Abstract: A reproduction apparatus has an endless web with perforations or other indicia triggering image formation and receiving sheet presentation. To correct for error in perforation location the distance between perforations is measured and a delay after sensing one or both perforations is adjusted accordingly. Preferably, the distance between perforations is measured by an encoder temporarily connected to the apparatus when a new web is installed by a serviceperson.

Abstract: An improved semiconductor die bonding structure and method for electrical devices is described which utilizes a ductile foil between the semiconductor die and the base of the device package. The die is sealed to the foil with a die bonding material formed from a titania free base glass to which has been added 23.6 to 36.4 weight percent lead titanate powder to give a glass plus ceramic mixture consisting essentially of (by weight percent) 2.5-10.7% GeO.sub.2, 0-2.3% SiO.sub.2, 58.6-78.5% PbO, 0-5.3% PbF.sub.2, 7-13% B.sub.2 O.sub.3, 2.5-6.9% Al.sub.2 O.sub.3, 0-5.3% ZnO, 0.4-2.3% V.sub.2 O.sub.5, 0-5.3% CdO, and 6.2-9.6% TiO.sub.2. The ductile foil is bonded to the ceramic package base directly without intermediate layers or alternatively by means of an improved foil bonding glass material consisting essentially of (by weight percent) 10-15% SiO.sub.2, 45-55% PbO, 8-12% ZnO, 2-5% Al.sub.2 O.sub.3, and 25-30% B.sub.2 O.sub.3.

Abstract: A coplanar die to substrate bond method wherein a plurality of die are aligned on a silicon wafer substrate in a predetermined relationship and a slurry of glass is applied to bond them together. This occurs while either on a flat or a grooved plate. When the silicon wafer substrate and the plurality of die are ready for firing, they are placed on a grooved plate so that grooves are below the glass thereby decreasing the capillary force which commonly causes overflow. With reduced overflow, the bonding can be done at a higher temperature to reduce underflow. Because there is no underflow or overflow using this process, a greater degree of coplanarity is achieved thereby making future processing steps, such as the processing of interconnect lines, much easier to perform.

Abstract: An improved semiconductor die bonding structure and method for electrical devices is described which utilizes a ductile foil between the semiconductor die and the base of the device package. The die is sealed to the foil with a die bonding material formed from a titania free base glass to which has been added 23.6 to 36.4 weight percent lead titanate powder to give a glass plus ceramic mixture consisting essentially of (by weight percent) 2.5-10.7% GeO.sub.2, 0-2.3% SiO.sub.2, 58.6-78.5% PbO, 0-5.3% PbF.sub.2, 7-13% B.sub.2 O.sub.3, 2.5-6.9% Al.sub.2 O.sub.3, 0-5.3% ZnO, 0.4-2.3% V.sub.2 O.sub.5, 0-5.3% CdO, and 6.2-9.6% TiO.sub.2. The ductile foil is bonded to the ceramic package base directly without intermediate layers or alternatively by means of an improved foil bonding glass material consisting essentially of (by weight percent) 10-15% SiO.sub.2, 45-55% PbO, 8-12% ZnO, 2-5% Al.sub.2 O.sub.3, and 25-30% B.sub.2 O.sub.3.

Abstract: An improved semiconductor die bonding structure and method for electrical devices is described which utilizes a ductile foil between the semiconductor die and the base of the device package. The die is sealed to the foil with a die bonding material formed from a titania free base glass to which has been added 23.6 to 36.4 weight percent lead titanate powder to give a glass plus ceramic mixture consisting essentially of (by weight percent) 2.5-10.7% GeO.sub.2, 0-2.3% SiO.sub.2, 58.6-78.5% PbO, 0-5.3% PbF.sub.2, 7-13% B.sub.2 O.sub.3, 2.5-6.9% Al.sub.2 O.sub.3, 0-5.3% ZnO, 0.4-2.3% V.sub.2 O.sub.5, 0-5.3% CdO, and 6.2-9.6% TiO.sub.2. The ductile foil is bonded to the ceramic package base directly without intermediate layers or alternatively by means of an improved foil bonding glass material consisting essentially of (by weight percent) 10-15% SiO.sub.2, 45-55% PbO, 8-12% ZnO, 2-5% Al.sub.2 O.sub.3, and 25-30% B.sub.2 O.sub.3.