Abstract: A process for semiconductor device fabrication in which a Czochralski silicon substrate is implanted with boron is disclosed. The boron is implanted using an energy of about 500 keV to about 3 MeV and a dose of about 3.times.10.sup.13 /cm.sup.2 to about 3.times.10.sup.14 /cm.sup.2. In order to reduce the threading dislocation density in the substrate to less than about 10.sup.3 /cm.sup.2 at a depth in the substrate of at least about 0.5 .mu.m, after the implant, the substrate is annealed in a two-step process. First the substrate is annealed at a temperature in the range of about 725.degree. C. to about 775.degree. C. followed by an anneal at a temperature of at least about 900.degree. C. The duration of the first step is selected to provide a dislocation density of less than about 10.sup.3 /cm.sup.2 at the desired depth in the substrate.

Abstract: Diffusion of ion-implanted dopant is controlled by incorporating electrically inactive impurity in a semiconductor layer by at least one crystal growth technique.

Abstract: Diffusion of ion-implanted dopant is controlled by incorporating electrically inactive impurity in a semiconductor layer by at least one crystal growth technique.