register.

Abstract: A fabrication method and resultant monolithic electronic module having a separately formed thin-film layer attached to a side surface. The fabrication method includes providing an electronic module composed of stacked integrated circuit chips. A thin-film layer is separately formed on a temporary support which is used to attach the thin-film layer to the electronic module. The disclosed techniques may also be used for attaching an interposer, which may include active circuity, to an electronic module. Specific details of the fabrication method, resulting multichip packages, and various thin-film structures are set forth.

Abstract: Methods for alignment of stacked integrated circuit chips and the resultant three-dimensional semiconductor structures. A thickness control layer is deposited, as needed, on each integrated circuit chip. The thickness of the layer is determined by the thickness of the chip following a grind stage in the fabrication process. Complementary patterns are etched into the thickness control layer of each chip and into adjacent chips. Upon stacking the chips in a three dimensional structure, precise alignment is obtained for interconnect pads which are disposed on the edges of each integrated circuit chip. Dense bus and I/O networks can be thereby supported on a face of the resultant three-dimensional structure.

Abstract: Methods for alignment of stacked integrated circuit chips and the resultant three-dimensional semiconductor structures. A thickness control layer is deposited, as needed, on each integrated circuit chip. The thickness of the layer is determined by the thickness of the chip following a grind stage in the fabrication process. Complementary patterns are etched into the thickness control layer of each chip and into adjacent chips. Upon stacking the chips in a three dimensional structure, precise alignment is obtained for interconnect pads which are disposed on the edges of each integrated circuit chip. Dense bus and I/O networks can be thereby supported on a face of the resultant three-dimensional structure.

Abstract: A cube package of stacked silicon semiconductor chips. To accommodate cube packaging, a metal transfer layer is added over the passivated chip face to bring all of the surface electrical contacts to a common chip edge. The metal transfer layer is insulated from the chip face and from the adjacent chip in the stack by polymer layers having a low dielectric constant, and a thermal expansion coefficient matching that of the stacked chips. An adhesive polymer layer is added to strengthen the bond between the first polymer layers and the adjacent chip in the stack, by deposition of the adhesive layer and partial cure at the wafer level, and then full cure when the chips are stacked together to form the cube.

Abstract: A method of fabricating a high density electronic package is disclosed. The package includes a module of laminated semiconductor chips, including spare chip(s) and a supporting substrate with a fixed interconnect pattern. Chip connection pads are provided at a first pad level of the module; one or more pads corresponding to each chip in the module. The module is tested at the first pad level to identify defective chip(s). A spare routing pattern is applied to the module for electrically isolating defective chip(s) and effectively substituting spare chip(s) therefor such that a predetermined pattern of metal interconnect landings on an access surface of the module remains unchanged, as does the supporting substrate.

Abstract: In a memory system, which includes a dynamic random access memory (DRAM) that has to be precharged before the contents thereof can be selectively read out into a static register, there is provided means for reading the memory contents of the memory cells of a part or the whole of a row of memory cells of the DRAM into the static register while concurrently precharging the DRAM for a subsequent read-out command. This reduces the overall cycle time of the memory array since read-out of the static register can occur during precharge.

Abstract: A semiconductor integrated chip (IC) package has a lead frame for wire bonding IC chips contained therein. The lead frame power buses are arranged to minimize power bus inductance by assuring that a minimum distance is maintained between a current source path and a current return path which includes the wire bond connections to the chip. Distance is minimized by providing both the current source and current return pins in adjacent pin pairs on opposite sides of the package.

Abstract: A wire is positioned in intimate contact with a microcircuit chip above a conductor line or pad on the chip. The line is protected by a layer of passivating or insulating material deposited upon the chip. A short pulse, focussed, energy source such as a laser beam drills a hole through or on the edge of the wire, and also opens a hole drawn through the insulating material to expose the conductor line. Then energy is directed upon the portion of the wire surrounding the hole to melt metal from the wire down into the hole which coalesces with molten metal below to form an electrical and mechanical bond of the wire to the line.

Abstract: Disclosed is a test site for an integrated circuit chip including a CCD register. Two serial CCD registers are spaced from each other at incrementally variable intervals. The first register receives a serial bit stream having a first binary value while the second serial register receives a bit stream having a second binary value. Data is transferred in parallel from the second register to determine the point at which the spacing between the two registers is sufficiently close to permit undesirable cross-talk.