Abstract: Methods and systems for determining allele status at a plurality of loci. A first plurality of loci are amplified, in a single reaction vessel, with a plurality of fluorescently labeled detection reagents. A first detection reagent that is specific for the most prevalent allele in a population is labeled with a first fluorescent moiety. A second detection reagent that is specific for a minor allele in the population is labeled with a second fluorescent moiety that is distinguishable from the first fluorescent moiety. A fluorescent signal corresponding to the first fluorescent moiety and the second fluorescent moiety in the reaction vessel is detected. When the contribution of the second fluorescent moiety does not satisfy a threshold, report that the subject does not carry the second allele at any of the first plurality of genomic loci. When the contribution of the second fluorescent satisfies the threshold, perform secondary allele detection assays.

Abstract: A method of generating a report presenting subject-specific information relevant to a treatment of a neuropsychiatric disorder includes obtaining a set of genetic test results. The set of genetic test results includes allelic information for each gene in a set of genomic loci. The method includes obtaining a set of medications including a first medication and obtaining a first patient-specific evaluation associated with the first medication using the set of genetic test results. The method includes determining a set of alternative medications to the first medication and determining, for each respective alternative medication of the set of alternative medications, a corresponding alternative pharmacokinetic and pharmacodynamic patient-specific evaluation using the set of genetic test results.

Abstract: The present invention relates to the constitutive activity of the Hedgehog pathway in non-small cell lung carcinoma (NSCLC). A method for diagnosing NSCLC by detecting the level of a component of the Hedgehog pathway is provided, as is a method for identifying subjects that will respond positively to treatment with a Hedgehog pathway antagonist. Methods for treating subjects with cancer or cancers resistant to Hedgehog pathway antagonists are also provided.

Abstract: The present invention relates to the constitutive activity of the Hedgehog pathway in non-small cell lung carcinoma (NSCLC). A method for diagnosing NSCLC by detecting the level of a component of the Hedgehog pathway is provided, as is a method for identifying subjects that will respond positively to treatment with a Hedgehog pathway antagonist. Methods for treating subjects with cancer or cancers resistant to Hedgehog pathway antagonists are also provided.

Abstract: A photodetector circuit incorporates an avalanche photodiode structure having a contact layer (14) forming an ohmic contact over an annular region (18) with the annular guard ring (8). In the fabrication process, the starting substrate can either be the handle wafer of a p? silicon-on-insulator wafer, or a p-Si substrate with an insulating SiO2 layer (4). A window (6) is produced in the insulating layer (4) by conventional photolithographic and etching. A n+ guard ring (8) is created by diffusing donor impurities into the substrate, and a thinner insulating SiO2 layer (22) is thermally grown so as to cover the exposed surface of the substrate within the window (6). P-type dopant is then implanted through the thin oxide layer to increase the doping level near the surface of the substrate. Subsequently a second window (24) is made in the insulating layer (22), and the layer (12) is then epitaxially grown selectively on the area of the substrate exposed by the window (24) in the insulating layer (22).

Abstract: A horizontal access semiconductor photo detector (2) comprises a horizontal light absorbing layer (8) for converting light into photo-current which layer is configured to confine light within it in whispering gallery modes of propagation. The detector is configured to have a first waveguide portion (18) and a second light confining portion (20, 21) arranged such that the waveguide portion couples light into the detector and transfers light into the light confining portion so as to excite whispering gallery modes of propagation around the light confining portion. The light absorbing layer may be part of the light confining portion or alternatively light can be coupled into the light confining portion or alternatively light can be coupled into the light absorbing layer from the light confining portion by evanescent coupling. The excitation of whispering gallery modes within the light absorbing layer significantly increases the effective absorption coefficient of the light absorbing layer.

Abstract: A photodetector circuit incorporates an avalanche photodiode (APD) 300 produced by epitaxy on a CMOS substrate 302 with implanted n-well 304 and p-well 306. The n-well 304 has an implanted p+ guard ring 310 delimiting the APD 300. Within the guard ring 310 is an implanted n+ APD layer 312 upon which is deposited an epitaxial p+ APD layer 314, these layers forming the APD 300. The APD may be incorporated in an amplifier circuit 50 providing feedback to maintain constant bias voltage, and may include an SiGe absorption region to provide extended long wavelength response or lower avalanche voltage. Non-avalanche photodiodes may also be used.

Abstract: Layer processing to grow a layer structure upon a substrate surface comprises supplying a vapor mixture stream to the substrate (28) to deposit constituents, monitoring growth with an ellipsometer (12) and using its output in real-time growth control of successive pseudo-layers. A Bayesian algorithm is used to predict a probability density function for pseudo-layer growth parameters from initial surface composition, growth conditions and associated growth probabilities therewith, the function comprising discrete samples. Weights are assigned to the samples representing occurrence likelihoods based on most recent sensor output. A subset of the samples is chosen with selection likelihood weighted in favor of samples with greater weights. The subset provides a subsequent predicted probability density function and associated pseudo-layer growth parameters for growth control, and becomes a predicted probability density function for a further iteration of pseudo-layer growth.

Abstract: Isolated native forms of soluble, freely diffusible Sonic hedgehog protein and recombinant forms of soluble, freely diffusible oligomeric Sonic hedgehog protein are produced. Methods of assaying an oligomeric Sonic hedgehog protein derived from a tissue and/or cell comprise measuring a conditioned media to detect the production of the soluble, freely diffusible Sonic hedgehog protein.

Abstract: A structure which exhibits magnetic properties when it receives electromagnetic radiation is formed from an array of capacitive elements each of which is smaller, and preferably much smaller, than the wavelength of the radiation. Each capacitive element has a low resistance conducting path associated with it and is such that a magnetic component of the received electromagnetic radiation induces an electrical current to flow around the path and through the associated element. The creation of internal magnetic fields generated by the flow of the induced electrical current gives rise to the structure's magnetic properties.

Abstract: The performance of a microwave antenna is improved by incorporating a fine wire dielectric material which has a dielectric constant ∈ of less than unity at microwave frequencies. The effect of the dielectric material is to refract microwaves so that the antenna appears to have a larger aperture than that of its physical size. Furthermore, by selecting the transmission cut off frequency of the dielectric material, two antenna elements which are intended to operate within different frequency bands can be mounted one behind the other.

Abstract: A photodetector circuit incorporates an avalanche photodiode (APD) 300 produced by epitaxy on a CMOS substrate 302 with implanted n-well 304 and p-well 306. The n-well 304 has an implanted p+ guard ring 310 delimiting the APD 300. Within the guard ring 310 is an implanted n+ APD layer 312 upon which is deposited an epitaxial p+ APD layer 314, these layers forming the APD 300. The APD may be incorporated in an amplifier circuit 50 providing feedback to maintain constant bias voltage, and may include an SiGe absorption region to provide extended long wavelength response or lower avalanche voltage. Non-avalanche photodiodes may also be used.

Abstract: A semiconductor substrate, suitable for epitaxial growth thereon, comprising a plurality of layers of material. The interfaces between layers act as reflectors of electromagnetic radiation. The reflectors may be used in, for example, resonant cavities in which may be located, for example, multi-quantum well detectors, the efficiency of said detectors being increased by virtue of the enhanced electric field associated with resonance in the cavity.

Abstract: An electroluminescent silicon device comprises a light emitting diode (10). The diode (10) includes a p.sup.+ semiconductor contact (42) and a n.sup.- layer (32), forming a p-n junction (43) therebetween. The n.sup.- layer (32) is carbon-doped and irradiated with an electron beam having electrons with energies of between 150 and 400 keV to form G-centres. The diode (10) is electroluminescent when forward biassed, radiative recombination occuring at the G-centres. The invention reconciles the conflicting requirements of creating luminescent defect centres by irradiation while avoiding damage to electronic properties. The device may be an integrated light emitting diode (200) incorporated in a CMOS microcircuit. Photon output from the diode (200) may be relayed to other parts of a CMOS microcircuit by an integrated waveguide (224).

Abstract: A method of monitoring surface layer growth using light scattered off a surface illuminated e.g. by a laser. A small area of a surface of a substrate is illuminated and the light scattered in a non-specular direction is detected during cleaning and subsequent layer growth. The amount of light scattered varies strongly with surface characteristics and gives clear indication of the end of oxide removal, initiation of nucleation and quality of growing layers. The monitoring is used during e.g. chemical vapor deposition, or e.g. molecular beam epitaxy growth processes.

Abstract: Pentaphosphates of the formula XP.sub.5 O.sub.14, wherein X is a rare earth metal, respond to incident ionizing radiation by emitting secondary electromagnetic radiation which may be visible or may be made visible by doping with other rare earth metal pentaphosphates or mixtures of Mn and Sb ions. The pentaphosphates of Ce and Pr respond quickly to cessation of incident radiation so that they are used to advantage in scintillators.