Abstract: Electronic substrates, contact pads for electronic substrates, and related methods are disclosed. Electronic substrates may include an electrically conductive layer that forms at least one contact pad and at least one metal trace on a non-conductive layer. The contact pads are arranged with greater thicknesses or heights above the non-conductive layer than the metal traces. Dielectric layers are disclosed that cover the metal traces while leaving top surfaces of the contact pads exposed. Top surfaces of the dielectric layers may be arranged to be coplanar with top surfaces of the contact pads to provide electronic substrates having generally planar top faces. Bottom faces of electronic substrates may include mounting pads that are coplanar with additional dielectric layers. Methods are disclosed that include forming dielectric layers to cover contact pads and metal traces, and removing surface portions of the dielectric layers until the contact pads are accessible through the dielectric layers.

Abstract: Electronic substrates, contact pads for electronic substrates, and related methods are disclosed. Electronic substrates may include an electrically conductive layer that forms at least one contact pad and at least one metal trace on a non-conductive layer. The contact pads are arranged with greater thicknesses or heights above the non-conductive layer than the metal traces. Dielectric layers are disclosed that cover the metal traces while leaving top surfaces of the contact pads exposed. Top surfaces of the dielectric layers may be arranged to be coplanar with top surfaces of the contact pads to provide electronic substrates having generally planar top faces. Bottom faces of electronic substrates may include mounting pads that are coplanar with additional dielectric layers. Methods are disclosed that include forming dielectric layers to cover contact pads and metal traces, and removing surface portions of the dielectric layers until the contact pads are accessible through the dielectric layers.

Abstract: Electronic substrates, contact pads for electronic substrates, and related methods are disclosed. Electronic substrates may include an electrically conductive layer that forms at least one contact pad and at least one metal trace on a non-conductive layer. The contact pads are arranged with greater thicknesses or heights above the non-conductive layer than the metal traces. Dielectric layers are disclosed that cover the metal traces while leaving top surfaces of the contact pads exposed. Top surfaces of the dielectric layers may be arranged to be coplanar with top surfaces of the contact pads to provide electronic substrates having generally planar top faces. Bottom faces of electronic substrates may include mounting pads that are coplanar with additional dielectric layers. Methods are disclosed that include forming dielectric layers to cover contact pads and metal traces, and removing surface portions of the dielectric layers until the contact pads are accessible through the dielectric layers.

Abstract: Electronic substrates, contact pads for electronic substrates, and related methods are disclosed. Electronic substrates may include an electrically conductive layer that forms at least one contact pad and at least one metal trace on a non-conductive layer. The contact pads are arranged with greater thicknesses or heights above the non-conductive layer than the metal traces. Dielectric layers are disclosed that cover the metal traces while leaving top surfaces of the contact pads exposed. Top surfaces of the dielectric layers may be arranged to be coplanar with top surfaces of the contact pads to provide electronic substrates having generally planar top faces. Bottom faces of electronic substrates may include mounting pads that are coplanar with additional dielectric layers. Methods are disclosed that include forming dielectric layers to cover contact pads and metal traces, and removing surface portions of the dielectric layers until the contact pads are accessible through the dielectric layers.

Abstract: The present disclosure relates to a shielded double-sided module, which includes a module substrate with a ground plane, at least one top electronic component attached to a top surface of the module substrate and encapsulated by a first mold compound, a number of first module contacts attached to a bottom surface of the module substrate, a second mold compound, and a shielding structure. The second mold compound resides over the bottom surface of the module substrate, and each first module contact is exposed through the second mold compound. The shielding structure completely covers a top surface and a side surface of the module, and is electrically coupled to the ground plane within the module substrate.

Abstract: The present disclosure relates to a wafer-level package that includes a first thinned die having a first device layer, a multilayer redistribution structure, a first mold compound, and a second mold compound. The multilayer redistribution structure includes redistribution interconnects that connect the first device layer to package contacts on a bottom surface of the multilayer redistribution structure. Herein, the connections between the redistribution interconnects and the first device layer are solder-free. The first mold compound resides over the multilayer redistribution structure and around the first thinned die, and extends beyond a top surface of the first thinned die to define an opening within the first mold compound and over the first thinned die. The second mold compound fills the opening and is in contact with the top surface of the first thinned die.

Abstract: The present disclosure relates to a shielded double-sided module, which includes a module substrate with a ground plane, at least one top electronic component attached to a top surface of the module substrate and encapsulated by a first mold compound, a number of first module contacts attached to a bottom surface of the module substrate, a second mold compound, and a shielding structure. The second mold compound resides over the bottom surface of the module substrate, and each first module contact is exposed through the second mold compound. The shielding structure completely covers a top surface and a side surface of the module, and is electrically coupled to the ground plane within the module substrate.

Abstract: The present disclosure relates to a wafer-level package that includes a first thinned die having a first device layer, a multilayer redistribution structure, a first mold compound, and a second mold compound. The multilayer redistribution structure includes redistribution interconnects that connect the first device layer to package contacts on a bottom surface of the multilayer redistribution structure. Herein, the connections between the redistribution interconnects and the first device layer are solder-free. The first mold compound resides over the multilayer redistribution structure and around the first thinned die, and extends beyond a top surface of the first thinned die to define an opening within the first mold compound and over the first thinned die. The second mold compound fills the opening and is in contact with the top surface of the first thinned die.

Abstract: The present disclosure relates to a wafer-level package that includes a first thinned die having a first device layer, a multilayer redistribution structure, a first mold compound, and a second mold compound. The multilayer redistribution structure includes redistribution interconnects that connect the first device layer to package contacts on a bottom surface of the multilayer redistribution structure. Herein, the connections between the redistribution interconnects and the first device layer are solder-free. The first mold compound resides over the multilayer redistribution structure and around the first thinned die, and extends beyond a top surface of the first thinned die to define an opening within the first mold compound and over the first thinned die. The second mold compound fills the opening and is in contact with the top surface of the first thinned die.

Abstract: The present disclosure relates to a wafer-level package that includes a first thinned die having a first device layer, a multilayer redistribution structure, a first mold compound, and a second mold compound. The multilayer redistribution structure includes redistribution interconnects that connect the first device layer to package contacts on a bottom surface of the multilayer redistribution structure. Herein, the connections between the redistribution interconnects and the first device layer are solder-free. The first mold compound resides over the multilayer redistribution structure and around the first thinned die, and extends beyond a top surface of the first thinned die to define an opening within the first mold compound and over the first thinned die. The second mold compound fills the opening and is in contact with the top surface of the first thinned die.

Abstract: The present disclosure relates to a wafer-level package that includes a first thinned die having a first device layer, a multilayer redistribution structure, a first mold compound, and a second mold compound. The multilayer redistribution structure includes redistribution interconnects that connect the first device layer to package contacts on a bottom surface of the multilayer redistribution structure. Herein, the connections between the redistribution interconnects and the first device layer are solder-free. The first mold compound resides over the multilayer redistribution structure and around the first thinned die, and extends beyond a top surface of the first thinned die to define an opening within the first mold compound and over the first thinned die. The second mold compound fills the opening and is in contact with the top surface of the first thinned die.

Abstract: The present disclosure relates to a wafer-level package that includes a first thinned die having a first device layer, a multilayer redistribution structure, a first mold compound, and a second mold compound. The multilayer redistribution structure includes redistribution interconnects that connect the first device layer to package contacts on a bottom surface of the multilayer redistribution structure. Herein, the connections between the redistribution interconnects and the first device layer are solder-free. The first mold compound resides over the multilayer redistribution structure and around the first thinned die, and extends beyond a top surface of the first thinned die to define an opening within the first mold compound and over the first thinned die. The second mold compound fills the opening and is in contact with the top surface of the first thinned die.

Abstract: The present disclosure relates to a shielded double-sided module, which includes a module substrate with a ground plane, at least one top electronic component attached to a top surface of the module substrate and encapsulated by a first mold compound, a number of first module contacts attached to a bottom surface of the module substrate, a second mold compound, and a shielding structure. The second mold compound resides over the bottom surface of the module substrate, and each first module contact is exposed through the second mold compound. The shielding structure completely covers a top surface and a side surface of the module, and is electrically coupled to the ground plane within the module substrate.

Abstract: A first plate-able layer is selectively plated to form one or more redistribution paths. The connection points of an IC package are connected to the redistribution paths, and the IC package is over molded for stability. The first plate-able layer is then removed, leaving the one or more redistribution paths exposed. The redistribution paths allow one or more contact points of the IC package to be moved to a new location in order to facilitate integration of the IC package into a system. By plating the redistribution paths up from the first plate-able layer, fine geometries for repositioning the contact points of the IC package with minimal conductor thickness are achieved without the need for specialized manufacturing equipment. Accordingly, a redistribution layer is formed at a low cost while minimizing the impact of the layer on the operation of the IC device.

Abstract: The present disclosure relates to enhancing the thermal performance of encapsulated flip chip dies. According to an exemplary process, a plurality of flip chip dies are attached on a top surface of a carrier, and a first mold compound is applied over the top surface of the carrier to encapsulate the plurality of flip chip dies. The first mold compound is thinned down to expose a substrate of each flip chip die and the substrate of each flip chip die is then substantially etched away to provide an etched flip chip die that has an exposed surface at the bottom of a cavity. Next, a second mold compound with high thermal conductivity is applied to substantially fill each cavity and the top surface of the second mold compound is planarized. Finally, the encapsulated etched flip chip dies can be marked, singulated, and tested as a module.

Abstract: The present disclosure relates to enhancing the thermal performance of encapsulated flip chip dies. According to an exemplary process, a plurality of flip chip dies are attached on a top surface of a carrier, and a first mold compound is applied over the top surface of the carrier to encapsulate the plurality of flip chip dies. The first mold compound is thinned down to expose a substrate of each flip chip die and the substrate of each flip chip die is then substantially etched away to provide an etched flip chip die that has an exposed surface at the bottom of a cavity. Next, a second mold compound with high thermal conductivity is applied to substantially fill each cavity and the top surface of the second mold compound is planarized. Finally, the encapsulated etched flip chip dies can be marked, singulated, and tested as a module.

Abstract: A flip chip module having at least one flip chip die is disclosed. The flip chip module includes a carrier having a top surface with a first mold compound residing on the top surface. A first mold compound is disposed on the top surface of the carrier. A first thinned flip chip die resides over a first portion of the first mold compound with interconnects extending through the first portion to the top surface wherein the first portion of the mold compound fills a region between the first flip chip die and the top surface. A second mold compound resides over the substrate and provides a first recess over the first flip chip die wherein the first recess extends to a first die surface of the first flip chip die. A third mold compound resides in the first recess and covers an exposed surface of the flip chip die.

Abstract: The present disclosure relates to enhancing the thermal performance of encapsulated flip chip dies. According to an exemplary process, a plurality of flip chip dies are attached on a top surface of a carrier, and a first mold compound is applied over the top surface of the carrier to encapsulate the plurality of flip chip dies. The first mold compound is thinned down to expose a substrate of each flip chip die and the substrate of each flip chip die is then substantially etched away to provide an etched flip chip die that has an exposed surface at the bottom of a cavity. Next, a second mold compound with high thermal conductivity is applied to substantially fill each cavity and the top surface of the second mold compound is planarized. Finally, the encapsulated etched flip chip dies can be marked, singulated, and tested as a module.

Abstract: The present disclosure relates to enhancing the thermal performance of encapsulated flip chip dies. According to an exemplary process, a plurality of flip chip dies are attached on a top surface of a carrier, and a first mold compound is applied over the top surface of the carrier to encapsulate the plurality of flip chip dies. The first mold compound is thinned down to expose a substrate of each flip chip die and the substrate of each flip chip die is then substantially etched away to provide an etched flip chip die that has an exposed surface at the bottom of a cavity. Next, a second mold compound with high thermal conductivity is applied to substantially fill each cavity and the top surface of the second mold compound is planarized. Finally, the encapsulated etched flip chip dies can be marked, singulated, and tested as a module.

Abstract: A flip chip module having at least one flip chip die is disclosed. The flip chip module includes a carrier having a top surface with a first mold compound residing on the top surface. A first mold compound is disposed on the top surface of the carrier. A first thinned flip chip die resides over a first portion of the first mold compound with interconnects extending through the first portion to the top surface wherein the first portion of the mold compound fills a region between the first flip chip die and the top surface. A second mold compound resides over the substrate and provides a first recess over the first flip chip die wherein the first recess extends to a first die surface of the first flip chip die. A third mold compound resides in the first recess and covers an exposed surface of the flip chip die.