Abstract: A method of forming a plurality of integrated circuit die on a semiconductor wafer (30). The method forms a first integrated circuit die (32a) in a first area in a fixed position relative to the semiconductor wafer, by forming at least two devices (42a) in the first area, the at least two devices selected from a group of active and passive devices, and by forming a first metal layer (62) comprising portions connecting to the at least two devices in the first area. The method also forms a second integrated circuit die (32b) in a second area in a fixed position relative to the semiconductor wafer, the second area separated from the first area by a scribe area (34). The formation of the second integrated circuit die comprises the steps of forming at least two devices (42b) in the second area, the at least two devices selected from a group of active and passive devices, and forming the first metal layer to further comprise portions connecting to the at least two devices in the second area.

Abstract: A method of forming a plurality of integrated circuit die on a semiconductor wafer (30). The method forms a first integrated circuit die (32a) in a first area in a fixed position relative to the semiconductor wafer, by forming at least two devices (42a) in the first area, the at least two devices selected from a group of active and passive devices, and by forming a first metal layer (62) comprising portions connecting to the at least two devices in the first area. The method also forms a second integrated circuit die (32b) in a second area in a fixed position relative to the semiconductor wafer, the second area separated from the first area by a scribe area (34). The formation of the second integrated circuit die comprises the steps of forming at least two devices (42b) in the second area, the at least two devices selected from a group of active and passive devices, and forming the first metal layer to further comprise portions connecting to the at least two devices in the second area.

Abstract: A method for testing an integrated circuit using a tester. The tester has internal periods for timing reference. The integrated circuit has one or more input ports, one or more output ports and a logic circuit disposed between the input ports and the output ports. The tester applies an input signal to one or more of the input ports, the input signal being synchronous to the internal periods of the tester, such that, by the operation of the logic circuit, an output signal appears at one or more of the output ports. The method comprises the following steps. First, a first output port is selected having a predetermined signal event that occurs at the first output port during a predetermined time range, the predetermined time range being determined with respect to the internal period. Then, the predetermined signal event is used as a timing reference for a test event of the integrated circuit, the test event occurring a predetermined time interval from the predetermined event.