Patents by Inventor David Jacy

David Jacy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and structure for fabricating bonded substrate structures using thermal processing to remove oxygen species
    Patent number: 7598153
    Abstract: A method for fabricating bonded substrate structures, e.g., silicon on silicon. In a specific embodiment, the method includes providing a thickness of single crystal silicon material transferred from a first silicon substrate coupled to a second silicon substrate. In a specific embodiment, the second silicon substrate has a second surface region that is joined to a first surface region from the thickness of single crystal silicon material to form of an interface region having a first characteristic including a silicon oxide material between the thickness of single crystal silicon material and the second silicon substrate. The method includes subjecting the interface region to a thermal process to cause a change to the interface region from the first characteristic to a second characteristic.
    Type: Grant
    Filed: March 31, 2006
    Date of Patent: October 6, 2009
    Assignee: Silicon Genesis Corporation
    Inventors: Francois J. Henley, James Andrew Sullivan, Sien Giok Kang, Philip James Ong, Harry Robert Kirk, David Jacy, Igor Malik
  • Method and structure for fabricating bonded substrate structures using thermal processing to remove oxygen species
    Publication number: 20070232022
    Abstract: A method for fabricating bonded substrate structures, e.g., silicon on silicon. In a specific embodiment, the method includes providing a thickness of single crystal silicon material transferred from a first silicon substrate coupled to a second silicon substrate. In a specific embodiment, the second silicon substrate has a second surface region that is joined to a first surface region from the thickness of single crystal silicon material to form of an interface region having a first characteristic including a silicon oxide material between the thickness of single crystal silicon material and the second silicon substrate. The method includes subjecting the interface region to a thermal process to cause a change to the interface region from the first characteristic to a second characteristic.
    Type: Application
    Filed: March 31, 2006
    Publication date: October 4, 2007
    Applicant: Silicon Genesis Corporation
    Inventors: Francois Henley, James Sullivan, Sien Kang, Philip Ong, Harry Kirk, David Jacy, Igor Malik